Development of Lunar Surface Charging Environment Simulation Chamber

Abstract. This paper shows how the exposure of the Moon to the Earth's plasmasheet is subject to decadal variations due to lunar precession. The latter is a key property of the Moon's apparent orbit around the Earth – the nodes of that orbit precess around the ecliptic, completing one revolution every 18.6 years. This precession is responsible for a number of astronomical phenomena, e.g. the year to year drift of solar and lunar eclipse periods. It also controls the ecliptic latitude at which the Moon crosses the magnetotail and thus the number and duration of lunar encounters with the plasmasheet. This paper presents a detailed model of those encounters and applies it to the period 1960 to 2030. This shows that the total lunar exposure to the plasmasheet will vary from 10 h per month at a minimum of the eighteen-year cycle rising to 40 h per month at the maximum. These variations could have a profound impact on the accumulation of charge due plasmasheet electrons impacting the lunar surface. Thus we should expect the level of lunar surface charging to vary over the eighteen-year cycle. The literature contains reports that support this: several observations made during the cycle maximum of 1994–2000 are attributed to bombardment and charging of the lunar surface by plasmasheet electrons. Thus we conclude that lunar surface charging will vary markedly over an eighteen-year cycle driven by lunar precession. It is important to interpret lunar environment measurements in the context of this cycle and to allow for the cycle when designing equipment for deployment on the lunar surface. This is particularly important in respect of developing plans for robotic exploration on the lunar surface during the next cycle maximum of 2012–2019.

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The Geosciences Applied to Lunar Exploration

Symposium - International Astronomical Union ◽

10.1017/s0074180900178222 ◽

1962 ◽

Vol 14 ◽

pp. 169-257 ◽

Cited By ~ 9

Author(s):

J. Green

Keyword(s):

Lunar Surface ◽

Probable Mechanism ◽

Point Of View ◽

Lunar Exploration ◽

Geological Model ◽

Apply Geophysics ◽

Surface Features ◽

The Impact

The term geo-sciences has been used here to include the disciplines geology, geophysics and geochemistry. However, in order to apply geophysics and geochemistry effectively one must begin with a geological model. Therefore, the science of geology should be used as the basis for lunar exploration. From an astronomical point of view, a lunar terrain heavily impacted with meteors appears the more reasonable; although from a geological standpoint, volcanism seems the more probable mechanism. A surface liberally marked with volcanic features has been advocated by such geologists as Bülow, Dana, Suess, von Wolff, Shaler, Spurr, and Kuno. In this paper, both the impact and volcanic hypotheses are considered in the application of the geo-sciences to manned lunar exploration. However, more emphasis is placed on the volcanic, or more correctly the defluidization, hypothesis to account for lunar surface features.

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A Photographic Map of the Moon

Symposium - International Astronomical Union ◽

10.1017/s0074180900178179 ◽

1962 ◽

Vol 14 ◽

pp. 113-115

Author(s):

D. W. G. Arthur ◽

E. A. Whitaker

Keyword(s):

Lunar Surface ◽

The Moon ◽

Map Projection

The cartography of the lunar surface can be split into two operations which can be carried on quite independently. The first, which is also the most laborious, is the interpretation of the lunar photographs into the symbolism of the map, with the addition of fine details from telescopic sketches. An example of this kind of work is contained in Johann Krieger'sMond Atlaswhich consists of photographic enlargements in which Krieger has sharpened up the detail to accord with his telescopic impressions. Krieger did not go on either to convert the photographic picture into the line symbolism of a map, or to place this picture on any definite map projection.

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Charging microscopy and cathodoluminescence imaging of semi-insulating gallium arsenide

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010014542x ◽

1986 ◽

Vol 44 ◽

pp. 816-817

Author(s):

T.C. Sheu ◽

S. Myhajlenko ◽

D. Davito ◽

J.L. Edwards ◽

R. Roedel ◽

...

Keyword(s):

Integrated Circuits ◽

Secondary Electron ◽

Crystal Defects ◽

Device Performance ◽

Gaas Wafer ◽

Surface Charging ◽

Gaas Substrates ◽

Voltage Contrast ◽

Cathodoluminescence Imaging ◽

Scanning Electron

Liquid encapsulated Czochralski (LEC) semi-insulating (SI) GaAs has applications in integrated optics and integrated circuits. Yield and device performance is dependent on the homogeniety of the wafers. Therefore, it is important to characterise the uniformity of the GaAs substrates. In this respect, cathodoluminescence (CL) has been used to detect the presence of crystal defects and growth striations. However, when SI GaAs is examined in a scanning electron microscope (SEM), there will be a tendency for the surface to charge up. The surface charging affects the backscattered and secondary electron (SE) yield. Local variations in the surface charge will give rise to contrast (effectively voltage contrast) in the SE image. This may be associated with non-uniformities in the spatial distribution of resistivity. Wakefield et al have made use of “charging microscopy” to reveal resistivity variations across a SI GaAs wafer. In this work we report on CL imaging, the conditions used to obtain “charged” SE images and some aspects of the contrast behaviour.

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