Temperature Measurements Using In Thermocouple In The Mocvd Rotating Disk Reactors

1995 ◽  
Vol 406 ◽  
Author(s):  
A. I. Gurary ◽  
R. A. Stall
Keyword(s):  
Process Parameters ◽  
Chemical Vapor ◽  
Rotating Disk ◽  
Temperature Measurements ◽  
High Yield ◽  
Wafer Temperature ◽  
Rotating Disk Reactors ◽  
And Control ◽  
Measurement And Control ◽  
Accuracy And Repeatability

AbstractRotating Disk Reactors used for Metalorganic Chemical Vapor Deposition have evolved into a leading manufacturing technology for several materials, including nitrides, compound semiconductors, metals, and oxides. One of the major issues to be resolved in bringing this technology into routine high yield manufacturing has been precise and repeatable wafer temperature measurement and control. The conventional approach to the rotating wafer temperature measurements by a stationary thermocouple located near the rotating wafer carrier suffers from low accuracy and repeatability. We have implemented a rotating thermocouple with a junction located close to the wafer for the temperature measurements in the MOCVD Rotating Disk Reactor. This approach allowed us to obtain reliable and accurate wafer temperature measurements with minimum dependence upon variable process parameters and to protect the thermocouple from degradation in the aggressive reactor environment. The temperature difference between wafer and thermocouple for the rotating and stationary thermocouple designs as a function of process parameters will be discussed.

Producing and Controlling Substrate Temperature Uniformity from 600°C to 1100°C in CVC Rotating Disk Reactors

1994 ◽  
Vol 363 ◽  
Author(s):  
A. I. Gurary ◽  
G. S. Tompa ◽  
R. A. Stall ◽  
W. J. Kroll ◽  
P. Zawadzki ◽  
...  
Keyword(s):  
Process Parameters ◽  
Chemical Vapor ◽  
Rotating Disk ◽  
High Yield ◽  
Temperature Uniformity ◽  
Wafer Temperature ◽  
Heating Systems ◽  
Wide Range ◽  
Rotating Disk Reactors ◽  
High Degree

AbstractRotating Disk Reactors used for Chemical Vapor Deposition have evolved into a leading manufacturing technology for several materials, including metals, compound semiconductors, oxides, silicides, and nitrides. One of the hurdles to be surmounted in bringing this technology into routine high yield manufacturing has been to produce and maintain a highly uniform temperature distribution over the deposition area. With our recent introduction of the real-time Rotating Wafer Thermal Imaging (RWTI) technique, we have made dramatic improvements in the implementation of multi-zone heating systems and producing a uniform deposition temperature. Using multi-zone heaters we have demonstrated wafer temperature uniformity of less than 2°C in the temperature range from 600°C to 1100°C for 50 mm substrates located on wafer carriers with diameters from 125 to 300 mm. The wafer temperature uniformity dependence upon process parameters such as reactor pressure, reactant flows, and wafer carrier rotation speed was investigated. We have shown that multi-zone heating systems can provide high wafer temperature uniformity over a wide range of the process parameters, whereas single zone heating can provide a high degree of wafer temperature uniformity only for a limited set of process parameters. The experimental data allowed us to establish requirements for the application of single and multi-zone heating systems in vertical MOCVD Rotating Disk Reactors.

scholarly journals Non-Contact True Temperature Measurements for Process Diagnostics

1988 ◽  
Vol 117 ◽  
Author(s):  
Mansoor A. Khan ◽  
Charly Allemand ◽  
Thomas W. Eagar
Keyword(s):  
Calibration Procedure ◽  
Temperature Measurements ◽  
Physical Contact ◽  
True Temperature ◽  
Hostile Environment ◽  
Process Diagnostics ◽  
The Subject ◽  
And Control ◽  
Measurement And Control

The accurate measurement and control of temperature can be of great importance in most materials manufacturing and processing applications. With present-day technology such measurement almost always requires either physical contact with the subject or an extensive calibration procedure. In many cases contact is either not desirable, because such contact may significantly alter the temperature or other characteristics of the subject, or is not possible because the subject is moving, is too far away, is too hot or is in an otherwise hostile environment. Similarly calibration may not be possible if the characteristics change too much.

Development and Implementation of Large Area, Economical Rotating Disk Reactor Technology for Metalorganic Chemical Vapor Deposition

1993 ◽  
Vol 335 ◽  
Author(s):  
G. S. Tompa ◽  
P. A. Zawadzki ◽  
M. Mckee ◽  
E. Wolak ◽  
K. Moy ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Rotating Disk ◽  
High Yield ◽  
Thermal Dynamics ◽  
Material Systems ◽  
Rotating Disk Reactor ◽  
Metalorganic Chemical

AbstractThe vertical, high speed, rotating disk reactor (RDR) has, in recent years, found broad application in the Metalorganic Chemical Vapor Deposition of a variety of material systems. These applications include epitaxial films of III-V and II-VI compound semiconductors, oxides (such as YBCO superconductors/ferroelectrics and SiO2, amongst others), Group IV materials (such as diamond and SiC), and metals (such as copper and tungsten). As production of these material systems increases, so too does the need for economical, high yield equipment capable of producing these materials with high levels of uniformity and repeatability. We have used computational fluid dynamic modeling to investigate the complex flow and thermal dynamics required for scaling existing RDRs (as large as a 7.25″ diameter disk handling up to 3×3″ wafers) to larger dimensions (11″ and 12″ diameter disks for multiple 4″ and 15.5″ diameter disk for 3×6″ wafers). The scaling parameters predicted by the modeling codes are reviewed and correlate well with experimental results. Materials results on GaAs films using TBAs, TMGa, and TMA1 for the 11″ diameter system routinely demonstrate within wafer thickness uniformities of <1.1% for 3×4″ wafers, as well as for 6″ or 8″ diameters, wafer to wafer uniformities <1% and run to run repeatabilities within 1%. These results are verified by SEM analysis, as well as with GaAs/AJGaAs Bragg reflectors. The excellent results on the 11″ and 15.5″ diameter platters combined with modeling indicated that 4×4″ wafers on a 12″ diameter platter would produce ideal films which, indeed, is the case. The 11″ diameter results have been surpassed, demonstrating <0.9% for >9″ diameters (4×4″ wafers) on a 12″ diameter susceptor. With high reactant efficiencies (>3 6%), short cycle times between growths using the loadlock, and minimal maintenance requirements, the costs per wafer in a cost of ownership model are found to be dramatically less than in competitive technologies.

Temperature Measurement and Control in a Rapid Thermal Processor

1985 ◽  
Vol 52 ◽  
Author(s):  
Ronald E. Sheets
Keyword(s):  
Thermal Processing ◽  
Background Radiation ◽  
Optical Pyrometer ◽  
Wafer Temperature ◽  
Loop Control ◽  
Closed Loop Control System ◽  
Loop Control System ◽  
And Control ◽  
Measurement And Control ◽  
Temperature Surface

ABSTRACTRapid Thermal Processing (RTP) of silicon or other semiconductor materials requires accurate measurement and control of temperature. In a typical RTP cycle, heating of the wafer takes place in seconds, making accurate control of the wafer temperature very critical. Non contact wafer temperature sensing is achieved using an optical pyrometer. Precise temperature control from 400° C to 1350° C is maintained with a closed loop control system consisting of an optical pyrometer and a computer. Sources of errors due to variations in emissivity as a function of wafer temperature, surface conditions and background radiation are discussed. Calibration of the system is achieved by using a thermocouple instrumented wafer.

Advances in Rtp Temperature Measurement and Control

1998 ◽  
Vol 525 ◽  
Author(s):  
Bruce Peuse ◽  
Gary Miner ◽  
Mark Yam ◽  
Curtis Elia
Keyword(s):  
Temperature Measurement ◽  
Real Time ◽  
Temperature Control ◽  
Spectral Emissivity ◽  
Measurement Tool ◽  
Wafer Temperature ◽  
Heating Source ◽  
Temperature Performance ◽  
And Control ◽  
Measurement And Control

ABSTRACTThis paper reviews work to develop and improve the temperature measurement and control technology of a commercial rapid thermal processing (RTP) system. A description of the main features of this system is given, which includes a concentric multi-zone lamp heating source, multi-point temperature measurement system and real time wafer temperature control. Innovations in RTP optical thermometry are described which resulted in improved low temperature performance, a real time spectral emissivity measurement tool which enables emissivity independent temperature measurement and an improved temperature calibration capability. The multi-input multi-output (MIMO) optimal wafer temperature control methodology is discussed. Process results demonstrating an equivalent process temperature performance of 4°C, 3-sigma, all-points-all-wafers will be presented.

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