Surface Modification Induced by Femtosecond Laser Pulses in Lithium Niobate

The interaction between femtoseocnd laser and transparent materials has been studied intensively in recent years. When the femtosecond laser was focused onto the surface of the transparent materials, if the laser fluence applied to the sample exceeds the material’s fluence threshold, ablation occurs. In this paper, we study the surface ablation of lithium niobate by femtosecond laser. We produced a two-dimensional array of voids in the sample surface by varying the number of shots and laser energy, and analyze of the damage depth with the relation to the pulse energy and the number of the pulse. It has important reference on the microfabrication in such materials by femtosecond laser.

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Space-selective laser joining of dissimilar transparent materials using femtosecond laser pulses

Applied Physics Letters ◽

10.1063/1.2221393 ◽

2006 ◽

Vol 89 (2) ◽

pp. 021106 ◽

Cited By ~ 82

Author(s):

Wataru Watanabe ◽

Satoshi Onda ◽

Takayuki Tamaki ◽

Kazuyoshi Itoh ◽

Junji Nishii

Keyword(s):

Femtosecond Laser ◽

Laser Pulses ◽

Femtosecond Laser Pulses ◽

Laser Joining ◽

Transparent Materials

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Characterization of Electrical Contacts on Silicon (100) after Ablation and Sulfur Doping by Femtosecond Laser Pulses

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.205-206.358 ◽

2013 ◽

Vol 205-206 ◽

pp. 358-363 ◽

Cited By ~ 1

Author(s):

Philipp Saring ◽

Anna Lena Baumann ◽

Stefan Kontermann ◽

Wolfgang Schade ◽

Michael Seibt

Keyword(s):

Surface Roughness ◽

Femtosecond Laser ◽

Laser Pulses ◽

Sample Surface ◽

Femtosecond Laser Pulses ◽

Electrical Contacts ◽

Single Shot ◽

Excess Charge ◽

Silicon Sample ◽

Etching Depth

This paper investigates the influence of different number of laser pulses on contact behavior and conductivity of the surface layer of femtosecond laser microstructured, sulfur-doped silicon. Single shot laser processed silicon (Pink Silicon) is characterized by low surface roughness, whereas five shot laser processed silicon (Grey Silicon) has an elevated sulfur content with a surface roughness low enough to maintain good contacting. To laterally confine the laser induced pn-junction part of the Grey Silicon sample surface is etched off. The etching depth is confirmed to be sufficient to completely remove the active n-type sulfur layer. While Pink Silicon shows little or no lateral conductivity within the laser processed layer, Grey Silicon offers acceptable conductivity, just as expected by the fact of having incorporated a higher sulfur dopant content. Recombination dominates the irradiated regions of Pink Silicon and suppresses excess charge carrier collection. Grey Silicon, while showing sufficient lateral conductivity, still shows regions of lower conductivity, most likely dominated by the laser irradiation-induced formation of dislocations. According to our results, the optimum laser pulse number for electrical and structural properties is expected to be in the range between one and five laser pulses.

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