3D-Simulation of Void Formation, Growth and Migration under Electromigration

2005 ◽  
Vol 237-240 ◽  
pp. 1306-1311
Author(s):  
T.V. Zaporozhets ◽  
I.V. Sobchenko ◽  
Andriy Gusak

The 3D Monte Carlo scheme is proposed for simulation of simultaneous self-consistent current redistribution, surface diffusion, drift and void migration and coalescence at the interface metal/dielectric. Results of simulation as well as simple phenomenological model demonstrate a possibility of trapping at and migration along the grainboundaries (GBs). Critical size of “detrapping” after coalescence has been estimated.

2008 ◽  
Vol 7 (3) ◽  
pp. 201-204 ◽  
Author(s):  
M. Aldegunde ◽  
A. J. García-Loureiro ◽  
A. Martinez ◽  
K. Kalna

2012 ◽  
Vol 11 (03) ◽  
pp. 1242006 ◽  
Author(s):  
VINCENT TALBO ◽  
DAMIEN QUERLIOZ ◽  
SYLVIE RETAILLEAU ◽  
PHILIPPE DOLLFUS

The 3D Monte Carlo simulation of an Si dot-based double-tunnel junction shows not only the possibility of shot noise suppression down to the Fano factor of 0.5, but also of super-Poissonian noise. The counting statistics of the tunneling events provides a clear interpretation of the different noise regimes according to the balance between the different tunneling rates involved.


2015 ◽  
Vol 6 (12) ◽  
pp. 4859 ◽  
Author(s):  
Yuming Liu ◽  
Steven L. Jacques ◽  
Mehdi Azimipour ◽  
Jeremy D. Rogers ◽  
Ramin Pashaie ◽  
...  

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