Nano-Tech Electronic Applications

2021 ◽  
pp. 279-313
Keyword(s):  
Chemical Sensors ◽  
Patch Antenna ◽  
Thin Film Transistors ◽  
Light Emitting Diode ◽  
Microstrip Patch Antenna ◽  
Effective Parameters ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Spr Sensor

This chapter contains the theories and effective parameters for developing the electronic applications by using nanotechnology techniques. This chapter sheds light on developing characterization of surface plasmon resonance (SPR) sensor, organic light emitting diode (OLED), thin-film transistors (TFTs), compact microstrip patch antenna, semiconductors, resistive memories, memory ram, chemical sensors, biosensors, and super capacitors. Furthermore, this chapter contains the detailed literature of the effects of different types and concentrations of nanoparticles for developing characterization of electronic applications. Finally, this chapter draws attention to the recommendations for investment in electronic applications by using nanotechnology techniques.

Characteristics of thin film transistors fabricated employing various sequential lateral solidification poly-Si microstructures

2004 ◽  
Vol 19 (2) ◽  
pp. 481-487 ◽  
Author(s):  
Ji-Yong Park ◽  
Hye-Hyang Park ◽  
Ki-Yong Lee ◽  
Ho-Kyoon Chung
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Liquid Crystal Display ◽  
Light Emitting Diode ◽  
Superior Performance ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Average Value ◽  
Sequential Lateral Solidification ◽  
Device Properties

Sequential lateral solidification (SLS) is known to be a promising method to make low-temperature poly-Si thin film transistors (LTPS TFTs) with superior performance for fabrication of highly circuit-integrated flat panel displays such as TFT liquid crystal display and TFT organic light-emitting diode. The dependence of TFT characteristics on the details of the SLS poly-Si microstructures was studied by varying the size, direction, and shape of the grains by applying different SLS crystallization mask patterns and processing details. The TFTs results demonstrated that various device properties and characteristics are obtained depending on the specifics of the microstructures. Nearly direction-insensitive TFTs of mobility about 300 cm2/V·s (within 5% variation of average value) were successfully fabricated by controlling the microstructures. Such a characteristic is recognized as being desirable for an optimal integration of the peripheral circuits.

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