Vacancy-Mediated Diffusion and Diffusion-Controlled Processes in Ordered Binary Intermetallics by Kinetic Monte Carlo Simulations

2021 ◽  
Vol 29 ◽  
pp. 95-115
Author(s):  
Rafal Kozubski ◽  
Graeme E. Murch ◽  
Irina V. Belova

We review the results of our Monte Carlo simulation studies carried out within the past two decades in the area of atomic-migration-controlled phenomena in intermetallic compounds. The review aims at showing the high potential of Monte Carlo methods in modelling both the equilibrium states of the systems and the kinetics of the running processes. We focus on three particular problems: (i) the atomistic origin of the complexity of the ‘order-order’ relaxations in γ’-Ni3Al; (ii) surface-induced ordering phenomena in γ-FePt and (iii) ‘order—order’ kinetics and self-diffusion in the ‘triple-defect’ β-NiAl. The latter investigation demonstrated how diverse Monte Carlo techniques may be used to model the phenomena where equilibrium thermodynamics interplays and competes with kinetic effects.

2012 ◽  
Vol 1397 ◽  
Author(s):  
Seungchul Kim ◽  
Michael Rutenberg Schoenberg ◽  
Andrew M. Rappe

ABSTRACTUsing ab-initio calculations and kinetic Monte Carlo simulations, we demonstrate that the deposition geometries of palladium are strongly dependent on the polarization direction of the LiNbO3 substrate. Different stoichiometries and atomic structures of the positively and the negatively polarized substrates cause substantially different bonding configurations of palladium and energy barriers for the movement of Pd clusters. Our simulations predict that palladium atoms form bulky clusters on the positive surface, while they are deposited in a dispersed or planar manner on the negative surface at moderate temperature. We suggest that Inoue and coworkers’ observation [J. Phys. Chem.88, 1148 (1984)] that the catalytic activity of palladium depends on polarization direction of LiNbO3 substrate is, at least in part, due to differences in the geometric structures of palladium and the LiNbO3 surface.


2000 ◽  
Vol 648 ◽  
Author(s):  
Takahisa Ohno ◽  
Jun Nara ◽  
Takahide Ezaki

AbstractThe Ge adsorption and diffusion processes on the monohydride terminated Si(001) surface are investigated by using first-principles total-energy calculations and kinetic Monte Carlo simulations. We find that the adsorbed Ge atoms tend to exchange sites with substrate Si dimer atoms. The site exchange plays an important role, which provides the most stable geometry and the easiest diffusion pathway. The Ge adatom migrates in the subsurface region instead of on the surface. The temporal variation in the adsorption geometry during diffusion is found. The Si atoms can become the surface diffusion species instead of the Ge atoms, as a result of the site exchange.


2011 ◽  
Vol 2 ◽  
pp. 40-46 ◽  
Author(s):  
Michael Müller ◽  
Karsten Albe

The ordering kinetics in free and supported L10 nanoparticles was studied by means of lattice-based kinetic Monte-Carlo simulations. Starting from a fully disordered particle of Wulff shape, the simulations show that the nucleation of ordered domains is starting quickly on various (100) facets but is retarded in the particle volume due to the lack of vacancies compared with a thin film geometry. If a substrate is present, we do not find significant differences in the ordering behavior. This holds true, even if we impose a massively increased thermodynamic driving force for interface segregation, because the nucleation of ordered domains on free facets is significantly faster than the bulk diffusion of the segregating species to the interface. In cases where wetting of the substrate or surface facetting occurs, we find that diffusional atomic motion on the surface goes along with an enhanced long-range order.


2004 ◽  
Vol 18 (17n19) ◽  
pp. 2766-2770
Author(s):  
GUOCE ZHUANG

Based on the vacancy-assisted diffusion mechanism, the impure atomic moving processes on the close-packed layer of a Cu (001) surface are studied by kinetic Monte Carlo simulations. Our simulation results show that the diffusivity of the Indium atom agrees quite well with the exact lattice solution. In addition, it is found that in the case of muti-impure atoms, there exist a critical point near the value of ∊=0, and the diffusivity of In atom depends on the number of impure atoms only when ∊ is positive.


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