Facile Synthesis of 1T-MoS2 Nanoflowers Using Hydrothermal Method

2021 ◽  
Vol 1028 ◽  
pp. 173-178
Author(s):  
Ananta Rizki Fareza ◽  
Ferry Anggoro Ardy Nugroho ◽  
Vivi Fauzia

Molybdenum disulfide (MoS2) is one of the promising 2D materials thanks to its outstanding physicochemical properties and therefore is predicted to play a key role in optoelectronics devices and energy applications. MoS2 exhibits three phases with distinctive crystal structure depending on its stacking order: 1T (metallic), 2H (semiconducting), and 3R (semiconducting). Among all of them, 1T-MoS2 has become the center of interest due to its e.g., high catalytic activity. However, most of the methods to obtain 1T-MoS2 are complex and costly, for example strain engineering, electron beam treatment, and plasmonic hot electron injection. As response, we here demonstrate a facile and cost-efficient hydrothermal route at 200 °C to synthesize MoS2 with high content of 1T phase. MoS2-200 °C nanoflowers has an average diameter of 2.96 µm with the S/Mo atomic ratio of 1.50 and the band gap of 1.39 eV. It has an additional diffraction peak at 2θ = 9.22o, indicating the transformation of semiconducting 2H into metallic 1T. Higher concentration of 1T phase in MoS2-200 °C is also indicated by high intensity of the E1g Raman peak.

2020 ◽  
Vol 131 (3) ◽  
pp. 456-459
Author(s):  
S. S. Abukari ◽  
R. Musah ◽  
M. Amekpewu ◽  
S. Y. Mensah ◽  
N. G. Mensah ◽  
...  

1983 ◽  
Vol 19 (17) ◽  
pp. 697 ◽  
Author(s):  
K. Tomizawa ◽  
Y. Awano ◽  
N. Hashizume ◽  
M. Kawashima

1988 ◽  
Vol 27 (Part 2, No. 12) ◽  
pp. L2395-L2397 ◽  
Author(s):  
Naoki Yasuda ◽  
Hiroshi Nakamura ◽  
Kenji Taniguchi ◽  
Chihiro Hamaguchi ◽  
Masakazu Kakumu

2007 ◽  
Vol 131-133 ◽  
pp. 595-600
Author(s):  
S. Prucnal ◽  
L. Rebohle ◽  
Wolfgang Skorupa

The temperature quenching mechanisms of the electroluminescence (EL) and the reactivation of the rare earth luminescent centres by the flash lamp annealing (FLA) made after hot electron injection into the SiO2 layer implanted by Tb and Gd was investigated. An increase of the temperature from room temperature up to 150oC reduces the gate voltage of about 3 V and increases the rate of the EL quenching process and the degradation of the Metal-Oxide-Silicon Light Emitting Diode (MOSLED) structure by a of factor of three. On the other hand, the post-injection FLA reactivates the RE centres switched off by electrons trapped around them during hot electron impact excitation, increasing the operating time of the MOSLEDs devices.


2008 ◽  
Vol 52 (6) ◽  
pp. 844-848 ◽  
Author(s):  
Seung-Hwan Seo ◽  
Se-Woon Kim ◽  
Jang-Uk Lee ◽  
Gu-Cheol Kang ◽  
Kang-Seob Roh ◽  
...  

2021 ◽  
Author(s):  
Weixue Yang ◽  
Fei Li ◽  
Huali Liu ◽  
Zhen Li ◽  
Jiaqi Zhao ◽  
...  

A photo-assisted Li−Oxygen (Li−O2) battery with Au/SnO2 (ASO) hybrid nanotubes as cathode and photocatalyst has been prepared. The localized surface plasmon resonance (LSPR) excitation of gold nanoparticles (Au NPs) can...


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