Characterization of the silicon oxide thin films deposited on polyethylene terephthalate substrates by radio frequency reactive magnetron sputtering

2007 ◽  
Vol 515 (11) ◽  
pp. 4596-4602 ◽  
Author(s):  
M.-C. Lin ◽  
C.-H. Tseng ◽  
L.-S. Chang ◽  
D.-S. Wuu
2019 ◽  
Vol 52 (49) ◽  
pp. 495201
Author(s):  
J Cruz ◽  
R Sanginés ◽  
N Abundiz-Cisneros ◽  
J Aguila-Muñoz ◽  
S Muhl ◽  
...  

2010 ◽  
Vol 8 (S1) ◽  
pp. 73-77 ◽  
Author(s):  
Stefan Jakobs Stefan Jakobs ◽  
Marc Lappschies Marc Lappschies ◽  
Uwe Schallenberg Uwe Schallenberg ◽  
Olaf Stenzel Olaf Stenzel ◽  
Steffen Wilbrandt Steffen Wilbrandt

2007 ◽  
Vol 124-126 ◽  
pp. 999-1002 ◽  
Author(s):  
Han Na Cho ◽  
Jang Woo Lee ◽  
Su Ryun Min ◽  
Chee Won Chung

Indium zinc oxide (IZO) thin films were deposited on a glass substrate by radio frequency (rf) reactive magnetron sputtering method. As the rf power increased, the deposition rate and resistivity increased while the optical transmittance decreased owing to the increase of grain size. With increasing gas pressure, the resistivity increased and the transmittance decreased. Atomic force microscopy and scanning electron microscopy were employed to observe the film surface. The IZO films displayed a resistivity of 3.8 × 10-4 Ω cm and a transmittance of about 90% in visible region.


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