WHY AND HOW TYPE OF PASSIVATION LAYER AFFECTS THE PROPERTIES OF ALUMINUM NANOPOWDERS FOR ENERGETIC APPLICATIONS

2007 ◽  
Vol 6 (2) ◽  
pp. 171-180
Author(s):  
Alexander Gromov ◽  
Ulrich Forter-Barth ◽  
Ulrich Teipel
Keyword(s):  
Passivation Layer

Studies on a Novel Qualification Method of Silicon Nitride Layer

2016 ◽  
Author(s):  
Younan Hua ◽  
Bingsheng Khoo ◽  
Henry Leong ◽  
Yixin Chen ◽  
Eason Chan ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Substrate ◽  
Nitride Layer ◽  
Passivation Layer ◽  
Wafer Fabrication ◽  
Wafer Surface ◽  
Si3n4 Layer ◽  
Silicon Nitride Layer ◽  
Passivation Layers ◽  
Pinhole Test

Abstract In wafer fabrication, a silicon nitride (Si3N4) layer is widely used as passivation layer. To qualify the passivation layers, traditionally chemical recipe PAE (H3PO4+ HNO3) is used to conduct passivation pinhole test. However, it is very challenging for us to identify any pinholes in the Si3N4 layer with different layers underneath. For example, in this study, the wafer surface is Si3N4 layer and the underneath layer is silicon substrate. The traditional receipt of PAE cannot be used for passivation qualification. In this paper, we will report a new recipe using KOH solution to identify the pinhole in the Si3N4 passivation layer.

scholarly journals Hexagonal Boron Nitride: Mitigation of Electromigration in Metal Interconnects via Hexagonal Boron Nitride as an Ångström‐Thin Passivation Layer (Adv. Electron. Mater. 6/2021)

2021 ◽  
Vol 7 (6) ◽  
pp. 2170020
Author(s):  
Yunjo Jeong ◽  
Ossie Douglas ◽  
Utkarsh Misra ◽  
Md Rubayat‐E Tanjil ◽  
Kenji Watanabe ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Passivation Layer ◽  
Metal Interconnects

Mitigation of Electromigration in Metal Interconnects via Hexagonal Boron Nitride as an Ångström‐Thin Passivation Layer

2021 ◽  
pp. 2100002
Author(s):  
Yunjo Jeong ◽  
Ossie Douglas ◽  
Utkarsh Misra ◽  
Md Rubayat‐E Tanjil ◽  
Kenji Watanabe ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Passivation Layer ◽  
Metal Interconnects

Phosphating passivation layer for quantum dot sensitized solar cells

2021 ◽  
Vol 727 ◽  
pp. 138678
Author(s):  
Mei Xin Chen ◽  
Ya Qian Bai ◽  
Xin Na Guan ◽  
Jia Wei Chen ◽  
Jing Hui Zeng
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Passivation Layer ◽  
Sensitized Solar Cells

scholarly journals A Flexible PI/Si/SiO2 Piezoresistive Microcantilever for Trace-Level Detection of Aflatoxin B1

Sensors ◽  
2021 ◽  
Vol 21 (4) ◽  
pp. 1118
Author(s):  
Yuan Tian ◽  
Yi Liu ◽  
Yang Wang ◽  
Jia Xu ◽  
Xiaomei Yu
Keyword(s):  
Single Crystal ◽  
Aflatoxin B1 ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Wheatstone Bridge ◽  
Silicon On Insulator ◽  
Passivation Layer ◽  
Spring Constant ◽  
Trace Level ◽  
Crystal Silicon

In this paper, a polyimide (PI)/Si/SiO2-based piezoresistive microcantilever biosensor was developed to achieve a trace level detection for aflatoxin B1. To take advantage of both the high piezoresistance coefficient of single-crystal silicon and the small spring constant of PI, the flexible piezoresistive microcantilever was designed using the buried oxide (BOX) layer of a silicon-on-insulator (SOI) wafer as a bottom passivation layer, the topmost single-crystal silicon layer as a piezoresistor layer, and a thin PI film as a top passivation layer. To obtain higher sensitivity and output voltage stability, four identical piezoresistors, two of which were located in the substrate and two integrated in the microcantilevers, were composed of a quarter-bridge configuration wheatstone bridge. The fabricated PI/Si/SiO2 microcantilever showed good mechanical properties with a spring constant of 21.31 nN/μm and a deflection sensitivity of 3.54 × 10−7 nm−1. The microcantilever biosensor also showed a stable voltage output in the Phosphate Buffered Saline (PBS) buffer with a fluctuation less than 1 μV @ 3 V. By functionalizing anti-aflatoxin B1 on the sensing piezoresistive microcantilever with a biotin avidin system (BAS), a linear aflatoxin B1 detection concentration resulting from 1 ng/mL to 100 ng/mL was obtained, and the toxic molecule detection also showed good specificity. The experimental results indicate that the PI/Si/SiO2 flexible piezoresistive microcantilever biosensor has excellent abilities in trace-level and specific detections of aflatoxin B1 and other biomolecules.

A New Method For The Electronic And Chemical Passivation Of GaAs Surfaces Using CS2

1995 ◽  
Vol 406 ◽  
Author(s):  
Ju-Hyung Lee ◽  
Yanzhen Xu ◽  
Veronica A. Burrows ◽  
Paul F. McMillan
Keyword(s):  
Surface Passivation ◽  
Passivation Layer ◽  
Semiconductor Diode ◽  
Photoluminescence Intensity ◽  
Atmospheric Conditions ◽  
Metal Insulator ◽  
Insulating Layer ◽  
Capacitance Voltage ◽  
Chemical Passivation ◽  
Homogeneous Film

AbstractA new GaAs surface passivation method, CS2 treatment at moderate temperature was developed for effective passivation of GaAs surfaces. The CS2 treatment of GaAs surfaces at 350°C and 10 atm leads to deposition of a homogeneous film, with a thickness of several hundred Å. The passivation layer thus produced causes a significant enhancement in room temperature photoluminescence intensity and the passivation effect of the sulfide film was confirmed by Raman spectroscopy. The passivation layer remained electrically and chemically stable over a period of nine months under ambient atmospheric conditions. In-depth Auger electron spectroscopy (AES) revealed that the carbon and oxygen content in the film was negligible, whereas sulfur was uniformly distributed throughout the film. A metal-insulator-semiconductor diode whose insulating layer is produced by the CS2 treatment shows well-defined accumulation and depletion regions in its capacitance-voltage (CV) characteristics with low hysteresis.

scholarly journals Aqueous phenol and ethylene glycol solutions in electrohydrodynamic liquid bridging

2011 ◽  
Vol 9 (3) ◽  
pp. 391-403 ◽  
Author(s):  
Mathias Eisenhut ◽  
Xinghua Guo ◽  
Astrid Paulitsch-Fuchs ◽  
Elmar Fuchs
Keyword(s):  
Mass Transport ◽  
Ethylene Glycol ◽  
Bisphenol A ◽  
Anodic Oxidation ◽  
High Voltage ◽  
Electrochemical Behavior ◽  
Pure Water ◽  
Passivation Layer ◽  
Mass Transfers ◽  
Electrophoretic Transport

AbstractThe formation of aqueous bridges containing phenol and ethylene glycol as well as bisphenol-A, hydrochinone and p-cresol under the application of high voltage DC (“liquid bridges”) is reported. Detailed studies were made for phenol and glycol with concentrations from 0.005 to 0.531 mol L−1. Conductivity as well as substance and mass transfers through these aqueous bridges are discussed and compared with pure water bridges. Previously suggested bidirectional mass transport is confirmed for the substances tested. Anodic oxidation happens more efficiently when phenol or glycol are transported from the cathode to the anode since in this case the formation of a passivation layer or electrode poisoning are retarded by the electrohydrodynamic (EHD) flow. The conductivity in the cathode beaker decreases in all experiments due to electrophoretic transport of naturally dissolved carbonate and bicarbonate to the anode. The observed electrochemical behavior is shortly discussed and compared to known mechanisms.

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