Impact of Metal Thickness and Field Shaper on the Time-varying Processes during Impulse Electromagnetic Forming in Tubular Geometries

Abstract The large ellipsoid parts are the main load-bearing components in the rocket tank, which are prone to wrinkle when using the traditional stamping. In order to solve the wrinkling problem in large parts, the EMIF method with a variable blank holder is proposed in this paper. The numerical simulation has shown that the sheet material near the blank holder is, as a consequence of stamping, subjected to circumferential compressive stress. When the drawing height was 100 mm, the sheet metal was notably wrinkled. In the electromagnetic forming (EMF) process, the sheet region facing the coil becomes thinner. However, the sheet metal thickness corresponding to the coil edge increases with the increase in forming height. If the EMF forming height is 150 mm, the sheet, which is in contact with the smooth mold, is deformed without a wrinkle. Compared to the traditional stamping, the EMF can significantly reduce the sheet metal wrinkling, improving the deformation height of the sheet metal smooth area.

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RELATION OF SHEET METAL THICKNESS AND DEFORMING DEPTH IN ELECTROMAGNETIC FORMING

Journal of Mechanical Engineering ◽

10.3901/jme.2003.03.062 ◽

2003 ◽

Vol 39 (03) ◽

pp. 62 ◽

Cited By ~ 1

Author(s):

Hongyan Chu

Keyword(s):

Sheet Metal ◽

Electromagnetic Forming ◽

Metal Thickness

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Growth of near noble metal Pd and Pt thin film silicides morphology and structure

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100112464 ◽

1984 ◽

Vol 42 ◽

pp. 498-499

Author(s):

E. I. Alessandrini ◽

M. O. Aboelfotoh

Keyword(s):

Noble Metals ◽

Annealing Temperature ◽

Chemical Compounds ◽

Barrier Properties ◽

Solid State Reactions ◽

Transmission Electron ◽

Stable Chemical ◽

Metal Thickness ◽

Amorphous Si ◽

Si Films

Considerable interest has been generated in solid state reactions between thin films of near noble metals and silicon. These metals deposited on Si form numerous stable chemical compounds at low temperatures and have found applications as Schottky barrier contacts to silicon in VLSI devices. Since the very first phase that nucleates in contact with Si determines the barrier properties, the purpose of our study was to investigate the silicide formation of the near noble metals, Pd and Pt, at very thin thickness of the metal films on amorphous silicon.Films of Pd and Pt in the thickness range of 0.5nm to 20nm were made by room temperature evaporation on 40nm thick amorphous Si films, which were first deposited on 30nm thick amorphous Si3N4 membranes in a window configuration. The deposition rate was 0.1 to 0.5nm/sec and the pressure during deposition was 3 x 10 -7 Torr. The samples were annealed at temperatures in the range from 200° to 650°C in a furnace with helium purified by hot (950°C) Ti particles. Transmission electron microscopy and diffraction techniques were used to evaluate changes in structure and morphology of the phases formed as a function of metal thickness and annealing temperature.

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