The Influence of Media Concentrations on the Passivation Layer Characteristics of Al-Zn Alloys in Brine Environment

2008 ◽  
Vol 1 (2) ◽  
pp. 113-121 ◽  
Author(s):  
C.E. Ekuma ◽  
N.E. Idenyi ◽  
F.K. Onwu ◽  
A.E. Umahi
Author(s):  
Younan Hua ◽  
Bingsheng Khoo ◽  
Henry Leong ◽  
Yixin Chen ◽  
Eason Chan ◽  
...  

Abstract In wafer fabrication, a silicon nitride (Si3N4) layer is widely used as passivation layer. To qualify the passivation layers, traditionally chemical recipe PAE (H3PO4+ HNO3) is used to conduct passivation pinhole test. However, it is very challenging for us to identify any pinholes in the Si3N4 layer with different layers underneath. For example, in this study, the wafer surface is Si3N4 layer and the underneath layer is silicon substrate. The traditional receipt of PAE cannot be used for passivation qualification. In this paper, we will report a new recipe using KOH solution to identify the pinhole in the Si3N4 passivation layer.


2021 ◽  
pp. 2100002
Author(s):  
Yunjo Jeong ◽  
Ossie Douglas ◽  
Utkarsh Misra ◽  
Md Rubayat‐E Tanjil ◽  
Kenji Watanabe ◽  
...  

Calphad ◽  
2021 ◽  
Vol 72 ◽  
pp. 102253
Author(s):  
Alan Dinsdale ◽  
Alexandra Khvan ◽  
Ekaterina A. Smirnova ◽  
Alena V. Ponomareva ◽  
Igor A. Abrikosov

2005 ◽  
Vol 152 (8) ◽  
pp. C542 ◽  
Author(s):  
S. D. Beattie ◽  
J. R. Dahn
Keyword(s):  

2021 ◽  
Vol 804 ◽  
pp. 140697
Author(s):  
Reza Alizadeh ◽  
Jingya Wang ◽  
Javier LLorca

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