Binding Energy of Donor Impurity in a Rectangular Semiconductor GaAs Quantum Dot with Electric Field

2014 ◽  
Vol 687-691 ◽  
pp. 3407-3410
Author(s):  
Kang Yun ◽  
Sheng Wang ◽  
Xian Li Li
Keyword(s):  
Binding Energy ◽  
Quantum Dot ◽  
Electric Field ◽  
Potential Model ◽  
Binding Energies ◽  
Zero Field ◽  
Donor Impurity ◽  
One Dimensional ◽  
Mass Approximation ◽  
Gaas Quantum Dot

Within the quasi-one-dimensional effective potential model and effective mass approximation, we calculate the ground and the first few excited state binding energies of a donor impurity in a rectangular quantum dot (RQD) in the presence of electric field. We discuss detailedly dependence of the binding energies on the impurity positions. The results show that the binding energy is the largest when the impurity is located at the center of RQD with zero field and is lowest when the impurity is located at the corner of the RQD. The peak strengths and positions of the probability density in RQD appear to be the critical control on such impurity-induced dependence. We believe our results can provide an indication for design of some photoelectric devices constructed based on GaAs RQD structures.

First-excited-state energy of hydrogenic impurity bound polaron in an anisotropic quantum dot in an electric field

2019 ◽  
Vol 33 (32) ◽  
pp. 1950386
Author(s):  
Shi-Hua Chen
Keyword(s):  
Excited State ◽  
Binding Energy ◽  
Quantum Dot ◽  
Electric Field ◽  
Binding Energies ◽  
Hydrogenic Impurity ◽  
Bound Polaron ◽  
First Excited State ◽  
Trial Wavefunction ◽  
Anisotropic Quantum Dot

The first-excited-state (ES) binding energy of hydrogenic impurity bound polaron in an anisotropic quantum dot (QD) is obtained by constructing a variational wavefunction under the action of a uniform external electric field. As for a comparison, the ground-state (GS) binding energy of the system is also included. We apply numerical calculations to KBr QD with stronger electron–phonon (E–P) interaction in which the new variational wavefunction is adopted. We analyzed specifically the effects of electric field and the effects of both the position of the impurity and confinement lengths in the xy-plane and the [Formula: see text] direction on the ground and the first-ES binding energies (BEs). The results show that the selected trial wavefunction in the ES is appropriate and effective for the current research system.

OPTICAL INTERSUBBAND TRANSITIONS AND BINDING ENERGIES OF DONOR IMPURITIES IN Ga1-xInxNyAs1-y/GaAs/Al0.3Ga0.7As QUANTUM WELL UNDER THE ELECTRIC FIELD

2012 ◽  
Vol 26 (06) ◽  
pp. 1250013 ◽  
Author(s):  
F. UNGAN ◽  
U. YESILGUL ◽  
E. KASAPOGLU ◽  
H. SARI ◽  
I. SOKMEN
Keyword(s):  
Binding Energy ◽  
Optical Absorption ◽  
Electric Field ◽  
Quantum Well ◽  
Applied Electric Field ◽  
Shallow Donor ◽  
Binding Energies ◽  
Intersubband Transitions ◽  
Mass Approximation ◽  
Intersubband Optical Absorption

The effects of nitrogen and indium mole concentration on the intersubband optical absorption for (1–2) transition and the binding energy of the shallow-donor impurities in a Ga 1-x In x N y As 1-y/ GaAs / Al 0.3 Ga 0.7 As quantum well under the electric field is theoretically calculated within the framework of the effective-mass approximation. Results are obtained for several concentrations of nitrogen and indium, and the applied electric field. The numerical results show that the intersubband transitions and the impurity binding energy strongly depend on the nitrogen and indium concentrations.

Influence of Al Composition on Donor Impurity States in Self-Formed GaAs-AlxGa1-xAs Quantum Rings

2013 ◽  
Vol 380-384 ◽  
pp. 4284-4289
Author(s):  
Guang Xin Wang ◽  
Xiu Zhi Duan
Keyword(s):  
Binding Energy ◽  
Electric Field ◽  
Growth Direction ◽  
Uniform Electric Field ◽  
Donor Impurity ◽  
Impurity States ◽  
Quantum Rings ◽  
Mass Approximation ◽  
Donor Binding Energy ◽  
Special Value

Based on the the effective mass approximation and variational approach, the donor impurity states confined in self-formed GaAs/AlxGa1-xAs quantum rings (QRs) are investigated theoretically. A uniform electric field is applied along the growth direction of the QR. The different effective masses in the different regions of the GaAs/AlxGa1-xAs QR are taken into consideration. Numerical results show that the binding energy of a donor impurity increases gradually, reaches a maximum value, and then decreases quickly to the special value as the QR height decreases. Given a fixed QR size, the binding energy increases for the impurity located at the center of the QR when the Al composition increases. In addition, it can also be found that when the applied electric field strength increases, the donor binding energy increases for impurities localized at the negative z axis of the QR; however, the donor binding energy decreases slightly for impurities located at the center and positive z axis of the QR.

Stark effect of donor binding energy in a self-assembled GaAs quantum dot subjected to a tilted electric field

2012 ◽  
Vol 376 (42-43) ◽  
pp. 2712-2716 ◽  
Author(s):  
Zaiping Zeng ◽  
Christos S. Garoufalis ◽  
Sotirios Baskoutas ◽  
Andreas F. Terzis
Keyword(s):  
Binding Energy ◽  
Quantum Dot ◽  
Electric Field ◽  
Stark Effect ◽  
Donor Binding Energy ◽  
Self Assembled ◽  
Gaas Quantum Dot

THE EFFECTS OF QUANTUM CONFINEMENT ON THE BINDING ENERGY OF HYDROGENIC IMPURITIES IN A SPHERICAL QUANTUM DOT

2006 ◽  
Vol 20 (18) ◽  
pp. 1127-1134 ◽  
Author(s):  
A. JOHN PETER
Keyword(s):  
Binding Energy ◽  
Quantum Dot ◽  
Shallow Donor ◽  
Donor Impurity ◽  
Hydrogenic Impurity ◽  
Spherical Quantum Dot ◽  
Impurity Position ◽  
Mass Approximation ◽  
Donor Binding Energy ◽  
Parabolic Confinement

The binding energy of a shallow hydrogenic impurity of a spherical quantum dot confined by harmonic oscillator-like and by rectangular well-like potentials, using a variational procedure within the effective mass approximation, has been determined. The calculations of the binding energy of the donor impurity as a function of the system geometry, and the donor impurity position have been investigated. The binding energy of shallow donor impurity depends not only on the quantum confinements but also on the impurity position. Our results reveal that (i) the donor binding energy decreases as the dot size increases irrespective of the impurity position, and (ii) the binding energy values of rectangular confinement are larger than the values of parabolic confinement and (iii) the rectangular confinement is better than the parabolic confinement in a spherical quantum dot.

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