The characterization of Cu-doped ZnO thin films prepared by using radio-frequency reactive magnetron sputtering

2017 ◽  
Vol 70 (9) ◽  
pp. 856-860 ◽  
Author(s):  
Chaoqun Cai ◽  
Hongqiang Zhang ◽  
Jun Xie ◽  
Ligang Ma
2013 ◽  
Vol 274 ◽  
pp. 371-377 ◽  
Author(s):  
Chi Zhang ◽  
Xin-liang Chen ◽  
Xin-hua Geng ◽  
Cong-sheng Tian ◽  
Qian Huang ◽  
...  

2012 ◽  
Vol 61 (23) ◽  
pp. 238101
Author(s):  
Zhang Chi ◽  
Chen Xin-Liang ◽  
Wang Fei ◽  
Yan Cong-Bo ◽  
Huang Qian ◽  
...  

2007 ◽  
Vol 124-126 ◽  
pp. 999-1002 ◽  
Author(s):  
Han Na Cho ◽  
Jang Woo Lee ◽  
Su Ryun Min ◽  
Chee Won Chung

Indium zinc oxide (IZO) thin films were deposited on a glass substrate by radio frequency (rf) reactive magnetron sputtering method. As the rf power increased, the deposition rate and resistivity increased while the optical transmittance decreased owing to the increase of grain size. With increasing gas pressure, the resistivity increased and the transmittance decreased. Atomic force microscopy and scanning electron microscopy were employed to observe the film surface. The IZO films displayed a resistivity of 3.8 × 10-4 Ω cm and a transmittance of about 90% in visible region.


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