thermal donor
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2020 ◽  
pp. 2000587
Author(s):  
Rabin Basnet ◽  
Hang Sio ◽  
Manjula Siriwardhana ◽  
Fiacre E. Rougieux ◽  
Daniel Macdonald


AIP Advances ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 045019 ◽  
Author(s):  
Kazuhisa Torigoe ◽  
Toshiaki Ono


2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Fiacre E. Rougieux ◽  
Wolfram Kwapil ◽  
Friedemann Heinz ◽  
Manjula Siriwardhana ◽  
Martin C. Schubert

Abstract In this paper we present a contactless transient carrier spectroscopy and imaging technique for traps in silicon. At each pixel, we fit the transient decay of the trap emission which allows us to obtain both the trap time constant and trap concentration. Here we show that this technique allows for high-resolution images. Furthermore, this technique also allows to discriminate between the presence of thermal donors or oxygen precipitates in as-grown wafers, without requiring a thermal donor killing step.





2014 ◽  
Vol 131 ◽  
pp. 117-123 ◽  
Author(s):  
T. Niewelt ◽  
S. Lim ◽  
J. Holtkamp ◽  
J. Schön ◽  
W. Warta ◽  
...  


2014 ◽  
Vol 11 (11-12) ◽  
pp. 1574-1577
Author(s):  
S. Iacovo ◽  
A. Stesmans ◽  
S. Nguyen ◽  
V. V. Afanas'ev


2014 ◽  
Vol 29 (9) ◽  
pp. 095008
Author(s):  
A Stesmans ◽  
S Iacovo ◽  
S Nguyen ◽  
V V Afanas’ev ◽  
M R Baklanov ◽  
...  


2014 ◽  
Vol 61 (5) ◽  
pp. 1241-1245 ◽  
Author(s):  
Florent Tanay ◽  
Sebastien Dubois ◽  
Jordi Veirman ◽  
Nicolas Enjalbert ◽  
Julie Stendera ◽  
...  


2014 ◽  
Vol 55 ◽  
pp. 533-538 ◽  
Author(s):  
Frédéric Jay ◽  
Jordi Veirman ◽  
Nora Najid ◽  
Delfina Muñoz ◽  
Sébastien Dubois ◽  
...  


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