Zinc Oxide Films and Nanowires Synthesized by Sol-Gel and Hydrothermal Methods and their Applications

2013 ◽  
Vol 815 ◽  
pp. 752-757
Author(s):  
Wei Wei ◽  
Chun Fu Zhang ◽  
Da Zheng Chen ◽  
Rui Gao ◽  
Zhi Zhe Wang

In this paper, we studied the methods to synthesize good ZnO materials that can be applied in real environment. First we used spin coating method to form a layer of sol-gel driven ZnO, and then a hydrothermal method was used to synthesize nanowires of ZnO on the already obtained ZnO films. Some methods of test, including AFM and SEM, were performed to analyze the different characteristics of the material. Finally, their applications in the fields of TFT and solar cell were studied. We find that the ZnO films and nanowires are good in quality and their applications in TFT and solar cell are satisfactory.

2013 ◽  
Vol 284-287 ◽  
pp. 347-351 ◽  
Author(s):  
Kai Loong Foo ◽  
Muhammad Kashif ◽  
Uda Hashim

This In this work, zinc oxide film was deposited onto the SiO2/Si substrate with low-cost sol-gel spin coating method. Zinc oxide thin film was deposited on the silver interdigit elctrodes for the pH measurement. The surface morphology and microstructures of the deposited zinc oxide films were analyzed by field emission scanning electron microscope (FESEM) and atomic force microscope (AFM). Whereas the crystallinity and structure of the zinc oxide films were determined by X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR). The measurement at various pH values, which were ±1 above and below of the neutral pH had been conducted with a real time dielectric analyzer measurement. It was observed that the increase in pH would decrease the capacitance of the device.


2010 ◽  
Vol 104 (1) ◽  
pp. 263-268 ◽  
Author(s):  
Sharul Ashikin Kamaruddin ◽  
Kah-Yoong Chan ◽  
Ho-Kwang Yow ◽  
Mohd Zainizan Sahdan ◽  
Hashim Saim ◽  
...  

2000 ◽  
Vol 372 (1-2) ◽  
pp. 30-36 ◽  
Author(s):  
Y Natsume ◽  
H Sakata

2013 ◽  
Vol 8 (1) ◽  
pp. 306 ◽  
Author(s):  
Kuo-Min Huang ◽  
Chong-Lung Ho ◽  
Heng-Jui Chang ◽  
Meng-Chyi Wu

2014 ◽  
Vol 492 ◽  
pp. 341-345
Author(s):  
Soumyadeep Sinha ◽  
Shaibal K. Sarkar

Zinc Oxide (ZnO) films were deposited by Atomic Layer Deposition (ALD) using Diethylzinc and a combination of Water and Ozone as the precursores. Electrical conductivity of ALD grown ZnO films, under low field, were studied with varied partial pressure of the constituent reactants. Supressing the oxygen vacancy by introducing O3 during the reaction increase the resistivity of the films by couple of orders of magnitude. UV-Vis spectroscopy measurement showed the films to be transparent giving a room for its application as a TCO in solar cell.


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