Enhancing Luminescent Properties of GaN-Based LED and Improving Optical and Electrical Properties of GaN Epitaxial Wafers with Excimer Laser Irradiation

2015 ◽  
Vol 42 (10) ◽  
pp. 1006004
Author(s):  
谈浩琪 Tan Haoqi ◽  
赵艳 Zhao Yan ◽  
徐晨 Xu Chen ◽  
蒋毅坚 Jiang Yijian
Keyword(s):  
Electrical Properties ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Luminescent Properties ◽  
Optical And Electrical Properties ◽  
Excimer Laser Irradiation

scholarly journals Improving Optical and Electrical Properties of GaN Epitaxial Wafers and Enhancing Luminescent Properties of GaN-Based Light-Emitting-Diode with Excimer Laser Irradiation

Symmetry ◽  
2021 ◽  
Vol 13 (10) ◽  
pp. 1935
Author(s):  
Yijian Jiang ◽  
Haoqi Tan ◽  
Yan Zhao
Keyword(s):  
Electrical Properties ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Laser Energy ◽  
Hole Concentration ◽  
Light Output ◽  
Annealing Treatment ◽  
Optical And Electrical Properties ◽  
Excimer Laser Irradiation ◽  
Krf Excimer Laser

The effect of KrF excimer laser irradiation on the optical and electrical properties of epitaxial wafers with a p-GaN surface were investigated at different laser energy densities and pulse numbers. The laser-irradiated samples were annealed in oxygen. The laser irradiation-induced changes in optical and electrical properties of GaN epitaxial wafers were examined using PL, I–V, XPS, SIMS, and Hall effect measurements. Experimental results show that under an appropriate laser-irradiated condition, optical and electrical properties of the samples were improved to different degrees. The samples which were annealed after laser irradiation have better electrical properties such as the hole concentration and sheet resistance than those without annealing. We hypothesize that the pulsed KrF excimer laser irradiation dissociates the Mg–H complexes and annealing treatment allows the hydrogen to diffuse out more completely under the oxygen atmosphere at a proper temperature, by which the crystalline symmetry of GaN is improved. Under appropriate laser conditions and O2-activated annealing, the light output of the laser-irradiated GaN-based LED sample is about 1.44 times that of a conventional LED at 20 mA. It is found that the wall-plug efficiency is 10% higher at 20 mA and the reverse leakage current is 80% lower at 5 V.

Surface modification of inorganic solid oxides by excimer laser irradiation

1989 ◽  
Author(s):  
Kaoru Igarashi ◽  
Hideaki Saito ◽  
Tomoo Fujioka ◽  
Satoru Fujitsu ◽  
Kunihito Koumoto ◽  
...  
Keyword(s):  
Surface Modification ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Solid Oxides ◽  
Excimer Laser Irradiation

Wavelength Dependence of Excimer Laser Irradiation Effects on Ethylene-Tetrafluoroethylene Copolymer

1994 ◽  
Vol 33 (Part 1, No. 8) ◽  
pp. 4764-4768 ◽  
Author(s):  
Yuji Hamada ◽  
Shunichi Kawanishi ◽  
Masanobu Nishii ◽  
Shun'ichi Sugimoto ◽  
Tadashi Yamamoto
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Wavelength Dependence ◽  
Irradiation Effects ◽  
Excimer Laser Irradiation ◽  
Ethylene Tetrafluoroethylene

Phase Variation of Amorphous-Si and Poly-Si Thin Films with Excimer Laser Irradiation

1996 ◽  
Vol 35 (Part 2, No. 11B) ◽  
pp. L1473-L1475 ◽  
Author(s):  
Kuninori Kitahara ◽  
Katsuyuki Suga ◽  
Akito Hara ◽  
Kazuo Nakajima
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Phase Variation ◽  
Excimer Laser Irradiation ◽  
Amorphous Si

Polycrystalline silicon recrystallized with excimer laser irradiation and impurity doping using ion doping method

1993 ◽  
Vol 73 (7) ◽  
pp. 3271-3275 ◽  
Author(s):  
Yutaka Miyata ◽  
Mamoru Furuta ◽  
Tatsuo Yoshioka ◽  
Tetsuya Kawamura
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Ion Doping ◽  
Impurity Doping ◽  
Excimer Laser Irradiation

Surface Alteration of Amorphous Si3N4 Films by ArF Excimer Laser Irradiation

1995 ◽  
Vol 34 (Part 2, No. 11A) ◽  
pp. L1482-L1485 ◽  
Author(s):  
Kazuo Nakamae ◽  
Kou Kurosawa ◽  
Yasuo Takigawa ◽  
Wataru Sasaki ◽  
Yasukazu Izawa ◽  
...  
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Surface Alteration ◽  
Excimer Laser Irradiation ◽  
Arf Excimer Laser ◽  
Amorphous Si3n4
Sign in / Sign up

Export Citation Format

Share Document