The Research on Designing a Scale Ship Model Based on Cathode Protection

2012 ◽  
Vol 548 ◽  
pp. 607-611 ◽  
Author(s):  
Yi Liu ◽  
Dou Ji ◽  
Xiang Jun Wang

Cathode protection is a common ship electric protection method, a large number of researchers studies cathode protection by making appropriate ship models and then applied to the actual ship. However, the design and production of ship model will directly affect the results of the study. In this paper, firstly analysis the similarity theory from the perspective of cathode protection, then propose the considerations when designing a ship model according to the analysis results and finally gives a electric field distribution characteristics when a finished ship models doing cathode protection. From the results, this paper consider the cathode protection, proposed the design factors for producing a good performance scale ship model.

2021 ◽  
Vol 7 ◽  
pp. 110-117
Author(s):  
Yunfei Shi ◽  
Gengsheng Xie ◽  
Qingyu Wang ◽  
Xiukun Li ◽  
Xi Yang ◽  
...  

Author(s):  
Н.М. Лебедева ◽  
Н.Д. Ильинская ◽  
П.А. Иванов

Abstract The prospects for the protection of high-voltage 4 H -SiC-devices from edge breakdown via the formation of mesa structures with inclined walls (negative beveling) are considered. Numerical simulation of the spatial electric-field distribution in high-voltage (~1500V) reverse-biased mesa-epitaxial p ^+– p – n _0– n ^+ 4 H -SiC diodes is performed. It is shown that negative beveling with small angles of less than 10° from the plane of the p – n _0 junction makes it possible to reduce severalfold the surface edge electric field as compared to that in the bulk. A combined protection method is suggested as the edge-termination technique for 4 H -SiC diodes with a p ^+– n _0– n ^+ structure, Schottky diodes with an n _0 blocking base, and bipolar n ^+– p – n _0 transistors via the implantation of boron along with negative beveling. The possibility of fabricating mesa structures with inclined walls via the photolithography and dry etching of silicon carbide is briefly discussed.


2012 ◽  
Vol 24 (3) ◽  
pp. 602-606 ◽  
Author(s):  
刘隆晨 Liu Longchen ◽  
张乔根 Zhang Qiaogen ◽  
刘轩东 Liu Xuandong ◽  
童歆 Tong Xin ◽  
王喆 Wang Zhe

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