Nano-sized Light Emitting Structure through Silicon Oxide Pattern Process

2020 ◽  
Vol 4 (5) ◽  
pp. 495-500
Author(s):  
Je Won Kim ◽  
Keyword(s):  
Silicon Oxide ◽  
Light Emitting

Light Emission from Intrinsic and Doped Silicon-Rich Silicon Oxide: from the Visible to 1.6 ΜM

1996 ◽  
Vol 452 ◽  
Author(s):  
L. Tsybeskov ◽  
K. L. Moore ◽  
P. M. Fauchet ◽  
D. G. Hall
Keyword(s):  
Rare Earth ◽  
External Quantum Efficiency ◽  
Room Temperature ◽  
Structural Modification ◽  
Silicon Oxide ◽  
Light Emission ◽  
Crystalline Silicon ◽  
Light Emitting ◽  
Infra Red ◽  
Doped Silicon

AbstractSilicon-rich silicon oxide (SRSO) films were prepared by thermal oxidation (700°C-950°C) of electrochemically etched crystalline silicon (c-Si). The annealing-oxidation conditions are responsible for the chemical and structural modification of SRSO as well as for the intrinsic light-emission in the visible and near infra-red spectral regions (2.0–1.8 eV, 1.6 eV and 1.1 eV). The extrinsic photoluminescence (PL) is produced by doping (via electroplating or ion implantation) with rare-earth (R-E) ions (Nd at 1.06 μm, Er at 1.5 μm) and chalcogens (S at ∼1.6 μm). The impurities can be localized within the Si grains (S), in the SiO matrix (Nd, Er) or at the Si-SiO interface (Er). The Er-related PL in SRSO was studied in detail: the maximum PL external quantum efficiency (EQE) of 0.01–0.1% was found in samples annealed at 900°C in diluted oxygen (∼ 10% in N2). The integrated PL temperature dependence is weak from 12K to 300K. Light emitting diodes (LEDs) with an active layer made of an intrinsic and doped SRSO are manufactured and studied: room temperature electroluminescence (EL) from the visible to 1.6 μmhas been demonstrated.

Nano-Order Structural Analysis of White Light-Emitting Silicon Oxide Prepared by Successive Thermal Carbonization/Oxidation of the Porous Silicon

2007 ◽  
pp. 1127-1130
Author(s):  
Shunsuke Muto ◽  
A.V. Vasin ◽  
Yukari Ishikawa ◽  
Noriyoshi Shibata ◽  
Jarno Salonen ◽  
...  
Keyword(s):  
Structural Analysis ◽  
Porous Silicon ◽  
White Light ◽  
Silicon Oxide ◽  
Light Emitting

Effect of Various Treatments on Light Emission Properties of Si-Rich-SiOx Structures

2007 ◽  
Vol 131-133 ◽  
pp. 65-70 ◽  
Author(s):  
M. Baran ◽  
N. Korsunska ◽  
L. Khomenkova ◽  
T. Stara ◽  
V. Khomenkov ◽  
...  
Keyword(s):  
Spectral Range ◽  
Silicon Oxide ◽  
Light Emission ◽  
Annealing Treatment ◽  
Light Emitting ◽  
Emission Properties ◽  
Preparation Conditions ◽  
Infrared Spectral Range ◽  
Infrared Spectral ◽  
Oxide Defects

The effect of preparation conditions and annealing treatment on Si-rich-SiOx layers was investigated. It was observed that oxygen plays important role in the creation of light-emitting centres. It was found that the emission in the green-orange spectral range is connected with silicon oxide defects which contain dangling bonds. At the same time PL band in the infrared spectral range is caused by recombination of carriers in amorphous silicon or nanocrystalline one. It is shown that modification of defect content under various treatments gives the possibility to control the emission properties of the layers.

scholarly journals Deposition of Silicon-Based Stacked Layers for Flexible Encapsulation of Organic Light Emitting Diodes

Nanomaterials ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 1053 ◽  
Author(s):  
Chia-Hsun Hsu ◽  
Yang-Shih Lin ◽  
Hsin-Yu Wu ◽  
Xiao-Ying Zhang ◽  
Wan-Yu Wu ◽  
...  
Keyword(s):  
Residual Stress ◽  
Inductively Coupled Plasma ◽  
Light Emitting Diodes ◽  
Silicon Oxide ◽  
Transmission Rate ◽  
Chemical Vapor ◽  
Gas Diffusion ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Organic Light

In this study, inorganic silicon oxide (SiOx)/organic silicon (SiCxHy) stacked layers were deposited by a radio frequency inductively coupled plasma chemical vapor deposition system as a gas diffusion barrier for organic light-emitting diodes (OLEDs). The effects of thicknesses of SiOx and SiCxHy layers on the water vapor transmission rate (WVTR) and residual stress were investigated to evaluate the encapsulation capability. The experimental results showed that the lowest WVTR and residual stress were obtained when the thicknesses of SiOx and SiCxHy were 300 and 30 nm, respectively. Finally, different numbers of stacked pairs of SiOx/SiCxHy were applied to OLED encapsulation. The OLED encapsulated with the six-pair SiOx/SiCxHy exhibited a low turn-on voltage and low series resistance, and device lifetime increased from 7 h to more than 2000 h.

High performance multilayered nano-crystalline silicon/silicon-oxide light-emitting diodes on glass substrates

2011 ◽  
Vol 22 (37) ◽  
pp. 375204 ◽  
Author(s):  
S Darbari ◽  
M Shahmohammadi ◽  
M Mortazavi ◽  
S Mohajerzadeh ◽  
Y Abdi ◽  
...  
Keyword(s):  
High Performance ◽  
Light Emitting Diodes ◽  
Silicon Oxide ◽  
Crystalline Silicon ◽  
Light Emitting ◽  
Glass Substrates ◽  
Nano Crystalline ◽  
Silicon Silicon

Nano-Order Structural Analysis of White Light-Emitting Silicon Oxide Prepared by Successive Thermal Carbonization/Oxidation of the Porous Silicon

2007 ◽  
Vol 561-565 ◽  
pp. 1127-1130 ◽  
Author(s):  
Shunsuke Muto ◽  
A.V. Vasin ◽  
Yukari Ishikawa ◽  
Noriyoshi Shibata ◽  
Jarno Salonen ◽  
...  
Keyword(s):  
Porous Silicon ◽  
White Light ◽  
Silicon Oxide ◽  
Light Emission ◽  
Strong Light ◽  
Light Emitting ◽  
Energy Filtering ◽  
Transmission Electron ◽  
Oxidation By Water ◽  
Electron Energy Loss

Recently the present authors’ group found that porous silicon showed strong and stable white/white-blue light emission after successive thermal carbonization and oxidation by water vapor. This material can be considered as a price-competitive solid-state white-light source. We examined these layers by electron energy-loss spectroscopy (EELS), energy-filtering transmission electron microscopy (EFTEM). The EEL spectra indicated that the silicon skeleton in the porous layer was completely oxidized by the thermal treatment in wet argon ambient and multi-types of carbon phases were present in the 1073 K oxidized sample of stronger emission, while carbon complexes including Si and/or O were formed in the 1223 K oxidized sample of weaker light emission. EF-TEM images showed that carbon/oxygen were more uniformly distributed in the 1223 K oxidized sample. It is assumed that the strong light-emitting properties are controlled by the size and internal chemical bonding states of carbon clusters incorporated.

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