Optical Characteristics of Silicon Thin Film in Short-Wave Infrared Band and 1.30 μm Bandpass Optical Filter

2012 ◽  
Vol 32 (10) ◽  
pp. 1031001
Author(s):  
段微波 Duan Weibo ◽  
庄秋慧 Zhuang Qiuhui ◽  
李大琪 Li Daqi ◽  
陈刚 Chen Gang ◽  
余德明 Yu Deming ◽  
...  
Keyword(s):  
Thin Film ◽  
Optical Filter ◽  
Short Wave ◽  
Optical Characteristics ◽  
Silicon Thin Film ◽  
Infrared Band ◽  
Short Wave Infrared

MODIS solar diffuser degradation at short-wave infrared band wavelengths

2017 ◽  
Author(s):  
Amit Angal ◽  
Xiaoxiong J. Xiong ◽  
Xu Geng ◽  
Hongda Chen ◽  
Kevin A. Twedt
Keyword(s):  
Short Wave ◽  
Infrared Band ◽  
Short Wave Infrared

Opto-mechanical assembly and analysis of spectral module in visible-short wave infrared band

2019 ◽  
Vol 40 (2) ◽  
pp. 15-18
Author(s):  
ZHANG Quan ◽  
LI Xin ◽  
ZHAI Wenchao ◽  
LIU Enchao ◽  
ZHANG Yanna ◽  
...  
Keyword(s):  
Short Wave ◽  
Mechanical Assembly ◽  
Infrared Band ◽  
Short Wave Infrared

Apochromatic lens design in the short-wave infrared band using the Buchdahl dispersion model

2019 ◽  
Vol 58 (4) ◽  
pp. 892
Author(s):  
Wei Wang ◽  
Xing Zhong ◽  
Jiang Liu ◽  
Xiaoheng Wang
Keyword(s):  
Dispersion Model ◽  
Short Wave ◽  
Lens Design ◽  
Infrared Band ◽  
Short Wave Infrared

scholarly journals Solid‐State Thin‐Film Broadband Short‐Wave Infrared Light Emitters

2020 ◽  
Vol 32 (45) ◽  
pp. 2003830
Author(s):  
Santanu Pradhan ◽  
Mariona Dalmases ◽  
Gerasimos Konstantatos
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Short Wave ◽  
Infrared Light ◽  
Light Emitters ◽  
Short Wave Infrared

scholarly journals 730-nm optical parametric conversion from near- to short-wave infrared band

2008 ◽  
Vol 16 (8) ◽  
pp. 5435 ◽  
Author(s):  
J. M. Chavez Boggio ◽  
J. R. Windmiller ◽  
M. Knutzen ◽  
R. Jiang ◽  
C. Bres ◽  
...  
Keyword(s):  
Short Wave ◽  
Infrared Band ◽  
Parametric Conversion ◽  
Optical Parametric ◽  
Short Wave Infrared

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

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