sequential lateral solidification
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Electrical Properties of Bottom Gate Poly-Si TFTs by NiSi2 Seed-Induced Lateral Crystallization and Its Applications

MRS Advances ◽  
2016 ◽  
Vol 1 (50) ◽  
pp. 3429-3433
Author(s):  
Sol Kyu Lee ◽  
Ki Hwan Seok ◽  
Zohreh Kiaee ◽  
Hyung Yoon Kim ◽  
Hee Jae Chae ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Polycrystalline Silicon ◽  
Subthreshold Slope ◽  
Laser Method ◽  
Investment Cost ◽  
Sequential Lateral Solidification ◽  
Amorphous Si ◽  
Lateral Crystallization ◽  
Bottom Gate ◽  
Steep Subthreshold Slope

ABSTRACT In this paper, the electrical properties of bottom-gate (BG) polycrystalline silicon (poly-Si) thin-film transistors (TFTs) by NiSi2 seed-induced lateral crystallization (SILC) and its applications are presented. Sequential lateral solidification (SLS), which is one of crystallization methods, is known to have poor electrical properties of TFTs with BG structures due to problems induced by laser. Therefore, the laser method cannot be used to well-developed production line of amorphous-Si (a-Si) TFT, resulting in large initial investment cost to change fabrication procedures. On the other hand, the BG poly-Si TFT by SILC (SILC-BGPS TFT) has basically compatible process flows with that of the a-Si TFT. The SILC-BGPS TFT exhibited threshold voltage of -3.9 V, steep subthreshold slope of 130 mV/dec, a high field-effect mobility of 129 cm2/Vs , and I on /I off ratio of ∼106.

Sequential Lateral Solidification of Silicon Thin Films on Cu BEOL-Integrated Wafers for Monolithic 3-D Integration

2015 ◽  
Vol 62 (11) ◽  
pp. 3887-3891 ◽  
Author(s):  
Fabio Carta ◽  
Stephen M. Gates ◽  
Alexander B. Limanov ◽  
James S. Im ◽  
Daniel C. Edelstein ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Thin Films ◽  
Sequential Lateral Solidification

Sequential lateral solidification of silicon thin films on low-k dielectrics for low temperature integration

2014 ◽  
Vol 105 (24) ◽  
pp. 242904 ◽  
Author(s):  
Fabio Carta ◽  
Stephen M. Gates ◽  
Alexander B. Limanov ◽  
Htay Hlaing ◽  
James S. Im ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Silicon Thin Films ◽  
Sequential Lateral Solidification ◽  
Low K

Effects of Grain Size in Sequential Lateral Solidification Processed on Active Matrix Organic Light Emitting Diode Displays

2014 ◽  
Vol 3 (8) ◽  
pp. R40-R43 ◽  
Author(s):  
K.-B. Kim ◽  
G. Jin ◽  
M. Kim ◽  
S. Kim ◽  
C.-W. Jeon
Keyword(s):  
Grain Size ◽  
Light Emitting Diode ◽  
Active Matrix ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Organic Light ◽  
Sequential Lateral Solidification

Simplified process for dot sequential lateral solidification of sputtered amorphous silicon thin films

2012 ◽  
Vol 84 ◽  
pp. 88-90 ◽  
Author(s):  
Chao Liu ◽  
Xiaojie Jia ◽  
Bin Ai ◽  
Chunyan Duan ◽  
Hui Shen
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Silicon Thin Films ◽  
Sequential Lateral Solidification

Electrical activation in boron doped polycrystalline Si formed by sequential lateral solidification

2011 ◽  
Vol 520 (1) ◽  
pp. 616-622 ◽  
Author(s):  
Won-Eui Hong ◽  
Deok Hoi Kim ◽  
Chi Woo Kim ◽  
Jae-Sang Ro
Keyword(s):  
Electrical Activation ◽  
Boron Doped ◽  
Sequential Lateral Solidification

P-type Tunneling Transistors with Poly-Si by Sequential Lateral Solidification (SLS) Growth Technique

2011 ◽  
Author(s):  
M. H. Lee ◽  
T. H. Wu ◽  
S. C. Weng
Keyword(s):  
Growth Technique ◽  
Sequential Lateral Solidification ◽  
P Type

Improved Uniformity of Sequential Lateral Solidification Thin-Film Transistors

2011 ◽  
Vol 32 (6) ◽  
pp. 767-769 ◽  
Author(s):  
Myung-Koo Kang ◽  
Si Joon Kim ◽  
Hyun Jae Kim
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Sequential Lateral Solidification
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