EFFECT OF HYDROSTATIC PRESSURE ON THE BINDING ENERGIES OF EXCITONS IN QUANTUM WELLS

2007 ◽  
Vol 21 (16) ◽  
pp. 2735-2747 ◽  
Author(s):  
G. J. ZHAO ◽  
X. X. LIANG ◽  
S. L. BAN
Keyword(s):  
Dielectric Constant ◽  
Hydrostatic Pressure ◽  
Quantum Wells ◽  
Pressure Effect ◽  
Binding Energies ◽  
Band Offset ◽  
Conduction Band Offset ◽  
Effective Masses ◽  
Finite Barrier ◽  
Effect Of Hydrostatic Pressure

The binding energies of excitons in finite barrier quantum wells under hydrostatic pressure are calculated by a variational method. The influences of hydrostatic pressure on the effective masses of the electron and hole, the dielectric constant, and the conduction band offset between the well and barriers are taken into account in the calculation. The numerical results for the GaAs/Al x Ga 1-x As and GaN/Al x Ga 1-x N quantum wells are given respectively. It is shown that the exciton binding energy increases linearly with the pressure and the pressure effect on arsenide quantum wells is more obvious than that on nitride ones. The exciton binding energies monotonically increase with increasing barrier height, which is related to the Al concentration of the barriers and the influence of the pressure.

The Effect of Hydrostatic Pressure on Bound Polarons in Polar Semiconductor Heterojunctions

2003 ◽  
Vol 17 (17) ◽  
pp. 909-919 ◽  
Author(s):  
Y. L. Cao ◽  
S. L. Ban ◽  
G. J. Zhao
Keyword(s):  
Hydrostatic Pressure ◽  
Binding Energy ◽  
Variational Method ◽  
Pressure Effect ◽  
Longitudinal Optical ◽  
Binding Energies ◽  
Optical Phonons ◽  
Semiconductor Heterojunctions ◽  
Effect Of Hydrostatic Pressure

A variational method is used to investigate the binding energies of bound polarons near the interface in a GaAs/Al x Ga 1-x As heterojunction by considering the hydrostatic pressure effect. It is found that the comprehensive pressure effect on the heterojunction factors increases the binding energies near linearly. The pressure influence on the binding energy for the impurity located on the channel side is stronger than that for the impurity located on the barrier side. The pressure effect is more obvious when the impurity is located on the channel side and is not so far from the interface. The pressure influences on the longitudinal optical phonons and interface optical phonons are discussed.

Contactless electroreflectance of GaNyAs1−y/GaAs multi quantum wells: The conduction band offset and electron effective mass issues

2006 ◽  
Vol 138 (7) ◽  
pp. 365-370 ◽  
Author(s):  
R. Kudrawiec ◽  
M. Motyka ◽  
M. Gladysiewicz ◽  
J. Misiewicz ◽  
J.A. Gupta ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Effective Mass ◽  
Conduction Band ◽  
Band Offset ◽  
Electron Effective Mass ◽  
Conduction Band Offset

Conduction band offset and quantum states probed by capacitance–voltage measurements for InP/GaAs type-II ultrathin quantum wells

2011 ◽  
Vol 109 (7) ◽  
pp. 073702 ◽  
Author(s):  
S. D. Singh ◽  
V. K. Dixit ◽  
Shailesh K. Khamari ◽  
Ravi Kumar ◽  
A. K. Srivastava ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Conduction Band ◽  
Quantum States ◽  
Band Offset ◽  
Type Ii ◽  
Conduction Band Offset ◽  
Capacitance Voltage

Binding energies of donors in quantum wells under hydrostatic pressure

2003 ◽  
Vol 319 (1-2) ◽  
pp. 191-197 ◽  
Author(s):  
G.J Zhao ◽  
X.X Liang ◽  
S.L Ban
Keyword(s):  
Hydrostatic Pressure ◽  
Quantum Wells ◽  
Binding Energies

Hydrostatic Pressure and Screening Influence on Binding Energies of Impurity in Quantum Wells with Infinite Barriers

2012 ◽  
Vol 33 (5) ◽  
pp. 492-498
Author(s):  
刘贺 LIU He ◽  
温淑敏 WEN Shumin ◽  
赵春旺 ZHAO Chunwang ◽  
哈斯花 HA Sihua
Keyword(s):  
Hydrostatic Pressure ◽  
Quantum Wells ◽  
Binding Energies

Conduction Band Offset of InGaN/AlInGaN Quantum Wells Studied by Deep Level Transient Spectroscopic Technique

2012 ◽  
Vol 5 (9) ◽  
pp. 091001 ◽  
Author(s):  
Liwu Lu ◽  
Shichen Su ◽  
Chi-Chung Ling ◽  
Shijie Xu ◽  
Degang Zhao ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Conduction Band ◽  
Deep Level ◽  
Spectroscopic Technique ◽  
Band Offset ◽  
Conduction Band Offset

PRESSURE EFFECT ON THE INTERFACE EXCITONS IN A TYPE-II ZnTe/CdSe HETEROJUNCTION

2003 ◽  
Vol 17 (27n28) ◽  
pp. 1425-1435 ◽  
Author(s):  
Z. Z. GUO ◽  
X. X. LIANG ◽  
S. L. BAN
Keyword(s):  
Binding Energy ◽  
Ground State ◽  
Pressure Effect ◽  
Light Hole ◽  
Binding Energies ◽  
Wave Functions ◽  
Type Ii ◽  
Band Bending ◽  
Effective Masses ◽  
Transfer Method

A variational method is used to study the ground-state binding energies of interface light-hole excitons in ZnTe/CdSe type-II heterojunctions under the influence of hydrostatic pressure. The finite triangle potential well approximation is introduced considering the band bending near the interface. The asymptotic transfer method is adopted to obtain the sub-band energies and wave functions of the electrons and light holes. The pressure influence on the band offsets, the effective masses and the dielectric constant are considered in the calculation. The obvious pressure-induced increase of the exciton binding energy is demonstrated and the influences of the pressure-depended parameters on the binding energy are compared.

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