Binding Energies of Donor States in GaAs-GaAlAs Quantum Wells Under Hydrostatic Pressure

2008 ◽  
Vol 8 (4) ◽  
pp. 636-641 ◽  
Author(s):  
H. Panahi ◽  
M. Maleki
Keyword(s):  
Hydrostatic Pressure ◽  
Quantum Wells ◽  
Binding Energies ◽  
Donor States

Binding energies of donors in quantum wells under hydrostatic pressure

2003 ◽  
Vol 319 (1-2) ◽  
pp. 191-197 ◽  
Author(s):  
G.J Zhao ◽  
X.X Liang ◽  
S.L Ban
Keyword(s):  
Hydrostatic Pressure ◽  
Quantum Wells ◽  
Binding Energies

Hydrostatic Pressure and Screening Influence on Binding Energies of Impurity in Quantum Wells with Infinite Barriers

2012 ◽  
Vol 33 (5) ◽  
pp. 492-498
Author(s):  
刘贺 LIU He ◽  
温淑敏 WEN Shumin ◽  
赵春旺 ZHAO Chunwang ◽  
哈斯花 HA Sihua
Keyword(s):  
Hydrostatic Pressure ◽  
Quantum Wells ◽  
Binding Energies

EFFECT OF HYDROSTATIC PRESSURE ON THE BINDING ENERGIES OF EXCITONS IN QUANTUM WELLS

2007 ◽  
Vol 21 (16) ◽  
pp. 2735-2747 ◽  
Author(s):  
G. J. ZHAO ◽  
X. X. LIANG ◽  
S. L. BAN
Keyword(s):  
Dielectric Constant ◽  
Hydrostatic Pressure ◽  
Quantum Wells ◽  
Pressure Effect ◽  
Binding Energies ◽  
Band Offset ◽  
Conduction Band Offset ◽  
Effective Masses ◽  
Finite Barrier ◽  
Effect Of Hydrostatic Pressure

The binding energies of excitons in finite barrier quantum wells under hydrostatic pressure are calculated by a variational method. The influences of hydrostatic pressure on the effective masses of the electron and hole, the dielectric constant, and the conduction band offset between the well and barriers are taken into account in the calculation. The numerical results for the GaAs/Al x Ga 1-x As and GaN/Al x Ga 1-x N quantum wells are given respectively. It is shown that the exciton binding energy increases linearly with the pressure and the pressure effect on arsenide quantum wells is more obvious than that on nitride ones. The exciton binding energies monotonically increase with increasing barrier height, which is related to the Al concentration of the barriers and the influence of the pressure.

RESONANT DONOR STATES IN QUANTUM WELL

2011 ◽  
Vol 25 (02) ◽  
pp. 89-96 ◽  
Author(s):  
ARNOLD ABRAMOV
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Binding Energies ◽  
Wave Functions ◽  
Donor Impurity ◽  
Impurity States ◽  
Method Of Calculation ◽  
Resonant States ◽  
Versus Impurity ◽  
Donor States

A method of calculation of donor impurity states in a quantum well is developed. The used techniques have made it possible to find the binding energy both of ground and excited impurity states attached to each QW subband. The positions of the resonant states in 2D continuum are determined as poles of corresponding wave functions. As a result of such an approach the identification of resonant states in 2D continuum is avoided, introducing special criterions. The calculated dependences of binding energies versus impurity position are presented for various widths of Si / Si 1-x Ge x quantum wells.

Effects of hydrostatic pressure and crossed electric and magnetic fields on shallow-donor states in quantum wells

2008 ◽  
Vol 39 (3-4) ◽  
pp. 431-434 ◽  
Author(s):  
E. Tangarife ◽  
S.Y. López ◽  
M. de Dios-Leyva ◽  
L.E. Oliveira ◽  
C.A. Duque
Keyword(s):  
Hydrostatic Pressure ◽  
Magnetic Fields ◽  
Quantum Wells ◽  
Shallow Donor ◽  
Electric And Magnetic Fields ◽  
Donor States
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