donor formation
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Ring‐Like Defect Formation in N‐Type Czochralski‐Grown Silicon Wafers during Thermal Donor Formation

2020 ◽  
pp. 2000587
Author(s):  
Rabin Basnet ◽  
Hang Sio ◽  
Manjula Siriwardhana ◽  
Fiacre E. Rougieux ◽  
Daniel Macdonald
Keyword(s):  
Defect Formation ◽  
Silicon Wafers ◽  
Thermal Donor ◽  
Donor Formation

Hydrogen-Related Donor Formation: Fabrication Techniques, Characterization, and Application to High-voltage Superjunction Transistors

2019 ◽  
Vol 3 (4) ◽  
pp. 135-146 ◽  
Author(s):  
Hans-Joachim Schulze ◽  
Marco Buzzo ◽  
Franz-Josef Niedernostheide ◽  
Michael Rueb ◽  
Holger Schulze ◽  
...  
Keyword(s):  
High Voltage ◽  
Donor Formation ◽  
Related Donor

Tailoring of field-stop layers in power devices by hydrogen-related donor formation

2016 ◽  
Author(s):  
F.-J. Niedernostheide ◽  
H.-J. Schulze ◽  
H. P. Felsl ◽  
F. Hille ◽  
J. G. Laven ◽  
...  
Keyword(s):  
Power Devices ◽  
Donor Formation ◽  
Related Donor

Oxygen-Related Thermal Donor Formation in Dopant-Rich Compensated Czochralski Silicon

2014 ◽  
Vol 61 (5) ◽  
pp. 1241-1245 ◽  
Author(s):  
Florent Tanay ◽  
Sebastien Dubois ◽  
Jordi Veirman ◽  
Nicolas Enjalbert ◽  
Julie Stendera ◽  
...  
Keyword(s):  
Czochralski Silicon ◽  
Thermal Donor ◽  
Donor Formation

Diode Characteristics and Thermal Donor Formation in Germanium-Doped Silicon Substrates

2013 ◽  
Vol 50 (5) ◽  
pp. 177-186 ◽  
Author(s):  
J. M. Rafi ◽  
J. Vanhellemont ◽  
E. Simoen ◽  
J. Chen ◽  
M. Zabala ◽  
...  
Keyword(s):  
Silicon Substrates ◽  
Thermal Donor ◽  
Doped Silicon ◽  
Donor Formation

Interstitial oxygen behavior for thermal double donor formation in germanium: Infrared absorption studies

2013 ◽  
Vol 113 (7) ◽  
pp. 073501 ◽  
Author(s):  
K. Inoue ◽  
T. Taishi ◽  
Y. Tokumoto ◽  
Y. Murao ◽  
K. Kutsukake ◽  
...  
Keyword(s):  
Infrared Absorption ◽  
Interstitial Oxygen ◽  
Absorption Studies ◽  
Donor Formation

Carrier Lifetime Studies in Diode Structures on Si Substrates with and without Ge Doping

2011 ◽  
Vol 178-179 ◽  
pp. 347-352 ◽  
Author(s):  
Aurimas Uleckas ◽  
Eugenijus Gaubas ◽  
Joan Marc Rafi ◽  
Jiahe Chen ◽  
De Ren Yang ◽  
...  
Keyword(s):  
Doping Concentration ◽  
Carrier Lifetime ◽  
Isothermal Annealing ◽  
Defect Formation ◽  
Si Substrates ◽  
Thermal Donor ◽  
Donor Formation ◽  
Radiation Treatments ◽  
Lifetime Studies ◽  
Ge Doping

Results are presented of a comparative study of diodes processed on n-type Cz grown Si substrates without and with Ge doping concentration of about 1019 cm-3 and 1020 cm-3. In order to investigate thermal donor formation, isothermal annealing at 450°C for 0.5 – 5 h was carried out. As processed diodes were also irradiated with 2 MeV electrons with fluences in the range between 1014 and 1017 e/cm2 to investigate the Ge doping influence on irradiation induced defect formation. Diodes after thermal and radiation treatments have been investigated by combining different techniques.

scholarly journals Impact of silicon substrate germanium doping on diode characteristics and on thermal donor formation

2009 ◽  
Vol 404 (23-24) ◽  
pp. 4723-4726 ◽  
Author(s):  
J.M. Rafí ◽  
J. Vanhellemont ◽  
E. Simoen ◽  
J. Chen ◽  
M. Zabala ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Thermal Donor ◽  
Donor Formation

Thermal donor formation in CZ-silicon with reference to dimers, trimers and V–O interaction

2009 ◽  
Vol 404 (8-11) ◽  
pp. 1070-1073 ◽  
Author(s):  
Shyam Singh ◽  
Rajeev Singh ◽  
B.C. Yadav
Keyword(s):  
Thermal Donor ◽  
Donor Formation
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