A novel approach to the evaluation of the interface roughness scattering form factor in intersubband transitions

2014 ◽  
Vol 64 (11) ◽  
pp. 1713-1720
Author(s):  
Nguyen Thanh Tien ◽  
Pham Thi Bich Thao ◽  
Le Tuan
Keyword(s):  
Form Factor ◽  
Interface Roughness ◽  
Intersubband Transitions ◽  
Novel Approach ◽  
Interface Roughness Scattering

scholarly journals Evidence of Intersubband Linewidth Narrowing Using Growth Interruption Technique

Photonics ◽  
2019 ◽  
Vol 6 (2) ◽  
pp. 38 ◽  
Author(s):  
Ngoc Tran ◽  
Giorgio Biasiol ◽  
Arnaud Jollivet ◽  
Alberto Bertocci ◽  
François Julien ◽  
...  
Keyword(s):  
Impurity Scattering ◽  
Undoped Sample ◽  
Interface Roughness ◽  
Threshold Intensity ◽  
Scattering Mechanism ◽  
Intersubband Transitions ◽  
Growth Interruption ◽  
Ionized Impurity Scattering ◽  
Interface Roughness Scattering ◽  
Coherent Emission

We report on the systematic study of two main scattering mechanisms on intersubband transitions, namely ionized impurity scattering and interface roughness scattering. The former mechanism has been investigated as a function of the dopants position within a multiple GaAs/AlGaAs quantum well structure and compared to the transition of an undoped sample. The study on the latter scattering mechanism has been conducted using the growth interruption technique. We report an improvement of the intersubband (ISB) transition linewidth up to 11% by interrupting growth at GaAs-on-AlGaAs interfaces. As a result, the lifetime of intersubband polaritons could be improved up to 9%. This leads to a reduction of 17% of the theoretical threshold intensity for polaritonic coherent emission. This work brings a useful contribution towards the realization of polariton-based devices.

Interface roughness scattering in type II broken-gap GaInAsSb/InAs single heterostructures

2007 ◽  
Vol 102 (11) ◽  
pp. 113710 ◽  
Author(s):  
M. P. Mikhailova ◽  
K. D. Moiseev ◽  
T. I. Voronina ◽  
T. S. Lagunova ◽  
Yu. P. Yakovlev
Keyword(s):  
Interface Roughness ◽  
Type Ii ◽  
Interface Roughness Scattering ◽  
Broken Gap

Interface roughness scattering and its impact on electron transport in relaxed and strained Si n-MOSFETs

2004 ◽  
Vol 19 (4) ◽  
pp. S155-S157 ◽  
Author(s):  
M Boriçi ◽  
J R Watling ◽  
R C W Wilkins ◽  
L Yang ◽  
J R Barker ◽  
...  
Keyword(s):  
Electron Transport ◽  
Interface Roughness ◽  
Strained Si ◽  
Interface Roughness Scattering
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