interface roughness scattering
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Author(s):  
Thomas Grange ◽  
Samik Mukherjee ◽  
Giovanni Capellini ◽  
Michele Montanari ◽  
Luca Persichetti ◽  
...  

Author(s):  
Vurgaftman Igor

This chapter describes the most commonly used approaches for computing the band structure of active materials with intersubband optical transitions. The physics of quantum cascade lasers (QCLs) is discussed in detail, including the mechanisms that limit the threshold current density, threshold voltage, wall-plug efficiency, and temperature sensitivity of state-of-the-art devices. The important roles of phonon and interface roughness scattering in determining threshold are emphasized. The chapter also compares the performance of QCLs to other mid-IR lasers in considerable detail and makes some conclusions as to which sources are preferred depending on the emission wavelength and application. Finally, the physical principles of laser-based frequency combs, including self-starting frequency-modulated QCL combs, are discussed.


Photonics ◽  
2019 ◽  
Vol 6 (2) ◽  
pp. 38 ◽  
Author(s):  
Ngoc Tran ◽  
Giorgio Biasiol ◽  
Arnaud Jollivet ◽  
Alberto Bertocci ◽  
François Julien ◽  
...  

We report on the systematic study of two main scattering mechanisms on intersubband transitions, namely ionized impurity scattering and interface roughness scattering. The former mechanism has been investigated as a function of the dopants position within a multiple GaAs/AlGaAs quantum well structure and compared to the transition of an undoped sample. The study on the latter scattering mechanism has been conducted using the growth interruption technique. We report an improvement of the intersubband (ISB) transition linewidth up to 11% by interrupting growth at GaAs-on-AlGaAs interfaces. As a result, the lifetime of intersubband polaritons could be improved up to 9%. This leads to a reduction of 17% of the theoretical threshold intensity for polaritonic coherent emission. This work brings a useful contribution towards the realization of polariton-based devices.


2018 ◽  
Vol 113 (12) ◽  
pp. 121110 ◽  
Author(s):  
M. P. Semtsiv ◽  
S. S. Kurlov ◽  
D. Alcer ◽  
Y. Matsuoka ◽  
J.-F. Kischkat ◽  
...  

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