Optimization of Optical Wavelength Conversion in SOI Waveguide

2011 ◽  
Vol 110-116 ◽  
pp. 4498-4504
Author(s):  
Ashiq Hussain ◽  
Xin Zhu Sang ◽  
Chong Xiu Yu ◽  
Abid Muneer ◽  
Abdul Latif ◽  
...  

In this paper the wavelength conversion in a 1cm long silicon-on-insulator (SOI) waveguide has been investigated numerically. The wavelength conversion efficiency is optimized by analyzing free carriers absorption (FCA) loss generated by two-photon-absorption (TPA). The free carriers life time is focused while other factors influencing noise figure are also considered.

2011 ◽  
Vol 98 (19) ◽  
pp. 191103 ◽  
Author(s):  
S. Vidal ◽  
J. Degert ◽  
M. Tondusson ◽  
J. Oberlé ◽  
E. Freysz

2008 ◽  
Vol 93 (6) ◽  
pp. 061107 ◽  
Author(s):  
Liu Liu ◽  
Joris Van Campenhout ◽  
Günther Roelkens ◽  
Dries Van Thourhout ◽  
Pedro Rojo-Romeo ◽  
...  

2009 ◽  
Vol 45 (22) ◽  
pp. 1132 ◽  
Author(s):  
F. Gomez-Agis ◽  
O. Raz ◽  
S.J. Zhang ◽  
E. Tangdiongga ◽  
L. Zimmermann ◽  
...  

2017 ◽  
Vol 64 (18) ◽  
pp. 1809-1817 ◽  
Author(s):  
Chen Run ◽  
Jia Wei-Guo ◽  
Wang Xu-Ying ◽  
Zhang Jun-Ping ◽  
Men-Ke Neimule

1983 ◽  
Vol 13 ◽  
Author(s):  
Michael P. Hasselbeck ◽  
H. S. Kwok

ABSTRACTPulsed 10.6μm TEA CO2 laser light has been used to melt the semiconductors silicon and InSb. Measurements indicate that generation of free carriers necessary for melting may take place by nonlinear processes such as two-photon absorption or intraband avalanche ionization. If the semiconductor is sufficiently doped, melting may also result from linear free carrier absorption. In all cases, it appears that the molten depth exceeds several μm, which is much greater than obtained with lasers of shorter wavelength.


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