Effects of Rare-Earth Oxides on Dielectric Properties of X7R Ceramics for Base Metal Internal Electrode Capacitors

2007 ◽  
pp. 73-76
Author(s):  
Ren Zheng Chen ◽  
Xiao Hui Wang ◽  
Jian Ling Zhao ◽  
Jun Jie Hao ◽  
Zhi Lun Gui ◽  
...  
Keyword(s):  
Rare Earth ◽  
Dielectric Properties ◽  
Base Metal ◽  
Rare Earth Oxides ◽  
Internal Electrode

Effects of Rare-Earth Oxides on Dielectric Properties of X7R Ceramics for Base Metal Internal Electrode Capacitors

2007 ◽  
Vol 280-283 ◽  
pp. 73-76
Author(s):  
Ren Zheng Chen ◽  
Xiao Hui Wang ◽  
Jian Ling Zhao ◽  
Jun Jie Hao ◽  
Zhi Lun Gui ◽  
...  
Keyword(s):  
Rare Earth ◽  
Dielectric Properties ◽  
Base Metal ◽  
Xrd Analysis ◽  
Rare Earth Oxides ◽  
Dielectric Constants ◽  
Dielectric Losses ◽  
Internal Electrode ◽  
Ceramic Capacitor ◽  
Multilayer Ceramic

The effect of rare earth oxides (Y2O3 and Dy2O3) on the microstructure and electrical properties of the X7R-type ceramics for base metal internal electrode multilayer ceramic capacitor (BME-MLCC) was investigated. As the amount of Y increased, the dielectric constants and the dielectric losses increased, while the temperature coefficient of capacitors (TCC) curve rotated in counterclockwise direction. On the contrary, the dielectric constants decreased with Dy, and the TCC curve remained the same. The grain growth can be inhibited by the Dy2O3, concluded from XRD analysis. The different influences on dielectric properties between Y2O3 and Dy2O3 were discussed by defect chemistry. Y3+ acted as acceptor, performing B-site substitution, while Dy3+ showed the amphoteric behavior. By optimizing appropriate qualities of Y2O3 and Dy2O3, the most-compatible composition for BME X7R ceramics can be obtained.

Effects of rare earth oxides on dielectric properties of Y2Ti2O7 series ceramics

2010 ◽  
Vol 28 (5) ◽  
pp. 765-768 ◽  
Author(s):  
Jiayu DING ◽  
Yuan XIAO ◽  
Pengde HAN ◽  
Qitu ZHANG
Keyword(s):  
Rare Earth ◽  
Dielectric Properties ◽  
Rare Earth Oxides

scholarly journals An Experimental Investigation of the Dielectric Properties of Thermally Evaporated Rare Earth Oxides for Use in Thin Film Capacitors

1976 ◽  
Vol 3 (1) ◽  
pp. 51-62 ◽  
Author(s):  
A. T. Fromhold, Jr. ◽  
W. D. Foster
Keyword(s):  
Thin Film ◽  
Experimental Investigation ◽  
Rare Earth ◽  
Dielectric Properties ◽  
Dielectric Breakdown ◽  
Rare Earth Oxides ◽  
Dielectric Constants ◽  
Thin Film Capacitors ◽  
Aluminum Electrodes ◽  
Experimental Survey

An experimental survey of rare earth oxides for use in thin film capacitors has been completed. Dielectric properties measured at 300°K are reported for thermally evaporated oxides 300 to 6000 Å in thickness of the metals, La, Ce, Pr, Nd, Sm, Gd, Dy, Ho, Er, Yb, Y, Sc, and also, V. Thin evaporated aluminum electrodes were utilized to impress voltages in the range zero to 75 V across the oxide layers. Dielectric breakdown strengths in excess of 5 × 106V/cm were observed. Relative dielectric constants measured for the oxides range from two to twenty, and measured capacitances were as high as 156 × 10−9F/cm2. The oxides of Ce, La, Nd, Gd, Pr, and Er show the most promise as potential materials for use in thin film capacitors.

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