Studies on Electron Spin Relaxation in AlGaAs/GaAs Multi Quantum Wells

2011 ◽  
Vol 143-144 ◽  
pp. 216-219
Author(s):  
Yu Wu
Keyword(s):  
Quantum Wells ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Carrier Density ◽  
Relaxation Mechanism ◽  
Electron Spin Polarization ◽  
Time Resolved ◽  
Pump Probe ◽  
Electron Spin Relaxation ◽  
Probe Spectroscopy

Time-resolved circularly polarized pump-probe spectroscopy is used to study the carrier density dependence of the electron spin polarization dynamics in AlGaAs/GaAs multi quantum wells at room temperature. Experimental results show that the spin relaxation time increases with the carrier density, which is in conformity with D'yakonov-Perel relaxation mechanism.

Electron Spin Relaxation in Semiconductor Quantum Wells

2012 ◽  
Vol 424-425 ◽  
pp. 155-158
Author(s):  
Yu Wu ◽  
Qian Shou
Keyword(s):  
Relaxation Time ◽  
Quantum Wells ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Carrier Density ◽  
Relaxation Mechanism ◽  
Spin Relaxation Time ◽  
Multiple Quantum ◽  
Pump Probe ◽  
Electron Spin Relaxation

The dependence of electron spin relaxation on the carrier density are investigated based on the D’yakonov-Perel relaxation mechanism. Experimental results obtained by using femtosecond pump-probe technique in AlGaAs/GaAs multiple quantum wells at room temperature show that the spin relaxation time increases from 58 to 82ps at carrier density of 1×1017 to 1×1018cm－3 consistent with the theoretical prediction. This result reveals that with the increment of the carrier density, the spin orbit interaction reduces due to the more frequent momentum scattering and the spin relaxation time prolongs

Carrier-Density-Dependent Electron Spin Relaxation in GaAs/AlGaAs Multi Quantum Wells

2005 ◽  
Vol 22 (9) ◽  
pp. 2320-2323 ◽  
Author(s):  
Shou Qian ◽  
Wu Yu ◽  
Liu Lu-Ning ◽  
Wen Jin-Hui ◽  
Lai Tian-Shu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Carrier Density ◽  
Electron Spin Relaxation ◽  
Density Dependent

Control of the electron spin relaxation by the built-in piezoelectric field in InGaAs quantum wells

2016 ◽  
Vol 108 (8) ◽  
pp. 082103 ◽  
Author(s):  
S. Azaizia ◽  
A. Balocchi ◽  
H. Carrère ◽  
P. Renucci ◽  
T. Amand ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Electron Spin Relaxation ◽  
Piezoelectric Field

Tuning of the Electron Spin Relaxation Anisotropy via Optical Gating in GaAs/AlGaAs Quantum Wells

2016 ◽  
Vol 33 (10) ◽  
pp. 107802
Author(s):  
Bing-Hui Niu ◽  
Teng-Fei Yan ◽  
Hai-Qiao Ni ◽  
Zhi-Chuan Niu ◽  
Xin-Hui Zhang
Keyword(s):  
Quantum Wells ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Electron Spin Relaxation ◽  
Optical Gating

scholarly journals Electron spin relaxation and momentum relaxation in semiconductor quantum wells

2006 ◽  
Vol 55 (6) ◽  
pp. 2961
Author(s):  
Wu Yu ◽  
Jiao Zhong-Xing ◽  
Lei Liang ◽  
Wen Jin-Hui ◽  
Lai Tian-Shu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Electron Spin Relaxation ◽  
Semiconductor Quantum Wells ◽  
Momentum Relaxation

Electrical control of the electron spin relaxation in (In)GaAs-based quantum wells

2016 ◽  
Author(s):  
Andrea Balocchi ◽  
Sawsen Azaizia ◽  
Helene Carrere ◽  
Thierry Amand ◽  
Alexandre Arnoult ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Electron Spin Relaxation ◽  
Electrical Control

Room temperature electron spin relaxation in GaInNAs multiple quantum wells at 1.3μm

2006 ◽  
Vol 89 (21) ◽  
pp. 211122 ◽  
Author(s):  
C. Reith ◽  
S. J. White ◽  
M. Mazilu ◽  
A. Miller ◽  
J. Konttinen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Room Temperature ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Electron Spin Relaxation ◽  
Temperature Electron
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