Electrical Characteristics and Microstructures of Eu2O3-Doped Bi4Ti3O12 Thin Films
Keyword(s):
Eu2O3-doped bismuth titanate (Bi4-xEuxTi3O12: BET) thin films with random oriention were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the structures and ferroelectric properties of the films were investigated. XRD studies indicated that all of BET films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization ( Pr ) and coercive field (Ec) of the BET Film with x=0.8 were 20μC/cm2 and 65KV/cm , respectively. After 3×1010 switching cycles, 15% degradation of Pr is observed in the film.
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