Radiation-Induced Defect Formation in Ternary Ge-As-S Vitreous Semiconductors

2004 ◽  
Vol 230-232 ◽  
pp. 67-80 ◽  
Author(s):  
R.Ya. Golovchak ◽  
Oleg I. Shpotyuk
Keyword(s):  
Optical Properties ◽  
Positron Annihilation ◽  
Chemical Bond ◽  
Defect Formation ◽  
Topological Defect ◽  
Positron Annihilation Lifetime Spectroscopy ◽  
Mathematical Statistics ◽  
Positron Annihilation Lifetime ◽  
Radiation Induced ◽  
Using Data

A mechanism of g-induced (Co60 g-quanta of 1.25 MeV mean energy) changes in optical properties of ternary As-Ge-S chalcogenide vitreous semiconductors is analysed. It is connected with chemical bond re-switching accompanied by coordination topological defect formation. The origin of these defects for As-Ge-S system is discussed using data of positron annihilation lifetime spectroscopy, IR Fourier reflection measurements and mathematical statistics.

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