Recent Progress on Research and Development of Electro-optical Modulators on Silicon Substrates

2014 ◽  
Vol 51 (11) ◽  
pp. 110009
Author(s):  
李智勇 Li Zhiyong ◽  
徐浩 Xu Hao ◽  
肖希 Xiao Xi ◽  
Nemkova Anastasia Nemkova Anastasia ◽  
余金中 Yu Jinzhong ◽  
...  
Keyword(s):  
Research And Development ◽  
Recent Progress ◽  
Silicon Substrates ◽  
Optical Modulators

Hydrometeorology

1978 ◽  
Vol 59 (5) ◽  
pp. 609-612 ◽  
Author(s):  
Eugene L. Peck
Keyword(s):  
Research And Development ◽  
Recent Progress ◽  
Additional Research

The paper presents a review of the activities of the Hydrology Committee of the AMS. In addition, recent progress and areas needing additional research and development in the field of hydrometeorology are discussed.

Recent Progress in Redox Flow Battery Research and Development

2012 ◽  
Vol 23 (8) ◽  
pp. 970-986 ◽  
Author(s):  
Wei Wang ◽  
Qingtao Luo ◽  
Bin Li ◽  
Xiaoliang Wei ◽  
Liyu Li ◽  
...  
Keyword(s):  
Research And Development ◽  
Recent Progress ◽  
Redox Flow Battery ◽  
Flow Battery

scholarly journals Photovoltaic Concentration: Research and Development

Energies ◽  
2020 ◽  
Vol 13 (21) ◽  
pp. 5721
Author(s):  
Sarah El Himer ◽  
Salima El Ayane ◽  
Sara El Yahyaoui ◽  
Jean Paul Salvestrini ◽  
Ali Ahaitouf
Keyword(s):  
Energy Source ◽  
Solar Cells ◽  
Research And Development ◽  
Concentration Ratio ◽  
Recent Progress ◽  
High Efficiency ◽  
Cost Effective ◽  
Optical Elements ◽  
Concise Overview

Concentrator Photovoltaic (CPV) technology, by using efficient optical elements, small sizes and high efficiency multi-junction solar cells, can be seen as a bright energy source to produce more cost-effective electricity. The main and basic idea is to replace the use of expensive solar cells with less expensive optical elements made from different materials. This paper aims to give to the readers a rapid and concise overview of CPV and the main characteristics to be considered when designing a CPV system. It reviews the main optical configurations presented in the literature, their advantages and drawbacks, as well as the recent progress in the concentration ratio and the major performances achieved in the field. The paper considers the more recent works, their optical designs, as well as their optical and electrical performances. It also relates the major achievements on the industrial side with the major milestones in CPV developments.

Surface-Normal Ge/SiGe Asymmetric Fabry–Perot Optical Modulators Fabricated on Silicon Substrates

2013 ◽  
Vol 31 (24) ◽  
pp. 3995-4003 ◽  
Author(s):  
Ross M. Audet ◽  
Elizabeth H. Edwards ◽  
Krishna C. Balram ◽  
Stephanie A. Claussen ◽  
Rebecca K. Schaevitz ◽  
...  
Keyword(s):  
Silicon Substrates ◽  
Optical Modulators ◽  
Surface Normal ◽  
Fabry Perot

Recent progress in research and development of hollow cathodes for electric propulsion

2019 ◽  
Vol 3 (1) ◽  
Author(s):  
Dan R. Lev ◽  
Ioannis G. Mikellides ◽  
Daniela Pedrini ◽  
Dan M. Goebel ◽  
Benjamin A. Jorns ◽  
...  
Keyword(s):  
Research And Development ◽  
Electric Propulsion ◽  
Recent Progress ◽  
Hollow Cathodes

Silicon Carbide: Progress in Crystal Growth

1987 ◽  
Vol 97 ◽  
Author(s):  
J. Anthony Powell
Keyword(s):  
Silicon Carbide ◽  
Crystal Growth ◽  
High Temperature ◽  
Epitaxial Growth ◽  
Recent Progress ◽  
Single Crystal Silicon ◽  
Silicon Substrates ◽  
Large Area ◽  
High Quality ◽  
Crystal Silicon

ABSTRACTSilicon carbide (SiC), with a favorable combination of semiconducting and refractory properties, has long been a candidate for high temperature semiconductor applications. Research on processes for producing the needed large-area high quality single crystals has proceeded sporadically for many years. Two characteristics of SiC have aggravated the problem of its crystal growth. First, it cannot be melted at any reasonable pressure, and second, it forms many different crystalline structures, called polytypes. Recent progress in the development of two crystal growth processes will be described. These processes are the modified Lely process for the growth of the alpha polytypes (e.g. 6H SiC), and a process for the epitaxial growth of the beta polytype (i.e. 3C or cubic SiC) on single crystal silicon substrates. A discussion of the semiconducting qualities of crystals grown by various techniques will also be included.

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