Variable Range Hopping Resistivity in La2-xSrxCuO4 Nanoparticles Evaluated by Four Point Probe Method

2020 ◽  
Vol 860 ◽  
pp. 142-147
Author(s):  
Suci Winarsih ◽  
Faisal Budiman ◽  
Hirofumi Tanaka ◽  
Tadashi Adachi ◽  
Takayuki Goto ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Thermal Activation ◽  
Resistivity Measurement ◽  
Probe Method ◽  
Charge Carriers ◽  
High Resistivity ◽  
Variable Range Hopping ◽  
Variable Range ◽  
Hopping Model ◽  
Variable Range Hopping Model

We report the results of the resistivity measurement on La2-xSrxCuO4 nanoparticles with x = 0, 0.05, and 0.20 evaluated by the four-point probe method. The high resistivity value shows the predominance of the inter-grain part. The temperature dependence of the conductivity can be analyzed by variable range hopping model showing the charge carriers are formed by thermal activation. There is no superconducting behavior that could be observed in La2-xSrxCuO4 nanoparticles with x = 0.05 and 0.20.

VARIABLE RANGE HOPPING IN OXYGEN DEFICIENT YBa2Cu3Ox

1988 ◽  
Vol 02 (06) ◽  
pp. 1381-1386
Author(s):  
S. N. BHATIA ◽  
R. WALIA
Keyword(s):  
Thermoelectric Power ◽  
Variable Range Hopping ◽  
Variable Range ◽  
Hopping Model ◽  
Variable Range Hopping Model ◽  
Good Agreement

Our measurement of the resistivity and thermoelectric power from 20–300 K in the oxygen deficient YBa 2 Cu 3 O x annealed at 700, 800 and 850°C show good agreement with Mott's variable range hopping model below ~ 100 K.

Application of Variable Range Hopping Model to a Granular Carbon

2011 ◽  
Author(s):  
A. Aparecido-Ferreira ◽  
G. M. Ribeiro ◽  
E. S. Alves ◽  
J. F. Sampaio ◽  
Jisoon Ihm ◽  
...  
Keyword(s):  
Variable Range Hopping ◽  
Variable Range ◽  
Hopping Model ◽  
Variable Range Hopping Model

Influence of Mn Site Substitution on Electrical Resistivity and Magnetoresistance Properties of Rare Earth Manganite

2014 ◽  
Vol 1047 ◽  
pp. 123-129 ◽  
Author(s):  
Tejas M. Tank ◽  
D. Bhargava ◽  
V. Sridharan ◽  
S.S. Samatham ◽  
V. Ganesan ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Low Temperature ◽  
Charge Carriers ◽  
Variable Range Hopping ◽  
Density Of State ◽  
Spin Dependent Scattering ◽  
Hopping Model ◽  
Variable Range Hopping Model ◽  
Sn Substitution ◽  
Localization Of Charge Carriers

We investigate the effects of Cr, Ru and Sn substitution on electrical resistivity and magnetoresistance property of polycrystalline samples La0.67Sr0.33Mn1-xBxO3(x = 0, 0.05; B= Ru, Cr and Sn) compounds. The value of M-I transition temperature (TP) decreases while resistivity increases with Cr, Ru and Sn substitution, moreover, the largest low-temperature magnetoresistance (MR %) is found at magnetic field dependent (Isotherm), which suggest that the spin-dependent scattering from internal grain regions is also responsible for the low-temperature MR %. Resistivity data have been fitted with the variable range hopping model to estimate the density of state at Fermi level. It was observed that the substitution of various transition metals in the Mn-site leads to a decrease in conductivity of the doped manganite samples, with conduction being controlled by the disorder induced localization of charge carriers.

Application of Variable Range Hopping Model to a Granular Carbon

2011 ◽  
Author(s):  
A. Aparecido-Ferreira ◽  
G. M. Ribeiro ◽  
E. S. Alves ◽  
J. F. Sampaio ◽  
Jisoon Ihm ◽  
...  
Keyword(s):  
Variable Range Hopping ◽  
Variable Range ◽  
Hopping Model ◽  
Variable Range Hopping Model

Investigation of Charge Transport in Amorphous Ge2Sb2Te5 Using the Variable-Range Hopping Model

2009 ◽  
Author(s):  
Enrico Piccinini ◽  
Fabrizio Buscemi ◽  
Thierry Tsafack ◽  
Massimo Rudan ◽  
Rossella Brunetti ◽  
...  
Keyword(s):  
Charge Transport ◽  
Variable Range Hopping ◽  
Variable Range ◽  
Hopping Model ◽  
Variable Range Hopping Model

Growth and Characterization of Low Temperature InP by Gas Source MBE

1991 ◽  
Vol 241 ◽  
Author(s):  
G. N. Maracas ◽  
K. T. Shiralagi ◽  
R. A. Puechner ◽  
F. Yu ◽  
K. T. Choi ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Deep Level ◽  
Level Structure ◽  
Buffer Layers ◽  
High Resistivity ◽  
Variable Range Hopping ◽  
Variable Range ◽  
Gas Source ◽  
Gas Source Mbe ◽  
Lt Gaas

The introduction of GaAs grown at low MBE growth temperatures has spurred considerable activity in attempts to understand conduction mechanisms and optical properties. In LT GaAs, the formation of microscopic As precipitates dominates the conductivity, producing electronic transport mainly by variable range hopping conduction. The resulting high resistivity and short carrier lifetimes have enabled the use of LT GaAs in FET buffer layers as well as in ultra-fast optical switches. An extension to AlInAs has also been performed and it was seen that variable range hopping is also present in the Asbased ternary.We report the optical and electronic properties of InP grown at low temperatures in a gas source MBE using dimeric phosphorus produced from cracked phosphine. The conductivity is higher than the equivalent GaAs LT material and does not have the same temperature dependence. The conditions under which growth occurs ie, substrate temperatures, V/ill ratios and annealing is explored. The structural properties, temperature dependence of the conductivity, deep level structure and the photoluminescence properties of the material are also investigated.

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