High-Speed Switching of Double-Barrier Resonant-Tunneling Light-Emitting Diodes Investigated by Picosecond Electroluminescence Measurements

1998 ◽  
Vol 297-298 ◽  
pp. 29-32 ◽  
Author(s):  
I. Romandić ◽  
N. Žurauskienė ◽  
E. Goovaerts ◽  
C. Van Hoof ◽  
G. Borghs
Keyword(s):  
Resonant Tunneling ◽  
High Speed ◽  
Light Emitting Diodes ◽  
Double Barrier ◽  
Light Emitting ◽  
High Speed Switching ◽  
Double Barrier Resonant Tunneling

Transparent organic light-emitting diodes using resonant tunneling double barrier structures

2007 ◽  
Vol 91 (9) ◽  
pp. 093515 ◽  
Author(s):  
Seung Yoon Ryu ◽  
Sung Jin Jo ◽  
Chang Su Kim ◽  
Sang Hun Choi ◽  
Joo Hyon Noh ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Double Barrier ◽  
Light Emitting ◽  
Organic Light

Simulation of GaAs/AlxGa1-xAs/InyGa1-y As Double-Barrier Resonant Tunneling Structures

2011 ◽  
Vol 399-401 ◽  
pp. 1093-1096
Author(s):  
Yuan Ming Zhou
Keyword(s):  
Transmission Coefficient ◽  
Current Density ◽  
Resonant Tunneling ◽  
Indium Content ◽  
Rapid Decrease ◽  
Supply Function ◽  
Double Barrier ◽  
Resonant Condition ◽  
Zero Bias ◽  
Double Barrier Resonant Tunneling

We study the resonant tunneling in symmetric GaAs/AlxGa1-xAs/InyGa1-yAs double-barrier resonant-tunneling structures. Effects of three factors on the resonant tunneling are simulated and discussed. On increasing the barrier height, the decrease of current density is attributed to the interplay between the increase of the supply function of available electrons and the rapid decrease of the transmission coefficient through the device area, and the lowest Indium content for realizing the zero-bias resonant tunneling increases. With the increase of the barrier (well) width, the decrease of the current density can be explained by the fact that both the supply function and the transmission coefficient decreases, and the lowest Indium content meeting the zero-bias resonant condition decreases.

Magnetic-field-induced modulation of intersubband scattering in a double-barrier resonant-tunneling structure

1996 ◽  
Vol 53 (20) ◽  
pp. 13651-13655 ◽  
Author(s):  
P. D. Buckle ◽  
J. W. Cockburn ◽  
M. S. Skolnick ◽  
R. Grey ◽  
G. Hill ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Resonant Tunneling ◽  
Double Barrier ◽  
Double Barrier Resonant Tunneling ◽  
Resonant Tunneling Structure
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