Two steps chemical-mechanical polishing of rigid disk substrate to get atom-scale planarization surface

2006 ◽  
Vol 19 (04) ◽  
pp. 496 ◽  
Author(s):  
Hong LEI
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Rigid Disk ◽  
Disk Substrate

Preparation of Porous Alumina Abrasives with Different Morphologies and their Chemical Mechanical Polishing Behavior

2011 ◽  
Vol 338 ◽  
pp. 415-420 ◽  
Author(s):  
Xin Wu ◽  
Hong Lei ◽  
Ru Ling Chen
Keyword(s):  
Surface Roughness ◽  
Chemical Mechanical Polishing ◽  
Porous Alumina ◽  
Hard Disk ◽  
Mechanical Polishing ◽  
Testing Conditions ◽  
Solid Structure ◽  
Hard Disk Substrate ◽  
Disk Substrate

The traditional solid alumina abrasive has been widely used in commercial slurries. But it is easy to cause polishing scratches due to its dense solid structure. The morphology of the abrasives can also impact on the chemical mechanical polishing (CMP) performances. To improve the CMP performances of the hard disk substrate, rods-like porous alumina and flower-like porous alumina abrasives were prepared and their chemical mechanical polishing behavior investigated. The results showed that the porous alumina abrasives with different morphologies exhibited lower topographical variations and surface roughness than solid alumina abrasives under the same testing conditions.

Chemical mechanical polishing of hard disk substrate with α-alumina-g-polystyrene sulfonic acid composite abrasive

2010 ◽  
Vol 518 (14) ◽  
pp. 3792-3796 ◽  
Author(s):  
Hong Lei ◽  
Naijing Bu ◽  
Ruling Chen ◽  
Ping Hao ◽  
Sima Neng ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Sulfonic Acid ◽  
Hard Disk ◽  
Mechanical Polishing ◽  
Polystyrene Sulfonic Acid ◽  
Hard Disk Substrate ◽  
Disk Substrate

Preparation of Silica-Based Alkaline Slurry and its Application on Chemical Mechanical Polishing of Hard Disk Substrates

2010 ◽  
Vol 44-47 ◽  
pp. 3067-3071
Author(s):  
Sheng Li Wang ◽  
Zhen Xia Li ◽  
Hui Lai Mu ◽  
Yu Tian ◽  
Li Bing Yang
Keyword(s):  
Chemical Mechanical Polishing ◽  
Ph Value ◽  
Removal Rate ◽  
Hard Disk ◽  
Mechanical Polishing ◽  
Experimental Result ◽  
Alkali Concentration ◽  
Oxidant Concentration ◽  
Hard Disk Substrate ◽  
Disk Substrate

Chemical mechanical polishing (CMP) is the effective technology which obtains high accuracy surface of hard disk substrate with nickel-phosphorus (Ni-P) coating. The slurry is significant factor in hard disk substrate CMP. Colloidal silica-based alkaline slurry was prepared based on negative pressure vortex method. The effects of slurry parameters such as abrasive concentration, organic alkali concentration and oxidant concentration on material removal rate and surface characteristics were investigated. The experimental result indicated that the abrasive concentration was 20wt%, the slurry pH value was 11.2, the oxidant concentration was 15ml/L, improved surface roughness and polishing efficiency of hard disk substrates, a smooth surface was obtained and micro scratches could hardly be observed.

Particles detection and analysis of hard disk substrate after cleaning of post chemical mechanical polishing

2009 ◽  
Vol 255 (22) ◽  
pp. 9100-9104 ◽  
Author(s):  
Yating Huang ◽  
Xinchun Lu ◽  
Guoshun Pan ◽  
Bill Lee ◽  
Jianbin Luo
Keyword(s):  
Chemical Mechanical Polishing ◽  
Hard Disk ◽  
Mechanical Polishing ◽  
Hard Disk Substrate ◽  
Disk Substrate

scholarly journals Kinematic Prediction and Experimental Demonstration of Conditioning Process for Controlling the Profile Shape of a Chemical Mechanical Polishing Pad

2021 ◽  
Vol 11 (10) ◽  
pp. 4358
Author(s):  
Hanchul Cho ◽  
Taekyung Lee ◽  
Doyeon Kim ◽  
Hyoungjae Kim
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Shape Error ◽  
Profile Shape ◽  
Conditioning Process ◽  
Polishing Pad ◽  
Simulation Based ◽  
Diamond Conditioner ◽  
Pad Conditioning ◽  
Good Agreement

The uniformity of the wafer in a chemical mechanical polishing (CMP) process is vital to the ultra-fine and high integration of semiconductor structures. In particular, the uniformity of the polishing pad corresponding to the tool directly affects the polishing uniformity and wafer shape. In this study, the profile shape of a CMP pad was predicted through a kinematic simulation based on the trajectory density of the diamond abrasives of the diamond conditioner disc. The kinematic prediction was found to be in good agreement with the experimentally measured pad profile shape. Based on this, the shape error of the pad could be maintained within 10 μm even after performing the pad conditioning process for more than 2 h, through the overhang of the conditioner.

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