scholarly journals Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis

10.3791/62015 ◽  
2021 ◽  
Author(s):  
Masahiro Ohtsuka ◽  
Shunsuke Muto
Keyword(s):  
Point Defects ◽  
Crystalline Materials ◽  
Atomic Site ◽  
Site Analysis ◽  
Electron Channeling

HARECX Measurements of Electron Channeling Effects on Quantitative AEM-Based XEDS

2000 ◽  
Vol 6 (S2) ◽  
pp. 938-939
Author(s):  
Nestor J. Zaluzec
Keyword(s):  
Angular Resolution ◽  
High Angular Resolution ◽  
Crystalline Materials ◽  
X Ray ◽  
Electron Channeling ◽  
Resolution Electron ◽  
Analytical Electron ◽  
Analytical Electron Microscope ◽  
Tem Mode ◽  
Impurity Elements

It has been long known that orientation effects in crystalline materials can influence characteristic x-ray emission and microanalysis. Most of the recent studies have concentrated upon using the phenomenon to perform site specific distributions of impurity elements in ordered compounds using the ALCHEMI methodology. For the most part, it has been asserted that increasing the parameters of thickness, orientation and beam convergence effectively averages out these effects. Using High Angular Resolution Electron Channeling X-ray Spectroscopy (HARECXS) we have carefully measured the phenomenon in a number of ordered systems and find that it must be considered in many cases.All experimental measurements presented here were conducted on a Philips EM 420T analytical electron microscope. The instrument was operated in the TEM mode, at 120 kV using a LaB6 electron source. The characteristic x-ray emission was measured using an ED AX ultra thin window Si(Li) detector having a FWHM of ∼ 145 eV at Mn Ka.

Physics of Elasticity and Crystal Defects

2020 ◽  
Author(s):  
Adrian P. Sutton
Keyword(s):  
Point Defects ◽  
Unique Feature ◽  
Materials Science ◽  
Theory Of Elasticity ◽  
Crystal Defects ◽  
Atomic Diffusion ◽  
Postgraduate Students ◽  
Crystalline Materials ◽  
Elastic Fields ◽  
Fundamental Research

Mechanical properties of crystalline materials are almost always dominated by the defects within them. The ability to shape metals into pipes, girders and furniture stems from the generation, motion and interaction of these defects. Defects are also the agents of chemical changes within crystals, enabling mass transport by atomic diffusion and changes of phase. Defects distort the crystal and these distortions enable defects to interact over large distances. The theory of elasticity is used to describe these interactions. Assuming no familiarity with the theory, this book introduces the reader to linear elasticity and its application to point defects, dislocations and cracks. A unique feature of the book is the attention given to the atomic structure of defects and its influence on their properties and their elastic fields. Where it is available brief biographical information is provided about prominent contributors to the field. This textbook is written for postgraduate students in physics, engineering and materials science. It is very likely that even those students with some knowledge of elasticity and defects will find much that is new to them in this book.There are exercises to help the student check their understanding as they work through each chapter. The student is guided through more advanced problems at the end of each chapter. Worked solutions to all exercises and problems are available to course instructors from the OUP website. The last chapter describes four technologically important areas requiring fundamental research, with suggestions for possible PhD projects.

scholarly journals Quick-start guide for first-principles modelling of point defects in crystalline materials

2020 ◽  
Vol 2 (3) ◽  
pp. 036001
Author(s):  
Sunghyun Kim ◽  
Samantha N Hood ◽  
Ji-Sang Park ◽  
Lucy D Whalley ◽  
Aron Walsh
Keyword(s):  
Point Defects ◽  
First Principles ◽  
Crystalline Materials

scholarly journals Extended Point Defects in Crystalline Materials: Ge and Si

2013 ◽  
Vol 110 (15) ◽  
Author(s):  
N. E. B. Cowern ◽  
S. Simdyankin ◽  
C. Ahn ◽  
N. S. Bennett ◽  
J. P. Goss ◽  
...  
Keyword(s):  
Point Defects ◽  
Crystalline Materials ◽  
Extended Point

Point Defects and Diffusion in Nonstoichiometric Metal Oxides

MRS Bulletin ◽  
1991 ◽  
Vol 16 (12) ◽  
pp. 27-32 ◽  
Author(s):  
Rüdiger Dieckmann
Keyword(s):  
Metal Oxides ◽  
Grain Boundaries ◽  
Point Defect ◽  
Point Defects ◽  
Defect Structure ◽  
Ionic Crystals ◽  
Ion Diffusion ◽  
Crystalline Materials ◽  
And Diffusion ◽  
Point Defect Structure

This article briefly reviews the relationships between point defects and ion diffusion in nonstoichiometric ionic crystals, with special emphasis on cubic oxides. It focuses on crystalline materials with negligibly small concentrations of nonequilibrium defects such as dislocations and grain boundaries. First, the concepts used to analyze the point defect structure and the diffusion of ions in nonstoichiometric crystals will be discussed. Then, specific oxides will be considered as examples. These oxides are manganosite, Mn1−ΔO, and spinels of the type Me3−δO4 with Fe and Mn cations, respectively.

Enhanced Diffusion in Silicon Processing

MRS Bulletin ◽  
2000 ◽  
Vol 25 (6) ◽  
pp. 39-44 ◽  
Author(s):  
Nicholas Cowern ◽  
Conor Rafferty
Keyword(s):  
Point Defects ◽  
Atomic Scale ◽  
Dopant Atom ◽  
Ideal Crystal ◽  
Crystalline Materials ◽  
Silicon Lattice ◽  
Enhanced Diffusion ◽  
Interstitial Atoms ◽  
Scale Point ◽  
Grade Silicon

Semiconductor-grade silicon is one of the most perfect crystalline materials that can be fabricated. It contains less than 1 ppb of unintended impurities and negligible twins or dislocations. Dopants can diffuse in this near-ideal crystal only by interacting with atomic-scale point defects: interstitial atoms or vacancies. These defects migrate through the silicon lattice, occasionally binding with a dopant atom and displacing it by one or more lattice positions.

scholarly journals Recent Development of Quantitative Microanalysis Method Based on Electron Channeling Effects in Crystalline Materials

Materia Japan ◽  
2019 ◽  
Vol 58 (2) ◽  
pp. 73-76
Author(s):  
Masahiro Ohtsuka ◽  
Shunsuke Muto
Keyword(s):  
Crystalline Materials ◽  
Electron Channeling ◽  
Quantitative Microanalysis
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