Electrical Properties and Microstructures of Tb4O7-Doped Bi4Ti3O12 Ceramics

2012 ◽  
Vol 512-515 ◽  
pp. 1329-1332
Author(s):  
X.A. Mei ◽  
M. Chen ◽  
R.F. Liu ◽  
Chong Qing Huang ◽  
J. Liu
Keyword(s):  
Electrical Properties ◽  
Grain Boundary ◽  
Bismuth Titanate ◽  
Impedance Spectrum ◽  
Layered Perovskite ◽  
Ohmic Behavior ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve ◽  
Layered Perovskite Structure

The electrical properties of Tb4O7-bismuth titanate (Bi3.3Tb0.6Ti3O12) prepared by a conventional ceramic technique have been investigated. At applied d.c. field below 200V/mm, the current-voltage curve of Tb-doped sample exhibits a simple ohmic behavior. The impedance spectrum of Tb-doped sample indicates that consist of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi4Ti3O12 and the distribution of every element is uniform. Tb-doped sample exhibit randomly oriented and plate-like morphology.

Electrical Characteristics and Microstructures of Dy-Doped Bi4Ti3O12 Ceramics

2011 ◽  
Vol 412 ◽  
pp. 322-325
Author(s):  
X.A. Mei ◽  
Min Chen ◽  
R.F. Liu ◽  
Y.H. Sun ◽  
J. Liu
Keyword(s):  
Electrical Properties ◽  
Bismuth Titanate ◽  
Impedance Spectrum ◽  
Layered Perovskite ◽  
Electrical Characteristics ◽  
Ohmic Behavior ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve ◽  
Layered Perovskite Structure

The electrical properties of Dy-bismuth titanate (Bi4-xDyxTi3O12) prepared by a conventional ceramic technique have been investigated. At applied d.c. field below 200V/mm, the current-voltage curve of Dy-doped sample exhibits a simple ohmic behavior. The impedance spectrum of Dy-doped sample indicates that consist of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi4Ti3O12and the distribution of every element is uniform. Dy-doped sample exhibit randomly oriented and plate-like morphology.

Electrical Characterization and Microstructures of Bi4-x HoxTi3O12 Ceramics

2013 ◽  
Vol 833 ◽  
pp. 13-16
Author(s):  
X.A. Mei ◽  
Min Chen ◽  
J. Liu ◽  
R.F. Liu
Keyword(s):  
Electrical Properties ◽  
Bismuth Titanate ◽  
Electrical Characterization ◽  
Impedance Spectrum ◽  
Layered Perovskite ◽  
Ohmic Behavior ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve ◽  
Layered Perovskite Structure

The electrical properties of Ho2O3-bismuth titanate (Bi4-xHoxTi3O12) prepared by a conventional ceramic technique have been investigated. At applied d.c. field below 200V/mm, the current-voltage curve of Ho-doped sample exhibits a simple ohmic behavior. The impedance spectrum of Ho-doped sample indicates that consist of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi4Ti3O12 and the distribution of every element is uniform. Ho-doped sample exhibit randomly oriented and plate-like morphology.

Electrical Characteristics and Impedance Spectra of Gd2O3-Doped Bi4Ti3O12 Ceramics

2012 ◽  
Vol 624 ◽  
pp. 182-185 ◽  
Author(s):  
X.B. Liu ◽  
X.A. Mei ◽  
C.Q. Huang ◽  
J. Liu
Keyword(s):  
Bismuth Titanate ◽  
Impedance Spectrum ◽  
Layered Perovskite ◽  
Impedance Spectra ◽  
Electrical Characteristics ◽  
Ohmic Behavior ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve ◽  
Layered Perovskite Structure

The electrical properties of Gd2O3-bismuth titanate (Bi4-xGdxTi3O12) prepared by a conventional ceramic technique have been investigated. At applied d.c. field below 200V/mm, the current-voltage curve of Gd-doped sample exhibits a simple ohmic behavior. The impedance spectrum of Gd-doped sample indicates that consist of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi4Ti3O12 and the distribution of every element is uniform. Gd-doped sample exhibit randomly oriented and plate-like morphology.

Electrical Characteristics and Microstructures of (Gd, Dy)-Doped Bi4Ti3O12 Ceramics

2008 ◽  
Vol 368-372 ◽  
pp. 88-90
Author(s):  
Y.H. Cai ◽  
X.A. Mei ◽  
Min Chen ◽  
K.L. Su ◽  
W.K. An ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Impedance Spectrum ◽  
Differential Resistance ◽  
Layered Perovskite ◽  
Electrical Characteristics ◽  
Ohmic Behavior ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve ◽  
Layered Perovskite Structure

The electrical properties of Bi3.25Dy0.75Ti3O12 (BDT) and Bi3.25Gd0.75Ti3O12 (BGT) ceramics were investigated. The current-voltage curve of the BGT sample exhibits a negative differential resistance behavior, whereas that of the BDT sample exhibits a simple ohmic behavior. The impedance spectrum of the BDT and BGT samples indicate that both consist of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi4Ti3O12 and the distribution of every element is uniform. Both BDT and BGT samples exhibit randomly oriented and plate-like morphology.

Electrical Characteristics and Microstructures of Pr6O11-Doped Bi4Ti3O12 Ceramics

2012 ◽  
Vol 512-515 ◽  
pp. 1313-1316
Author(s):  
Min Chen ◽  
X.A. Mei ◽  
R.F. Liu ◽  
Chong Qing Huang ◽  
J. Liu
Keyword(s):  
Electrical Properties ◽  
Negative Differential Resistance ◽  
Impedance Spectrum ◽  
Differential Resistance ◽  
Layered Perovskite ◽  
Electrical Characteristics ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve ◽  
Layered Perovskite Structure

The electrical properties of Pr6O11-doped bismuth titanates (BixPryTi3O12, BPT) ceramics prepared by a conventional ceramic technique have been investigated. At applied d.c. field below 200V/mm, the current-voltage curve of Pr-doped samples exhibit negative differential resistance behavior. The conducting filamentary model has been used to explain the negative differential resistance phenomenon in Pr-doped bismuth titanates. The impedance spectrum indicates that Pr-doped sample consists of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi4Ti3O12 and the distribution of every element is uniform. Pr-doped samples exhibit randomly oriented and plate-like morphology.

Electrical Characteristics and Microstructures of Gd-Doped Bi4Ti3O12 Ceramics

2011 ◽  
Vol 412 ◽  
pp. 314-317
Author(s):  
J. Liu ◽  
Min Chen ◽  
X.A. Mei ◽  
Y.H. Sun ◽  
Chong Qing Huang
Keyword(s):  
Electrical Properties ◽  
Negative Differential Resistance ◽  
Impedance Spectrum ◽  
Differential Resistance ◽  
Layered Perovskite ◽  
Electrical Characteristics ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve ◽  
Layered Perovskite Structure

The electrical properties of Gd-doped bismuth titanates Bi4-xGdxTi3O12) prepared by a conventional ceramic technique have been investigated. At applied d.c. field below 200V/mm, the current-voltage curve of Gd-doped sample exhibits a negative differential resistance behavior. The conducting filamentary model has been used to explain the negative differential resistance phenomenon in Gd-doped bismuth titanates. The impedance spectrum of Gd sample indicates that both consist of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi4Ti3O12and the distribution of every element is uniform. Gd-doped sample exhibites randomly oriented and plate-like morphology.

Electrical Characteristics and Microstructures of Gd-Doped Bi4Ti3O12 Ceramics

2007 ◽  
Vol 336-338 ◽  
pp. 149-151
Author(s):  
X.B. Liu ◽  
Y.H. Sun ◽  
Min Chen ◽  
Chong Qing Huang ◽  
J. Liu ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Negative Differential Resistance ◽  
Impedance Spectrum ◽  
Differential Resistance ◽  
Layered Perovskite ◽  
Electrical Characteristics ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve ◽  
Layered Perovskite Structure

The electrical properties of Gd-doped bismuth titanates (Bi3.25Gd0.75Ti3O12, BGT) prepared by a conventional ceramic technique have been investigated. At applied d.c. field below 200V/mm, the current-voltage curve of the BGT ceramic exhibits a negative differential resistance behavior. The impedance spectrum indicates that the sample consists of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi4Ti3O12 (BIT) and the distribution of every element is uniform. The BGT sample exhibits randomly oriented and plate-like morphology.

Fusion of Large Unilamellar Liposomes Containing Hemocyanin with Planar Bilayer Membranes

1984 ◽  
Vol 39 (1-2) ◽  
pp. 147-155 ◽  
Author(s):  
Flavia Pasquali ◽  
Gianfranco Menestrina ◽  
Renzo Antolini
Keyword(s):  
Electrical Properties ◽  
Ionic Channels ◽  
Planar Bilayer ◽  
Artificial Membrane ◽  
Bilayer Membranes ◽  
Large Unilamellar Vesicles ◽  
Strong Current ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve

Abstract Large unilamellar vesicles were prepared by detergent removal from micelles containing phosphatidylcholine, phosphatidylethanolam ine and phosphatidylserine. Liposomes were then interacted with Megathura crenulata hemocyanin, a well studied channel former. Incubation of the resulting proteoliposomes on one side of a phosphatidylserine-containing planar bilayer under fusion conditions yielded strong current increases. Such increase is due to insertion of ionic channels from the liposomes into the planar bilayer. Studying the effects of Ba2+ on the electrical properties of the channel we could show that the protein is always inserted into a bilayer during this process, i.e. fusion of proteoliposomes with the artificial membrane occurs. The strong non linearity of the current-voltage curve of the hemocyanin pore could be used as a probe of the extent to which fusion preserves the orientation of the channel through the bilayer.

Effect of Tb Substitution on Electrical Characteristics and Microstructures of Bismuth Titanate Ceramics

2008 ◽  
Vol 368-372 ◽  
pp. 95-97
Author(s):  
Min Chen ◽  
W.K. An ◽  
A.H. Cai ◽  
Chong Qing Huang ◽  
K.L. Su ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Coercive Field ◽  
Perovskite Structure ◽  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Layered Perovskite ◽  
Electrical Characteristics ◽  
Sem Micrographs ◽  
Layered Perovskite Structure ◽  
Titanate Ceramics

The electrical properties and Microstructures of Tb-doped bismuth titanate (Bi3.3Tb0.6Ti3O12) ceramic were investigated. XRD analyses revealed that the sample had Bi-layered perovskite structure. SEM micrographs showed randomly oriented and plate-like morphology. The remanent polarization (Pr) and coercive field (Ec) of Bi3.3Tb0.6Ti3O12 ceramic are above 25 μC/cm2 and 80 KV/cm, respectively.

Preparation and Electrical Characteristics of Bi4-xYbxTi3O12 Ceramics

2013 ◽  
Vol 591 ◽  
pp. 212-215 ◽  
Author(s):  
Chong Qing Huang ◽  
J. Liu ◽  
M. Chen ◽  
X.A. Mei
Keyword(s):  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Hysteresis Loops ◽  
Differential Resistance ◽  
Layered Perovskite ◽  
Electrical Characteristics ◽  
Current Voltage ◽  
Layered Perovskite Structure ◽  
Current Voltage Characteristics ◽  
Large Leakage Current

The electrical properties of Yb-doped bismuth titanate,Bi4-xYbxTi3O12 (BYbT) ceramics prepared by a conventional electroceramic technique were investigated. XRD analyses revealed Bi-layered perovskite structure in all samples. SEM micrographs showed randomly oriented and plate-like morphology. For the samples with x=0.25 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.5 and 0.75 the current-voltage characteristics showed simple ohmic behaviors and their P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BYbT ceramic with x=0.75 were above 16μC/cm2 and 75KV/cm , respectively.

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