Electrical Characteristics and Microstructures of Gd-Doped Bi4Ti3O12 Ceramics

2007 ◽  
Vol 336-338 ◽  
pp. 149-151
Author(s):  
X.B. Liu ◽  
Y.H. Sun ◽  
Min Chen ◽  
Chong Qing Huang ◽  
J. Liu ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Negative Differential Resistance ◽  
Impedance Spectrum ◽  
Differential Resistance ◽  
Layered Perovskite ◽  
Electrical Characteristics ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve ◽  
Layered Perovskite Structure

The electrical properties of Gd-doped bismuth titanates (Bi3.25Gd0.75Ti3O12, BGT) prepared by a conventional ceramic technique have been investigated. At applied d.c. field below 200V/mm, the current-voltage curve of the BGT ceramic exhibits a negative differential resistance behavior. The impedance spectrum indicates that the sample consists of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi4Ti3O12 (BIT) and the distribution of every element is uniform. The BGT sample exhibits randomly oriented and plate-like morphology.

Electrical Characteristics and Microstructures of Pr6O11-Doped Bi4Ti3O12 Ceramics

2012 ◽  
Vol 512-515 ◽  
pp. 1313-1316
Author(s):  
Min Chen ◽  
X.A. Mei ◽  
R.F. Liu ◽  
Chong Qing Huang ◽  
J. Liu
Keyword(s):  
Electrical Properties ◽  
Negative Differential Resistance ◽  
Impedance Spectrum ◽  
Differential Resistance ◽  
Layered Perovskite ◽  
Electrical Characteristics ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve ◽  
Layered Perovskite Structure

The electrical properties of Pr6O11-doped bismuth titanates (BixPryTi3O12, BPT) ceramics prepared by a conventional ceramic technique have been investigated. At applied d.c. field below 200V/mm, the current-voltage curve of Pr-doped samples exhibit negative differential resistance behavior. The conducting filamentary model has been used to explain the negative differential resistance phenomenon in Pr-doped bismuth titanates. The impedance spectrum indicates that Pr-doped sample consists of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi4Ti3O12 and the distribution of every element is uniform. Pr-doped samples exhibit randomly oriented and plate-like morphology.

Electrical Characteristics and Microstructures of Gd-Doped Bi4Ti3O12 Ceramics

2011 ◽  
Vol 412 ◽  
pp. 314-317
Author(s):  
J. Liu ◽  
Min Chen ◽  
X.A. Mei ◽  
Y.H. Sun ◽  
Chong Qing Huang
Keyword(s):  
Electrical Properties ◽  
Negative Differential Resistance ◽  
Impedance Spectrum ◽  
Differential Resistance ◽  
Layered Perovskite ◽  
Electrical Characteristics ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve ◽  
Layered Perovskite Structure

The electrical properties of Gd-doped bismuth titanates Bi4-xGdxTi3O12) prepared by a conventional ceramic technique have been investigated. At applied d.c. field below 200V/mm, the current-voltage curve of Gd-doped sample exhibits a negative differential resistance behavior. The conducting filamentary model has been used to explain the negative differential resistance phenomenon in Gd-doped bismuth titanates. The impedance spectrum of Gd sample indicates that both consist of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi4Ti3O12and the distribution of every element is uniform. Gd-doped sample exhibites randomly oriented and plate-like morphology.

Electrical Characteristics and Microstructures of (Gd, Dy)-Doped Bi4Ti3O12 Ceramics

2008 ◽  
Vol 368-372 ◽  
pp. 88-90
Author(s):  
Y.H. Cai ◽  
X.A. Mei ◽  
Min Chen ◽  
K.L. Su ◽  
W.K. An ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Impedance Spectrum ◽  
Differential Resistance ◽  
Layered Perovskite ◽  
Electrical Characteristics ◽  
Ohmic Behavior ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve ◽  
Layered Perovskite Structure

The electrical properties of Bi3.25Dy0.75Ti3O12 (BDT) and Bi3.25Gd0.75Ti3O12 (BGT) ceramics were investigated. The current-voltage curve of the BGT sample exhibits a negative differential resistance behavior, whereas that of the BDT sample exhibits a simple ohmic behavior. The impedance spectrum of the BDT and BGT samples indicate that both consist of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi4Ti3O12 and the distribution of every element is uniform. Both BDT and BGT samples exhibit randomly oriented and plate-like morphology.

Electrical Characteristics and Microstructures of Dy-Doped Bi4Ti3O12 Ceramics

2011 ◽  
Vol 412 ◽  
pp. 322-325
Author(s):  
X.A. Mei ◽  
Min Chen ◽  
R.F. Liu ◽  
Y.H. Sun ◽  
J. Liu
Keyword(s):  
Electrical Properties ◽  
Bismuth Titanate ◽  
Impedance Spectrum ◽  
Layered Perovskite ◽  
Electrical Characteristics ◽  
Ohmic Behavior ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve ◽  
Layered Perovskite Structure

The electrical properties of Dy-bismuth titanate (Bi4-xDyxTi3O12) prepared by a conventional ceramic technique have been investigated. At applied d.c. field below 200V/mm, the current-voltage curve of Dy-doped sample exhibits a simple ohmic behavior. The impedance spectrum of Dy-doped sample indicates that consist of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi4Ti3O12and the distribution of every element is uniform. Dy-doped sample exhibit randomly oriented and plate-like morphology.

Electrical Properties and Microstructures of Tb4O7-Doped Bi4Ti3O12 Ceramics

2012 ◽  
Vol 512-515 ◽  
pp. 1329-1332
Author(s):  
X.A. Mei ◽  
M. Chen ◽  
R.F. Liu ◽  
Chong Qing Huang ◽  
J. Liu
Keyword(s):  
Electrical Properties ◽  
Grain Boundary ◽  
Bismuth Titanate ◽  
Impedance Spectrum ◽  
Layered Perovskite ◽  
Ohmic Behavior ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve ◽  
Layered Perovskite Structure

The electrical properties of Tb4O7-bismuth titanate (Bi3.3Tb0.6Ti3O12) prepared by a conventional ceramic technique have been investigated. At applied d.c. field below 200V/mm, the current-voltage curve of Tb-doped sample exhibits a simple ohmic behavior. The impedance spectrum of Tb-doped sample indicates that consist of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi4Ti3O12 and the distribution of every element is uniform. Tb-doped sample exhibit randomly oriented and plate-like morphology.

Electrical Characteristics and Impedance Spectra of Gd2O3-Doped Bi4Ti3O12 Ceramics

2012 ◽  
Vol 624 ◽  
pp. 182-185 ◽  
Author(s):  
X.B. Liu ◽  
X.A. Mei ◽  
C.Q. Huang ◽  
J. Liu
Keyword(s):  
Bismuth Titanate ◽  
Impedance Spectrum ◽  
Layered Perovskite ◽  
Impedance Spectra ◽  
Electrical Characteristics ◽  
Ohmic Behavior ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve ◽  
Layered Perovskite Structure

The electrical properties of Gd2O3-bismuth titanate (Bi4-xGdxTi3O12) prepared by a conventional ceramic technique have been investigated. At applied d.c. field below 200V/mm, the current-voltage curve of Gd-doped sample exhibits a simple ohmic behavior. The impedance spectrum of Gd-doped sample indicates that consist of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi4Ti3O12 and the distribution of every element is uniform. Gd-doped sample exhibit randomly oriented and plate-like morphology.

Electrical Characterization and Microstructures of Bi4-x HoxTi3O12 Ceramics

2013 ◽  
Vol 833 ◽  
pp. 13-16
Author(s):  
X.A. Mei ◽  
Min Chen ◽  
J. Liu ◽  
R.F. Liu
Keyword(s):  
Electrical Properties ◽  
Bismuth Titanate ◽  
Electrical Characterization ◽  
Impedance Spectrum ◽  
Layered Perovskite ◽  
Ohmic Behavior ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve ◽  
Layered Perovskite Structure

The electrical properties of Ho2O3-bismuth titanate (Bi4-xHoxTi3O12) prepared by a conventional ceramic technique have been investigated. At applied d.c. field below 200V/mm, the current-voltage curve of Ho-doped sample exhibits a simple ohmic behavior. The impedance spectrum of Ho-doped sample indicates that consist of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi4Ti3O12 and the distribution of every element is uniform. Ho-doped sample exhibit randomly oriented and plate-like morphology.

Preparation and Electrical Characteristics of Bi4-xYbxTi3O12 Ceramics

2013 ◽  
Vol 591 ◽  
pp. 212-215 ◽  
Author(s):  
Chong Qing Huang ◽  
J. Liu ◽  
M. Chen ◽  
X.A. Mei
Keyword(s):  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Hysteresis Loops ◽  
Differential Resistance ◽  
Layered Perovskite ◽  
Electrical Characteristics ◽  
Current Voltage ◽  
Layered Perovskite Structure ◽  
Current Voltage Characteristics ◽  
Large Leakage Current

The electrical properties of Yb-doped bismuth titanate,Bi4-xYbxTi3O12 (BYbT) ceramics prepared by a conventional electroceramic technique were investigated. XRD analyses revealed Bi-layered perovskite structure in all samples. SEM micrographs showed randomly oriented and plate-like morphology. For the samples with x=0.25 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.5 and 0.75 the current-voltage characteristics showed simple ohmic behaviors and their P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BYbT ceramic with x=0.75 were above 16μC/cm2 and 75KV/cm , respectively.

Current-Voltage and Ferroelectric Characteristics of Er2O3-Doped Bi4Ti3O12 Ceramics

2012 ◽  
Vol 624 ◽  
pp. 162-165
Author(s):  
C.Q. Huang ◽  
X.B. Liu ◽  
X.A. Mei ◽  
J. Liu
Keyword(s):  
Negative Differential Resistance ◽  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Hysteresis Loops ◽  
Differential Resistance ◽  
Layered Perovskite ◽  
Current Voltage ◽  
Layered Perovskite Structure ◽  
Current Voltage Characteristics ◽  
Large Leakage Current

The electrical properties of Er2O3-doped bismuth titanate，Bi4-xErxTi3O12 (BET) ceramics prepared by a conventional electroceramic technique were investigated. XRD analyses revealed Bi-layered perovskite structure in all samples. SEM micrographs showed randomly oriented and plate-like morphology. For the samples with x=0.4 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-E hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.6 and 0.8 the current-voltage characteristics showed simple ohmic behaviors and their P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BET ceramic with x=0.8 were above 20μC/cm2 and 65KV/cm , respectively.

scholarly journals Electrical characteristics of silicon differential photoreceivers

2021 ◽  
Vol 2052 (1) ◽  
pp. 012014
Author(s):  
V V Gavrushko ◽  
A S Ionov ◽  
O R Kadriev ◽  
V A Lastkin
Keyword(s):  
Differential Resistance ◽  
Implantation Dose ◽  
Electrical Characteristics ◽  
Similar Shape ◽  
Voltage Curve ◽  
Current Voltage ◽  
Reverse Branch ◽  
Current Voltage Curve ◽  
Surface Leakage ◽  
Additional Channel

Abstract The volt-ampere curve of silicon differential photodiodes were measured. It was found that the current-voltage curve of the photodiodes of the main and additional channels had a similar shape, without revealing a significant dependence on the implantation dose of the additional channel. The main parameters of the equivalent circuits of photodiodes are determined. In the reverse branch, the dominant impact was exerted by the surface leakage conductivity with a differential resistance of about 10 GΩ. Measurements from minus 60 °C to 60 °C showed that when using amplifiers with an input impedance of about 103 Ω, differential photoreceivers can be successfully used as selective short-wavelength and two-color ones.

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