Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS2 field-effect transistors

Helium ion irradiation is a known method of tuning the electrical conductivity and charge carrier mobility of novel two-dimensional semiconductors. Here, we report a systematic study of the electrical performance of chemically synthesized monolayer molybdenum disulfide (MoS2) field-effect transistors irradiated with a focused helium ion beam as a function of increasing areal irradiation coverage. We determine an optimal coverage range of approx. 10%, which allows for the improvement of both the carrier mobility in the transistor channel and the electrical conductance of the MoS2, due to doping with ion beam-created sulfur vacancies. Larger areal irradiations introduce a higher concentration of scattering centers, hampering the electrical performance of the device. In addition, we find that irradiating the electrode–channel interface has a deleterious impact on charge transport when contrasted with irradiations confined only to the transistor channel.

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Orientation analysis of pentacene molecules in organic field-effect transistor devices using polarization-dependent Raman spectroscopy

Scientific Reports ◽

10.1038/s41598-019-51647-2 ◽

2019 ◽

Vol 9 (1) ◽

Cited By ~ 3

Author(s):

Bishwajeet Singh Bhardwaj ◽

Takeshi Sugiyama ◽

Naoko Namba ◽

Takayuki Umakoshi ◽

Takafumi Uemura ◽

...

Keyword(s):

Raman Spectroscopy ◽

Charge Carrier ◽

Molecular Orientation ◽

Field Effect ◽

High Performance ◽

Carrier Mobility ◽

Field Effect Transistors ◽

Charge Carrier Mobility ◽

Orientation Distribution ◽

High Resolution Technique

Abstract Pentacene, an organic molecule, is a promising material for high-performance field effect transistors due to its high charge carrier mobility in comparison to usual semiconductors. However, the charge carrier mobility is strongly dependent on the molecular orientation of pentacene in the active layer of the device, which is hard to investigate using standard techniques in a real device. Raman scattering, on the other hand, is a high-resolution technique that is sensitive to the molecular orientation. In this work, we investigated the orientation distribution of pentacene molecules in actual transistor devices by polarization-dependent Raman spectroscopy and correlated these results with the performance of the device. This study can be utilized to understand the distribution of molecular orientation of pentacene in various electronic devices and thus would help in further improving their performances.

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Isoindigo-based polymer field-effect transistors: effects of selenophene-substitution on high charge carrier mobility

Chemical Communications ◽

10.1039/c5cc02104a ◽

2015 ◽

Vol 51 (38) ◽

pp. 8120-8122 ◽

Cited By ~ 32

Author(s):

Kwang Hun Park ◽

Kwang Hee Cheon ◽

Yun-Ji Lee ◽

Dae Sung Chung ◽

Soon-Ki Kwon ◽

...

Keyword(s):

Charge Carrier ◽

Field Effect ◽

Carrier Mobility ◽

Field Effect Transistors ◽

Charge Carrier Mobility ◽

High Charge ◽

Crystalline Order ◽

High Charge Carrier Mobility

The selenophene-substitution can lead to a higher crystalline order as well as a high charge carrier mobility in isoindigo-based polymers.

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Influence of the semiconductor thickness on the charge carrier mobility in P3HT organic field-effect transistors in top-gate architecture on flexible substrates

Organic Electronics ◽

10.1016/j.orgel.2010.01.023 ◽

2010 ◽

Vol 11 (5) ◽

pp. 814-819 ◽

Cited By ~ 59

Author(s):

Benedikt Gburek ◽

Veit Wagner

Keyword(s):

Charge Carrier ◽

Field Effect ◽

Carrier Mobility ◽

Field Effect Transistors ◽

Charge Carrier Mobility ◽

Flexible Substrates ◽

Organic Field Effect Transistors

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Dianthraceno[a,e]pentalenes: synthesis, crystallographic structures and applications in organic field-effect transistors

Chemical Communications ◽

10.1039/c4cc07630c ◽

2015 ◽

Vol 51 (3) ◽

pp. 503-506 ◽

Cited By ~ 45

Author(s):

Gaole Dai ◽

Jingjing Chang ◽

Wenhua Zhang ◽

Shiqiang Bai ◽

Kuo-Wei Huang ◽

...

Keyword(s):

Charge Carrier ◽

Field Effect ◽

Carrier Mobility ◽

Field Effect Transistors ◽

Charge Carrier Mobility ◽

Dense Packing ◽

Organic Field Effect Transistors ◽

High Charge ◽

Crystallographic Structures ◽

High Charge Carrier Mobility

Two stable dianthraceno[a,e]pentalenes were synthesized and DAP2 exhibited a high charge carrier mobility of 0.65 cm2 V−1 s−1 due to its dense packing.

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Effect of Film Morphology on Charge Transport in C60-based Organic Field Effect Transistors

MRS Proceedings ◽

10.1557/proc-1270-ii06-68 ◽

2010 ◽

Vol 1270 ◽

Cited By ~ 2

Author(s):

Mujeeb Ullah ◽

Andrey K. Kadashchuk ◽

Philipp Stadler ◽

Alexander Kharchenko ◽

Almantas Pivrikas ◽

...

Keyword(s):

Grain Size ◽

Charge Carrier ◽

Substrate Temperature ◽

Charge Transport ◽

Field Effect ◽

Carrier Mobility ◽

Field Effect Transistors ◽

Charge Carrier Mobility ◽

Film Morphology ◽

Organic Field Effect Transistors

AbstractThe critical factor that limits the efficiencies of organic electronic devices is the low charge carrier mobility which is attributed to disorder in organic films. In this work we study the effects of active film morphology on the charge transport in Organic Field Effect Transistors (OFETs). We fabricated the OFETs using different substrate temperature to grow different morphologies of C60 films by Hot Wall Epitaxy. Atomic Force Microscopy images and XRD results showed increasing grain size with increasing substrate temperature. An increase in field effect mobility was observed for different OFETs with increasing grain size in C60 films. The temperature dependence of charge carrier mobility in these devices followed the empirical relation named as Meyer-Neldel Rule and showed different activation energies for films with different degree of disorder. A shift in characteristic Meyer-Neldel energy was observed with changing C60 morphology which can be considered as an energetic disorder parameter.

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Facile synthesis of picenes incorporating imide moieties at both edges of the molecule and their application to n-channel field-effect transistors

RSC Advances ◽

10.1039/d0ra06629j ◽

2020 ◽

Vol 10 (52) ◽

pp. 31547-31552

Author(s):

Yuxin Guo ◽

Kaito Yoshioka ◽

Shino Hamao ◽

Yoshihiro Kubozono ◽

Fumito Tani ◽

...

Keyword(s):

Thin Film ◽

Charge Carrier ◽

Active Layer ◽

Field Effect ◽

Carrier Mobility ◽

Field Effect Transistors ◽

Charge Carrier Mobility ◽

Facile Synthesis ◽

Maximum Charge

Picenediimide derivatives serve as the active layer of n-channel thin-film field-effect transistors displaying a maximum charge carrier mobility as high as 2.0 × 10−1 cm2 V−1 s−1.

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