A simplified reaction model and numerical analysis for Si deposition from the SiHCl3-H2 system in vertical rotating disk reactors

2016 ◽  
Vol 454 ◽  
pp. 156-163 ◽  
Author(s):  
Soichiro Makino ◽  
Masahide Inagaki ◽  
Kenji Nakashima ◽  
Takahiro Kozawa ◽  
Nariaki Horinouchi
Author(s):  
Joonguen Park ◽  
Shinku Lee ◽  
Sunyoung Kim ◽  
Joongmyeon Bae

This paper discusses a numerical analysis of the heat and mass transfer characteristics in an autothermal methane reformer. Assuming local thermal equilibrium between the bulk gas and the surface of the catalyst, a one-medium approach for the porous medium analysis was incorporated. Also, the mass transfer between the bulk gas and the catalyst’s surface was neglected due to the relatively low gas velocity. For the catalytic surface reaction, the Langmuir–Hinshelwood model was incorporated in which methane (CH4) is reformed to hydrogen-rich gases by the autothermal reforming (ATR) reaction. Full combustion, steam reforming, water-gas shift, and direct steam reforming reactions were included in the chemical reaction model. Mass, momentum, energy, and species balance equations were simultaneously calculated with the chemical reactions for the multiphysics analysis. By varying the four operating conditions (inlet temperature, oxygen to carbon ratio (OCR), steam to carbon ratio, and gas hourly space velocity (GHSV)), the performance of the ATR reactor was estimated by the numerical calculations. The SR reaction rate was improved by an increased inlet temperature. The reforming efficiency and the fuel conversion reached their maximum values at an OCR of 0.7. When the GHSV was increased, the reforming efficiency increased but the large pressure drop may decrease the system efficiency. From these results, we can estimate the optimal operating conditions for the production of large amounts of hydrogen from methane.


2004 ◽  
Vol 261 (2-3) ◽  
pp. 190-196 ◽  
Author(s):  
K.M. Mazaev ◽  
A.V. Lobanova ◽  
E.V. Yakovlev ◽  
R.A. Talalaev ◽  
A.O. Galyukov ◽  
...  

1994 ◽  
Author(s):  
Robert C. Walker ◽  
Alan G. Thompson ◽  
Gary S. Tompa ◽  
Peter A. Zawadzki ◽  
Alexander Gurary

1995 ◽  
Vol 406 ◽  
Author(s):  
A. I. Gurary ◽  
R. A. Stall

AbstractRotating Disk Reactors used for Metalorganic Chemical Vapor Deposition have evolved into a leading manufacturing technology for several materials, including nitrides, compound semiconductors, metals, and oxides. One of the major issues to be resolved in bringing this technology into routine high yield manufacturing has been precise and repeatable wafer temperature measurement and control. The conventional approach to the rotating wafer temperature measurements by a stationary thermocouple located near the rotating wafer carrier suffers from low accuracy and repeatability. We have implemented a rotating thermocouple with a junction located close to the wafer for the temperature measurements in the MOCVD Rotating Disk Reactor. This approach allowed us to obtain reliable and accurate wafer temperature measurements with minimum dependence upon variable process parameters and to protect the thermocouple from degradation in the aggressive reactor environment. The temperature difference between wafer and thermocouple for the rotating and stationary thermocouple designs as a function of process parameters will be discussed.


2004 ◽  
Vol 266 (1-3) ◽  
pp. 354-362 ◽  
Author(s):  
A. Lobanova ◽  
K. Mazaev ◽  
E. Yakovlev ◽  
R. Talalaev ◽  
A. Galyukov ◽  
...  

1994 ◽  
Vol 363 ◽  
Author(s):  
A. I. Gurary ◽  
G. S. Tompa ◽  
R. A. Stall ◽  
W. J. Kroll ◽  
P. Zawadzki ◽  
...  

AbstractRotating Disk Reactors used for Chemical Vapor Deposition have evolved into a leading manufacturing technology for several materials, including metals, compound semiconductors, oxides, silicides, and nitrides. One of the hurdles to be surmounted in bringing this technology into routine high yield manufacturing has been to produce and maintain a highly uniform temperature distribution over the deposition area. With our recent introduction of the real-time Rotating Wafer Thermal Imaging (RWTI) technique, we have made dramatic improvements in the implementation of multi-zone heating systems and producing a uniform deposition temperature. Using multi-zone heaters we have demonstrated wafer temperature uniformity of less than 2°C in the temperature range from 600°C to 1100°C for 50 mm substrates located on wafer carriers with diameters from 125 to 300 mm. The wafer temperature uniformity dependence upon process parameters such as reactor pressure, reactant flows, and wafer carrier rotation speed was investigated. We have shown that multi-zone heating systems can provide high wafer temperature uniformity over a wide range of the process parameters, whereas single zone heating can provide a high degree of wafer temperature uniformity only for a limited set of process parameters. The experimental data allowed us to establish requirements for the application of single and multi-zone heating systems in vertical MOCVD Rotating Disk Reactors.


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