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Compound Semiconductors 2001
Latest Publications
TOTAL DOCUMENTS
112
(FIVE YEARS 0)
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0
(FIVE YEARS 0)
Published By CRC Press
9780429181191
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Latest Documents
Most Cited Documents
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Recent developments in selective area growth and epitaxial lateral overgrowth of Ill-nitrides
Compound Semiconductors 2001
◽
10.1201/9781482268980-98
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2002
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pp. 725-738
Keyword(s):
Epitaxial Lateral Overgrowth
◽
Selective Area Growth
◽
Lateral Overgrowth
◽
Selective Area
◽
Area Growth
◽
Recent Developments
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Optimization of GaAs/Si Heteroepitaxy for Solar Cell Application
Compound Semiconductors 2001
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10.1201/9781482268980-97
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2002
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pp. 719-724
Keyword(s):
Solar Cell
◽
Solar Cell Application
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Study on mechanism of re-entrant RHEED oscillation observed during LT-MBE growth of GaAs
Compound Semiconductors 2001
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10.1201/9781482268980-91
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2002
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pp. 685-690
Keyword(s):
Mbe Growth
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Elastic Properties and Pressure-induced Phase Transitions of BNs
Compound Semiconductors 2001
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10.1201/9781482268980-86
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2002
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pp. 649-660
Keyword(s):
Phase Transitions
◽
Elastic Properties
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Application of the GW method to the semiconducting materials M Oshikiri and F Aryasetiawan
Compound Semiconductors 2001
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10.1201/9781482268980-85
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2002
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pp. 643-648
Keyword(s):
Semiconducting Materials
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Electro-optical effects in single and multi-stacked dots A Vasanelli, R Ferreira, R Cingolani, H Sakaki and G Bastard
Compound Semiconductors 2001
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10.1201/9781482268980-78
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2002
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pp. 581-586
Keyword(s):
Optical Effects
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Biexciton formation in CdTe/Cdo.74Mgo.26Te quantum wires
Compound Semiconductors 2001
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10.1201/9781482268980-75
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2002
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pp. 551-556
Keyword(s):
Quantum Wires
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Persistent Photoconductivity under Atmospheric Pressure in Uniformly Doped «-GaAs Prepared by Intermittent Injection of TMG and AsH3
Compound Semiconductors 2001
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10.1201/9781482268980-68
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2002
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pp. 487-492
Keyword(s):
Atmospheric Pressure
◽
Persistent Photoconductivity
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Spatiotemporal Imaging of Nonequilibrium Current During Impact Ionization Avalanche in n-GaAs
Compound Semiconductors 2001
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10.1201/9781482268980-65
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2002
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pp. 463-474
Keyword(s):
Impact Ionization
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Ultrafast and Large Nonlinear Optical Response due to Spatial Structure of Internal Electric Field in Semiconductor Thin Film
Compound Semiconductors 2001
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10.1201/9781482268980-61
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2002
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pp. 433-438
Keyword(s):
Thin Film
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Electric Field
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Spatial Structure
◽
Nonlinear Optical
◽
Optical Response
◽
Nonlinear Optical Response
◽
Internal Electric Field
◽
Semiconductor Thin Film
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