RESONANT DONOR STATES IN QUANTUM WELL

2011 ◽  
Vol 25 (02) ◽  
pp. 89-96 ◽  
Author(s):  
ARNOLD ABRAMOV
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Binding Energies ◽  
Wave Functions ◽  
Donor Impurity ◽  
Impurity States ◽  
Method Of Calculation ◽  
Resonant States ◽  
Versus Impurity ◽  
Donor States

A method of calculation of donor impurity states in a quantum well is developed. The used techniques have made it possible to find the binding energy both of ground and excited impurity states attached to each QW subband. The positions of the resonant states in 2D continuum are determined as poles of corresponding wave functions. As a result of such an approach the identification of resonant states in 2D continuum is avoided, introducing special criterions. The calculated dependences of binding energies versus impurity position are presented for various widths of Si / Si 1-x Ge x quantum wells.

The impurity states in different shaped quantum wells under applied electric field

2020 ◽  
Vol 34 (25) ◽  
pp. 2050224
Author(s):  
Min Hu ◽  
Hailong Wang ◽  
Qian Gong
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Function Approximation ◽  
Transition Energy ◽  
Binding Energies ◽  
Wave Method ◽  
Donor Impurity ◽  
Impurity States ◽  
Transition Energies ◽  
Plane Wave Method

In this paper, the impurity states in square, parabolic and V-shaped quantum wells (QWs) are calculated by the plane wave method under the theoretical framework of effective mass envelope function approximation. In different shaped QWs, the impurity binding energies in 1s-like state and 2p-like state have the same trend with the increase of QW width. However, the transition energies of impurity states between 1s-like state and 2p-like state in three shaped QWs are different. When the width of QW is fixed, the transition energy in square QW is the minimum and that in V-shaped QW is the maximum. The effect of electric field is larger for the on-center donor impurity. The effect of electric field on the impurity states is the largest in square QW and the smallest in V-shaped QW.

Electronic and shallow donor impurity states in GaAs‐Ga1−xAlxAs quantum‐well wires: Effects of dielectric mismatch

1994 ◽  
Vol 75 (11) ◽  
pp. 7389-7393 ◽  
Author(s):  
Zhen‐Yan Deng ◽  
Ting‐Rong Lai ◽  
Jing‐Kun Guo ◽  
Shi‐Wei Gu
Keyword(s):  
Quantum Well ◽  
Shallow Donor ◽  
Donor Impurity ◽  
Impurity States ◽  
Quantum Well Wires ◽  
Dielectric Mismatch

Binding energies and density of impurity states of shallow hydrogenic impurities in cylindrical quantum-well wires

1991 ◽  
Vol 43 (2) ◽  
pp. 1824-1827 ◽  
Author(s):  
N. Porras Montenegro ◽  
J. López-Gondar ◽  
L. E. Oliveira
Keyword(s):  
Quantum Well ◽  
Binding Energies ◽  
Impurity States ◽  
Quantum Well Wires

SHALLOW DONORS IN A COUPLED TRIPLE GRADED QUANTUM WELL UNDER THE ELECTRIC AND MAGNETIC FIELDS

2006 ◽  
Vol 13 (04) ◽  
pp. 397-401 ◽  
Author(s):  
E. KASAPOGLU ◽  
H. SARI ◽  
I. SÖKMEN
Keyword(s):  
Binding Energy ◽  
Quantum Well ◽  
Quantum Wells ◽  
Electric Fields ◽  
Growth Direction ◽  
Physical Parameters ◽  
Donor Impurity ◽  
Quantum Well Structures ◽  
Hydrogenic Donor Impurity ◽  
Electric And Magnetic Fields

The binding energy of the donor in three different shaped triple graded GaAs -( Ga , Al ) As quantum wells which is obtained by changing the depth of the central-well potential (Vo) is calculated by using a variational approach. The results have been obtained in the presence of uniform magnetic and electric fields applied along the growth direction as a function of the impurity position. In addition, we also give the binding energy of the hydrogenic donor impurity for triple square quantum wells having the same physical parameters with triple graded quantum well structures in order to see the effect of different geometric confinements on the donor impurity binding energy.

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