Nano-Order Structural Analysis of White Light-Emitting Silicon Oxide Prepared by Successive Thermal Carbonization/Oxidation of the Porous Silicon

2007 ◽  
pp. 1127-1130
Author(s):  
Shunsuke Muto ◽  
A.V. Vasin ◽  
Yukari Ishikawa ◽  
Noriyoshi Shibata ◽  
Jarno Salonen ◽  
...  
2007 ◽  
Vol 561-565 ◽  
pp. 1127-1130 ◽  
Author(s):  
Shunsuke Muto ◽  
A.V. Vasin ◽  
Yukari Ishikawa ◽  
Noriyoshi Shibata ◽  
Jarno Salonen ◽  
...  

Recently the present authors’ group found that porous silicon showed strong and stable white/white-blue light emission after successive thermal carbonization and oxidation by water vapor. This material can be considered as a price-competitive solid-state white-light source. We examined these layers by electron energy-loss spectroscopy (EELS), energy-filtering transmission electron microscopy (EFTEM). The EEL spectra indicated that the silicon skeleton in the porous layer was completely oxidized by the thermal treatment in wet argon ambient and multi-types of carbon phases were present in the 1073 K oxidized sample of stronger emission, while carbon complexes including Si and/or O were formed in the 1223 K oxidized sample of weaker light emission. EF-TEM images showed that carbon/oxygen were more uniformly distributed in the 1223 K oxidized sample. It is assumed that the strong light-emitting properties are controlled by the size and internal chemical bonding states of carbon clusters incorporated.


2008 ◽  
Vol 113 (2) ◽  
pp. 751-754 ◽  
Author(s):  
Guangxia Hu ◽  
Shi Qiang Li ◽  
Hao Gong ◽  
Yanlin Zhao ◽  
Jixuan Zhang ◽  
...  

1997 ◽  
Vol 486 ◽  
Author(s):  
L. Tsybeskov ◽  
G. F. Grom ◽  
K. D. Hirschman ◽  
H. A. Lopez ◽  
S. Chan ◽  
...  

AbstractPorous silicon (PSi) was doped by Er using electromigration from a solution and converted to Er-doped silicon-rich silicon oxide (SRSO:Er) by partial thermal oxidation at 600–950°C following densification at 1100°C in an inert atmosphere. Room-temperature photoluminescence (PL) at ∼1.5 μm is intense and decreases by less than 20% from 12 K to 300 K. The PL spectrum of SRSO:Er reveals no luminescence bands related to Si-bandedgerecombination, point defects or dislocations, and shows that the Er3+ centers are the most efficient radiative recombination centers. A light-emitting diode (LED) with an active layer made of SRSO:Er was manufactured using a pre-oxidation cleaning step to increase the quality of the interface between SRSO:Er and the top electrode. Room temperature electroluminescence at ∼1.5 μm was demonstrated.


2012 ◽  
Vol 1 (1) ◽  
pp. 76-80
Author(s):  
Zhongjie Ren ◽  
Rongben Zhang ◽  
Fengwen Yan ◽  
Shidong Jiang ◽  
Feng Wang ◽  
...  

2020 ◽  
Vol 8 (22) ◽  
pp. 2001037 ◽  
Author(s):  
Dongjie Liu ◽  
Xiaohan Yun ◽  
Guogang Li ◽  
Peipei Dang ◽  
Maxim S. Molokeev ◽  
...  

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