Metastable Precipitates and their Misfit Strains in a Cu-0.9wt%Be Single Crystal

2007 ◽  
Vol 561-565 ◽  
pp. 2297-2300 ◽  
Author(s):  
Ryoichi Monzen ◽  
Toshiro Sakai ◽  
Chihiro Watanabe
Keyword(s):  
Electron Microscopy ◽  
Phase Transformation ◽  
High Resolution ◽  
Single Crystal ◽  
High Resolution Electron Microscopy ◽  
Length Change ◽  
Misfit Dislocations ◽  
Absolute Value ◽  
Resolution Electron ◽  
The Matrix

The precipitation processes from G.P. zones to γ’ in a Cu−0.9wt%Be alloy single crystal containing only the G.P. zones parallel to the matrix (001)α plane are investigated by high-resolution electron microscopy. The precipitate phases follow a G.P. zone → γ” → γI + γ’ sequence. The G.P. zone to γI phase transformation occurs successively via γ” during aging, while the γ’ phase heterogeneously precipitates on the γI phase. From length-change measurements during aging, the misfit strains of γ’ precipitates in directions perpendicular and parallel to [001]α are estimated as ε11 =ε22 = −0.03 and ε33 = −0.09, respectively. The observation that the estimated absolute value of ε33 is much smaller than that of ε33 = −0.25 calculated using lattice parameters of the γ’ phase and Cu matrix is understood in terms of the relaxation of ε33 by interfacial misfit dislocations.

HIGH RESOLUTION ELECTRON MICROSCOPE STUDY OF CdTe-Cd0.6Mn0.4 Te SUPERLATTICES

1985 ◽  
Vol 56 ◽  
Author(s):  
C. CHOI ◽  
N. OTSUKA ◽  
L. A. KOLODZIEJSKI ◽  
R. L. GUNSHOR-a
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Phase Contrast ◽  
Electron Microscope Study ◽  
Lattice Mismatch ◽  
Thick Layer ◽  
High Resolution Electron Microscopy ◽  
Misfit Dislocations ◽  
Resolution Electron ◽  
High Resolution Electron Microscope

AbstractStructures of CdTe-Cd0.6Mn0.4Te superlattices which are caused by the lattice mismatch between suterlattice layers have been studied by high resolution electron microscopy (HREM). In thin-layer superlattices, the crystal lattice in each layeris elastically distorted, resulting in the change of the crystal symmetry from cubic to rhombohedral. The presence of the small rhombohedral distrotion has been confirmed through a phase contrast effect in HREM images. In a thick-layer superlattice, the lattice mismatch is accommodated by dissociated misfit dislocations. Burgers vectors of partial misfit dislocations have been identified from the shift of lattice fringes in HREM images.

High-resolution electron microscopy of epitaxial YBCO/Y2O3/YSZ on Si(001)

1993 ◽  
Vol 8 (9) ◽  
pp. 2112-2127 ◽  
Author(s):  
A. Bardal ◽  
O. Eibl ◽  
Th. Matthée ◽  
G. Friedl ◽  
J. Wecker
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Thick Layer ◽  
Atomic Layer ◽  
High Resolution Electron Microscopy ◽  
Stacking Fault ◽  
Buffer Layers ◽  
Misfit Dislocations ◽  
Resolution Electron ◽  
Unit Cells

The microstructures of YBa2Cu3O7−δ (YBCO) thin films grown on Si with Y-stabilized ZrO2 (YSZ) and Y2O3 buffer layers were characterized by means of high-resolution electron microscopy. At the Si–YSZ interface, a 2.5 nm thick layer of regrown amorphous SiOx is present. The layer is interrupted by crystalline regions, typically 5 to 10 nm wide and 10 to 50 nm apart. Close to the crystalline regions, {111} defects are present in the Si substrate. The typical defect observed is an extrinsic stacking fault plus a perfect dislocation close to the stacking fault which terminates extra {111} planes in the upper part of the Si. These defects are probably formed by condensation of Si self-interstitials created during oxide regrowth. Precipitates are present in the Si close to the Si–YSZ interface and indicate that in-diffusion of Zr has occurred. The YSZ–Y2O3 interface is atomically sharp and essentially planar and contains no second phases. Perfect misfit dislocations with Burgers vector 1/2〈110〉 are present at this interface along with unrelaxed elastic misfit stresses. The Y2O3–YBCO interface is atomically sharp and planar, but contains steps. (001) stacking faults are present in the YBCO above these steps; the faults are, however, healed a few unit cells away from the interface. By HREM analysis of ultrathin specimen areas, the atomic layer of the YBCO closest to the Y2O3 was found to be a barium-oxygen layer.

High resolution electron microscopy of misfit dislocations in the GaAs/Si epitaxial interface

1986 ◽  
Vol 49 (5) ◽  
pp. 277-279 ◽  
Author(s):  
N. Otsuka ◽  
C. Choi ◽  
Y. Nakamura ◽  
S. Nagakura ◽  
R. Fischer ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Misfit Dislocations ◽  
Resolution Electron ◽  
Epitaxial Interface

Electron Microscopy of Stress-Induced Martensite and Pretransition Microstructures in Ni62.5Al37.5

1991 ◽  
Vol 246 ◽  
Author(s):  
D. Schryvers ◽  
L.E. Tanner
Keyword(s):  
Electron Microscopy ◽  
Stress Intensity ◽  
High Resolution ◽  
Single Crystal ◽  
High Stress ◽  
High Resolution Electron Microscopy ◽  
Transverse Displacement ◽  
Transition Sequence ◽  
Resolution Electron ◽  
Defect Sites

AbstractStatic configurations of stress-induced martensite and pretransition microstructures in Ni62.5A137.5 have been studied with conventional as well as high resolution electron microscopy using single crystal TEM specimens containing defect sites of extremely high stress intensity. From images of different regions around such defects it can be concluded that the austenite lattice develops transverse displacement modulations with increasing amplitude and correlation directly related to the {110}<110> shear-plus-shuffle displacements required to form the martensite structures. Different steps in this transition sequence are presented and discussed.

Transmission electron microscopy study of Co/Pd and Co/Au multilayers

1993 ◽  
Vol 8 (5) ◽  
pp. 1019-1027 ◽  
Author(s):  
F. Hakkens ◽  
A. De Veirman ◽  
W. Coene ◽  
Broeder F.J.A. den
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Microscopy Study ◽  
Columnar Structure ◽  
Electron Microscopy Study ◽  
Misfit Dislocations ◽  
Transmission Electron ◽  
Resolution Electron

The structure of Co/Pd and Co/Au (111) multilayers is studied using transmission electron microscopy and high resolution electron microscopy. We focused on microstructure, atomic stacking (especially at the interfaces), and coherency, as these are structural properties that have considerable magnetic effects. A columnar structure with a strong curvature of the multilayer influenced by substrate temperature during growth is observed. High resolution imaging shows numerous steps at the interfaces of the multilayer structure and the presence of misfit dislocations. In bright-field images, periodic contrast fringes are observed at these interfaces as the result of moiré interference. These moiré fringes are used to study the misfit relaxation at the interfaces, whereas electron diffraction gives the average relaxation over the whole layer. Both measurements determined that, for Co/Pd as well as Co/Au multilayers, 80–85% of the misfit is relaxed and 20–15% remains in the form of strain, independent of the Co layer thickness in the regime studied.

Sign in / Sign up

Export Citation Format

Share Document