UV Sensitive Indium Gallium Zinc Oxide MOS- FET Fabricated by RF Magnetron Sputtering Method
Transparent indium gallium zinc oxide (IGZO) thin film was fabricated on SiO2/Si substrate by radio-frequency magnetron sputtering method. The IGZO thin film was characterized by X-ray diffraction, UV-VIS spectrometer, X-ray photoelectron energy spectrum to determine its optical, structural properties and binding energy information. The IGZO thin film was employed to construct metal-oxide-semiconductor field effect transistors (MOS-FET), which showed an on/off current of about 103. When the device was illuminated by UV light, the drain-to-source current was increased by 15 folders at -5 V gate voltages. The result indicates that the IGZO MOS-FET is sensitive to UV light.
2012 ◽
Vol 33
(10)
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pp. 1149-1152
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2013 ◽
Vol 52
(3S)
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pp. 03BB03
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2015 ◽
Vol 15
(6)
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pp. 675-678
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2010 ◽
Vol 49
(8)
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pp. 08JF02
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2015 ◽
Vol 135
(6)
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pp. 192-198
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2011 ◽
Vol 50
(3)
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pp. 03CB06
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