Electrical Characterization of Inductively Coupled Plasma Reactor Excited by RF (13.56MHz)

2011 ◽  
Vol 227 ◽  
pp. 185-188 ◽  
Author(s):  
Mohamed Mounis Alim ◽  
Mourad Zekara ◽  
Laid Henni ◽  
Rabah Tadjine ◽  
Karim Henda

In the surface treatment by plasma, the saturation ion current is the macroscopic parameter which can give us information on the ionic density in plasma. For this, we followed the evolution of the saturation ion current versus the pressure and power. Our experimental setup consists of spherical plasma reactor linked with inductively source argon plasma and probe to measure ionic current. The obtained experimental results enabled us to highlight the effect of pressure and power on saturation ion current. We found in this study that the saturation ion current increases with pressure and presents an optimum depending on the power.

2000 ◽  
Vol 76 (18) ◽  
pp. 2508-2510
Author(s):  
Joachim Walewski ◽  
Jussi Larjo ◽  
Rolf Hernberg

2002 ◽  
Vol 91 (9) ◽  
pp. 6027-6033 ◽  
Author(s):  
Lance Delzeit ◽  
Ian McAninch ◽  
Brett A. Cruden ◽  
David Hash ◽  
Bin Chen ◽  
...  

AIChE Journal ◽  
2014 ◽  
Vol 60 (10) ◽  
pp. 3647-3664 ◽  
Author(s):  
Sangeeta B. Punjabi ◽  
Sunil N. Sahasrabudhe ◽  
S. Ghorui ◽  
A. K. Das ◽  
Narendra K. Joshi ◽  
...  

2010 ◽  
Vol 1249 ◽  
Author(s):  
George Andrew Antonelli ◽  
Gengwei Jiang ◽  
Mandyam Sriram ◽  
Kaushik Chattopadhyay ◽  
Wei Guo ◽  
...  

AbstractOrganosilicate materials with dielectric constants (k) ranging from 3.0 to 2.2 are in production or under development for use as interlayer dielectric materials in advanced interconnect logic technology. The dielectric constant of these materials is lowered through the addition of porosity which lowers the film density, making the patterning of these materials difficult. The etching kinetics and surface roughening of a series of low-k dielectric materials with varying porosity and composition were investigated as a function of ion beam angle in a 7% C4F8/Ar chemistry in an inductively-coupled plasma reactor. A similar set of low-k samples were patterned in a single damascene scheme. With a basic understanding of the etching process, we will show that it is possible to proactively design a low-k material that is optimized for a given patterning. A case study will be used to illustrate this point.


2018 ◽  
Vol 47 (9) ◽  
pp. 4964-4969 ◽  
Author(s):  
Jean-Pierre Landesman ◽  
Daniel T. Cassidy ◽  
Marc Fouchier ◽  
Erwine Pargon ◽  
Christophe Levallois ◽  
...  

2002 ◽  
Vol 20 (1) ◽  
pp. 43-52 ◽  
Author(s):  
Saurabh J. Ullal ◽  
Anna R. Godfrey ◽  
Erik Edelberg ◽  
Linda Braly ◽  
Vahid Vahedi ◽  
...  

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