The Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350°C and 500°C

Intensities of infrared absorption due to asymmetric stretching vibrations of interstitial oxygen atoms in Ge crystals enriched with 16O and 18O isotopes have been compared with oxygen concentrations determined by means of secondary ion mass spectrometry (SIMS). For Ge samples with oxygen content less than 5⋅1017 cm-3 a good correlation has been found between the values of oxygen concentration and values of absorption coefficient in maximum of the absorption band at 855.6 cm-1 with a proportionality coefficient CO = 0.95.1017 сm-2. It is argued that kinetics of oxygen-related thermal double donor formation and oxygen loss upon heat-treatments of Ge crystals at 350 оС cannot be described properly with the application of calibration coefficient CO = 5.1016 cm-2, which is widely used for the determination of oxygen concentration in Ge crystals.

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Models of Oxygen Loss and Thermal Donor Formation in Silicon by the Clustering of Rapidly Diffusing Oxygen Dimers

Materials Science Forum ◽

10.4028/www.scientific.net/msf.196-201.1309 ◽

1995 ◽

Vol 196-201 ◽

pp. 1309-1314 ◽

Cited By ~ 4

Author(s):

S.A. McQuaid ◽

R.C. Newman ◽

Elias Muñoz Merino

Keyword(s):

Oxygen Loss ◽

Thermal Donor ◽

Donor Formation

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On the Kinetics of Oxygen Clustering and Thermal Donor Formation in Czochralski Silicon

MRS Proceedings ◽

10.1557/proc-59-195 ◽

1985 ◽

Vol 59 ◽

Cited By ~ 19

Author(s):

T. Y. Tan ◽

R. Kleinhenz ◽

C. P. Schneider

Keyword(s):

Oxygen Concentration ◽

Kinetic Models ◽

The Other ◽

Concentration Data ◽

Czochralski Silicon ◽

Thermal Donor ◽

Donor Formation ◽

Small Clusters ◽

Kinetics Of ◽

Overall Kinetics

ABSTRACTWe report the results of an experiment of annealing Czochralski silicon at 450°C for up to 500 hrs. Concentrations of oxygen atoms (Ci) and thermal donors (TD) have both been monitored. Analyses of the oxygen concentration data yielded the apparent interpretation that the overall kinetics is dominated by the formation of small clusters (dimers and trimers). This cannot account for TD formation, since they are supposed to be larger clusters. On the other hand, analyses of existing TD kinetic models did not yield calculated Ci values to satisfactorily account for the present Ci data. We believe that a satisfactory TD model is not yet available.

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Measurements of Enhanced Oxygen Diffusion in Silicon During Thermal Donor Formation: New Evidence for Possible Mechanisms

MRS Proceedings ◽

10.1557/proc-163-555 ◽

1989 ◽

Vol 163 ◽

Cited By ~ 11

Author(s):

A.R. Brown ◽

R. Murray ◽

R.C. Newman ◽

J.H. Tucker

Keyword(s):

Oxygen Diffusion ◽

Diffusion Rate ◽

Oxygen Loss ◽

Enhanced Diffusion ◽

Czochralski Silicon ◽

Thermal Donor ◽

Annealed Material ◽

Primary Mechanism ◽

Donor Formation ◽

New Evidence

AbstractCzochralski silicon has been heated in a H-plasma at temperatures in the range 300-450°C, and compared with furnace annealed material. Plasma treatments produce enhanced rates of oxygen diffusion jumps, loss of oxygen from solution and formation of thermal donor centres. The available evidence indicates that atomic hydrogen catalyses the enhancements via the oxygen diffusion rate. Donor concentrations greater than 1017cm-3 have been observed in samples heated in a plasma at 350°C. Doubts have been raised about dimer formation being the primary mechanism for oxygen loss in furnace anneals at 350°C, but invoking enhanced diffusion leads to a conflict with stress dichroism data.

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Formation Kinetics of Thermal Donors in Silicon

MRS Proceedings ◽

10.1557/proc-59-173 ◽

1985 ◽

Vol 59 ◽

Cited By ~ 1

Author(s):

Jeffrey T. Borenstein ◽

David Peak ◽

James W. Corbett

Keyword(s):

Electronic Absorption Spectra ◽

Reaction Rates ◽

Active Species ◽

Czochralski Silicon ◽

Thermal Donor ◽

Formation Kinetics ◽

Initial Oxygen ◽

Donor Formation ◽

Kinetics Of ◽

Donor Species

ABSTRACTThe kinetics of thermal donor formation in Czochralski-silicon at ca. 450° C are explained by a simple model based on the work of Suezawa and Sumino which derives forward and reverse reaction rates for each electrically active species from the general features of the infrared electronic absorption spectra. The model, which is independent of the chemical nature of the thermal donor core, assumes that all thermal donors beyond the first donor species are chemically stable at the donor formation temperature, and approximates the reactions for species smaller than the first thermal donor as being in chemical equilibrium. The model is shown to be consistent with both sets of the available IR spectra of thermal donors (Oeder-Wagner and Suezawa-Sumino) when differences in the annealing temperature and initial oxygen concentration are taken into account.

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