Influence of Lithography Distortion due to Metal Fill on CA

2014 ◽  
Vol 900 ◽  
pp. 651-655
Author(s):  
Xiao Ming Chen ◽  
Ke Qin Wang ◽  
Song Song Li
Keyword(s):  
Circuit Design ◽  
Integrated Circuit ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Critical Area ◽  
Integrated Circuit Design ◽  
Technology Node ◽  
Design And Manufacturing ◽  
The Future

In the process of integrated circuit design and manufacturing, dummy metal fill can improve the planarity of layout after Chemical Mechanical Polishing (CMP). However, it will also cause lithography distortion and Critical Area (CA) variation. This paper compares and analyzes the influences of lithography distortion due to metal fill on CA from the perspectives of different defect particles based on 45nm technology node. The results indicate that dummy metal fill can increase open CA after lithography and the defect particle with the diameter of 0.066um leads to the largest increment percentage of open CA, which will take up almost 10%. This paper is instructive in researching dummy metal fill and CA or related fields in the future.

A Case Study of Defects Due to Process-Design Interaction in Nano Scale Technology

2007 ◽  
Author(s):  
Hung-Sung Lin ◽  
Ying-Chin Hou ◽  
Juimei Fu ◽  
Mong-Sheng Wu ◽  
Vincent Huang ◽  
...  
Keyword(s):  
Liquid Crystal ◽  
Circuit Design ◽  
Process Design ◽  
Integrated Circuit ◽  
Photon Emission ◽  
Integrated Circuit Design ◽  
Nano Scale ◽  
Leakage Path ◽  
Related Defect

Abstract The difficulties in identifying the precise defect location and real leakage path is increasing as the integrated circuit design and process have become more and more complicated in nano scale technology node. Most of the defects causing chip leakage are detectable with only one of the FA (Failure Analysis) tools such as LCD (Liquid Crystal Detection) or PEM (Photon Emission Microscope). However, due to marginality of process-design interaction some defects are often not detectable with only one FA tool [1][2]. This paper present an example of an abnormal power consumption process-design interaction related defect which could only be detected with more advanced FA tools.

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