Transient Response to High Energy Heavy Ions in 6H-SiC n+p Diodes
2008 ◽
Vol 600-603
◽
pp. 1039-1042
Keyword(s):
Transient currents in 6H-SiC n+p diodes and those in Si PIN diodes are compared, and the carrier dynamic response to a heavy ion collision is analyzed using Technology Computer Aided Design (TCAD). In case of 6H-SiC n+p diodes, it is found that the contribution of the ambipolar-diffusion current to total transient current is extremely weak compared to that in Si PIN diodes, since plasma disruption is accelerated by the Auger recombination process in the former.
2007 ◽
Vol 16
(10)
◽
pp. 3355-3362
Keyword(s):
2000 ◽
Vol 572
(1-2)
◽
pp. 227-240
◽