scholarly journals The Use of Drip Flow and Rotating Disk Reactors for Staphylococcus aureus Biofilm Analysis

10.3791/2470 ◽  
2010 ◽  
Author(s):  
Kelly Schwartz ◽  
Rachel Stephenson ◽  
Margarita Hernandez ◽  
Nicolays Jambang ◽  
Blaise Boles
Keyword(s):  
Staphylococcus Aureus ◽  
Rotating Disk ◽  
Rotating Disk Reactors

Modeling and experimental analysis of AlGaN MOVPE in commercial vertical high-speed rotating-disk reactors

2004 ◽  
Vol 261 (2-3) ◽  
pp. 190-196 ◽  
Author(s):  
K.M. Mazaev ◽  
A.V. Lobanova ◽  
E.V. Yakovlev ◽  
R.A. Talalaev ◽  
A.O. Galyukov ◽  
...  
Keyword(s):  
Experimental Analysis ◽  
High Speed ◽  
Rotating Disk ◽  
Rotating Disk Reactors

Vertical high-speed rotating disk reactors for production scale MOVPE of compound semiconductors

1994 ◽  
Author(s):  
Robert C. Walker ◽  
Alan G. Thompson ◽  
Gary S. Tompa ◽  
Peter A. Zawadzki ◽  
Alexander Gurary
Keyword(s):  
High Speed ◽  
Compound Semiconductors ◽  
Rotating Disk ◽  
Production Scale ◽  
Rotating Disk Reactors

Temperature Measurements Using In Thermocouple In The Mocvd Rotating Disk Reactors

1995 ◽  
Vol 406 ◽  
Author(s):  
A. I. Gurary ◽  
R. A. Stall
Keyword(s):  
Process Parameters ◽  
Chemical Vapor ◽  
Rotating Disk ◽  
Temperature Measurements ◽  
High Yield ◽  
Wafer Temperature ◽  
Rotating Disk Reactors ◽  
And Control ◽  
Measurement And Control ◽  
Accuracy And Repeatability

AbstractRotating Disk Reactors used for Metalorganic Chemical Vapor Deposition have evolved into a leading manufacturing technology for several materials, including nitrides, compound semiconductors, metals, and oxides. One of the major issues to be resolved in bringing this technology into routine high yield manufacturing has been precise and repeatable wafer temperature measurement and control. The conventional approach to the rotating wafer temperature measurements by a stationary thermocouple located near the rotating wafer carrier suffers from low accuracy and repeatability. We have implemented a rotating thermocouple with a junction located close to the wafer for the temperature measurements in the MOCVD Rotating Disk Reactor. This approach allowed us to obtain reliable and accurate wafer temperature measurements with minimum dependence upon variable process parameters and to protect the thermocouple from degradation in the aggressive reactor environment. The temperature difference between wafer and thermocouple for the rotating and stationary thermocouple designs as a function of process parameters will be discussed.

Parametric studies of III-nitride MOVPE in commercial vertical high-speed rotating disk reactors

2004 ◽  
Vol 266 (1-3) ◽  
pp. 354-362 ◽  
Author(s):  
A. Lobanova ◽  
K. Mazaev ◽  
E. Yakovlev ◽  
R. Talalaev ◽  
A. Galyukov ◽  
...  
Keyword(s):  
High Speed ◽  
Rotating Disk ◽  
Parametric Studies ◽  
Rotating Disk Reactors

Producing and Controlling Substrate Temperature Uniformity from 600°C to 1100°C in CVC Rotating Disk Reactors

1994 ◽  
Vol 363 ◽  
Author(s):  
A. I. Gurary ◽  
G. S. Tompa ◽  
R. A. Stall ◽  
W. J. Kroll ◽  
P. Zawadzki ◽  
...  
Keyword(s):  
Process Parameters ◽  
Chemical Vapor ◽  
Rotating Disk ◽  
High Yield ◽  
Temperature Uniformity ◽  
Wafer Temperature ◽  
Heating Systems ◽  
Wide Range ◽  
Rotating Disk Reactors ◽  
High Degree

AbstractRotating Disk Reactors used for Chemical Vapor Deposition have evolved into a leading manufacturing technology for several materials, including metals, compound semiconductors, oxides, silicides, and nitrides. One of the hurdles to be surmounted in bringing this technology into routine high yield manufacturing has been to produce and maintain a highly uniform temperature distribution over the deposition area. With our recent introduction of the real-time Rotating Wafer Thermal Imaging (RWTI) technique, we have made dramatic improvements in the implementation of multi-zone heating systems and producing a uniform deposition temperature. Using multi-zone heaters we have demonstrated wafer temperature uniformity of less than 2°C in the temperature range from 600°C to 1100°C for 50 mm substrates located on wafer carriers with diameters from 125 to 300 mm. The wafer temperature uniformity dependence upon process parameters such as reactor pressure, reactant flows, and wafer carrier rotation speed was investigated. We have shown that multi-zone heating systems can provide high wafer temperature uniformity over a wide range of the process parameters, whereas single zone heating can provide a high degree of wafer temperature uniformity only for a limited set of process parameters. The experimental data allowed us to establish requirements for the application of single and multi-zone heating systems in vertical MOCVD Rotating Disk Reactors.

Computational analysis of GaN/InGaN deposition in MOCVD vertical rotating disk reactors

2004 ◽  
Vol 261 (2-3) ◽  
pp. 175-181 ◽  
Author(s):  
L. Kadinski ◽  
V. Merai ◽  
A. Parekh ◽  
J. Ramer ◽  
E.A. Armour ◽  
...  
Keyword(s):  
Computational Analysis ◽  
Rotating Disk ◽  
Rotating Disk Reactors

The scaling of CVD rotating disk reactors to large sizes and comparison with theory

1996 ◽  
Vol 25 (9) ◽  
pp. 1487-1494 ◽  
Author(s):  
Alan G. Thompson ◽  
R. A. Stall ◽  
P. Zawadzki ◽  
G. H. Evans
Keyword(s):  
Rotating Disk ◽  
Rotating Disk Reactors

A simplified reaction model and numerical analysis for Si deposition from the SiHCl3-H2 system in vertical rotating disk reactors

2016 ◽  
Vol 454 ◽  
pp. 156-163 ◽  
Author(s):  
Soichiro Makino ◽  
Masahide Inagaki ◽  
Kenji Nakashima ◽  
Takahiro Kozawa ◽  
Nariaki Horinouchi
Keyword(s):  
Numerical Analysis ◽  
Rotating Disk ◽  
Reaction Model ◽  
Rotating Disk Reactors

Effect of nitrite and nitrate on biogenic sulfide production in sewer biofilms determined by the use of microelectrodes

2003 ◽  
Vol 47 (11) ◽  
pp. 281-288 ◽  
Author(s):  
S. Okabe ◽  
T. Ito ◽  
H. Satoh ◽  
Y. Watanabe
Keyword(s):  
Sulfate Reduction ◽  
Reduction Rate ◽  
Rotating Disk ◽  
Sulfate Reduction Rate ◽  
Reduction Zone ◽  
Sulfate Reducing ◽  
H2s Oxidation ◽  
Rotating Disk Reactors ◽  
Microelectrode Measurements

The effects of O2 and NO3− concentrations on in situ sulfate reduction and sulfide reoxidation in microaerophilic wastewater biofilms grown on rotating disk reactors were investigated by the use of microelectrodes for O2, S2−, NO3−, NO2−, and pH. Microelectrode measurements showed the vertical microzonation of O2 respiration, NO3− respiration, H2S oxidation and SO42− reduction in the biofilms. The microelectrode measurements indicate that sulfate reducing activity was largely restricted to a narrow anaerobic zone located about 500 μm below the biofilm surface. An addition of nitrate forced the sulfate reduction zone deeper in the biofilm and reduced the specific sulfate reduction rate as well. The sulfate reduction zone was consequently separated from the O2 and NO3− respiration zones. Anaerobic H2S oxidation with NO3− was also induced by addition of nitrate to the medium. Measurements of the reduced inorganic sulfur compounds (FeS, FeS2 and S0), total-Mn and total-Fe in the biofilm indicated that the produced H2S became immediately oxidized with O2, NO3− and other oxidants, mainly ferric/ferrous hydrates. On the basis of the present results, it was estimated that of all sulfide produced, 13% of the sulfide was precipitated by metal ions as FeS and S0 just above the sulfate reduction zone, 65% was anaerobically oxidized to SO42− with NO3− as an electron acceptor and 22% was aerobically oxidized within the biofilm incubated in 70 μmol l−1 of DO and 280 μmol l−1 of NO3−.

Deposition-Free Process on Reactor Sidewalls during Si Deposition in Vertical Rotating Disk Reactors

2018 ◽  
Vol 7 (8) ◽  
pp. P374-P379
Author(s):  
Soichiro Makino ◽  
Kenji Nakashima ◽  
Masahide Inagaki
Keyword(s):  
Rotating Disk ◽  
Free Process ◽  
Rotating Disk Reactors
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