Fabrication and Properties of Large-Area Silicon Nanowire Arrays

2009 ◽  
Vol 610-613 ◽  
pp. 604-609
Author(s):  
Hui Fang ◽  
Yin Wu ◽  
Jing Zhu
Keyword(s):  
Silicon Nanowire ◽  
Optical Devices ◽  
Nanowire Arrays ◽  
Photoluminescence Spectra ◽  
Large Area ◽  
Silicon Nanowire Arrays ◽  
Potential Applications ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
20 Nm

Wet chemical etching with dry metal deposition method has been developed to fabricate large-area aligned silicon nanowire (SiNW) arrays. The combination of nanoclusters Ag film with proper interconnection and interspaces (of about 20 nm thick), and proper temperature during etching (from 20 to 80 °C) is vital to successfully fabricating large-area uniform SiNW arrays. Raman and photoluminescence spectra of the SiNW arrays indicated their potential applications in chemical detection and optical devices ,respectively.

Fabrication of Large-Area Silicon Nanowire Arrays Based on Electroless Metal Deposition

2011 ◽  
Vol 194-196 ◽  
pp. 598-601
Author(s):  
Xuan Liu ◽  
Li Jie Zhao ◽  
Ping Feng
Keyword(s):  
Reaction Time ◽  
Silicon Nanowires ◽  
Silicon Nanowire ◽  
Metal Deposition ◽  
Wire Diameter ◽  
Nanowire Arrays ◽  
Metal Particles ◽  
Large Area ◽  
Average Growth ◽  
Silicon Nanowire Arrays

Electroless metal deposition is a simple, low-cost and effective method for fabricating silicon nanowire arrays and has been used widely in micro electromechanical industry. In this paper, large-area silicon nanowire arrays are prepared successfully with mixed AgNO3and HF solution by this method at normal temperature and pressure. It has been proved the best equality of silicon nanowires can be obtained at the concentration ratio of 0.02 mol/l: 5mol/l for AgNO3and HF and 1h reaction time. The influence of nano metal particles on the growth, the wire diameter, the distribution and the array of silicon nanowires are analyzed. Experimental results show the distribution and wire diameter of silicon nanowires can be controlled effectively by nano metal particles deposited on silicon wafers. The length of silicon nanowires increases with the reaction time and the average growth velocity is predicted to be 0.5～0.7μm/min. The equality of silicon nanowires with nano Au particles is better than those with nano Pt particles. The reaction mechanism of preparing large-area silicon nanowire arrays is analyzed as the result of the deoxidization of silver ion and the removal of the oxidized silicon solution by reacting with HF.

scholarly journals Large area uniform deposition of silver nanoparticles through bio-inspired polydopamine coating on silicon nanowire arrays for practical SERS applications

2014 ◽  
Vol 2 (30) ◽  
pp. 4894-4900 ◽  
Author(s):  
Merve Selen Akin ◽  
Mehmet Yilmaz ◽  
Esra Babur ◽  
Betul Ozdemir ◽  
Hakan Erdogan ◽  
...  
Keyword(s):  
Silver Nanoparticles ◽  
Silicon Nanowire ◽  
Nanowire Arrays ◽  
Large Area ◽  
Silicon Nanowire Arrays ◽  
Uniform Deposition

Bio-inspired polydopamine coating has been demonstrated to control the size and density of silver nanoparticles on 3-D SiNW arrays for practical SERS applications.

Large area fabrication of vertical silicon nanowire arrays by silver-assisted single-step chemical etching and their formation kinetics

2014 ◽  
Vol 25 (17) ◽  
pp. 175601 ◽  
Author(s):  
Sanjay K Srivastava ◽  
Dinesh Kumar ◽  
S W Schmitt ◽  
K N Sood ◽  
S H Christiansen ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Silicon Nanowire ◽  
Single Step ◽  
Nanowire Arrays ◽  
Large Area ◽  
Silicon Nanowire Arrays ◽  
Formation Kinetics

Preparation and Characterization of Silicon Nanowire Arrays for Solar Cell

2010 ◽  
Vol 663-665 ◽  
pp. 840-843
Author(s):  
Wen Bin Yang ◽  
Jun Wun ◽  
Ming Wei ◽  
Chao Wang ◽  
Chang Qiong Xie
Keyword(s):  
Solar Cell ◽  
Room Temperature ◽  
Silicon Nanowire ◽  
Absorption Capacity ◽  
Nanowire Arrays ◽  
Large Area ◽  
Silicon Nanowire Arrays ◽  
System Solution ◽  
Scanning Electron

Large-area silicon nanowire arrays (SiNWs) were prepared by etching silicon substrate in HF/AgNO3 system solution at near room temperature. Morphology of SiNWs was characterized by scanning electron microscopy. The results showed that morphology of SiNWs could be influenced by solution ratio, temperature and reaction time in the hydrothermal system. The length of SiNWs was about 30-40 μm, and the diameter of SiNWs was in the range of 100-300 nm. SiNWs owned strong optical absorption capacity and could be used for application in solar cell.

High thermoelectric figure-of-merits from large-area porous silicon nanowire arrays

Nano Energy ◽  
2015 ◽  
Vol 13 ◽  
pp. 433-441 ◽  
Author(s):  
Ting Zhang ◽  
Shaolong Wu ◽  
Ju Xu ◽  
Ruiting Zheng ◽  
Guoan Cheng
Keyword(s):  
Porous Silicon ◽  
Silicon Nanowire ◽  
Nanowire Arrays ◽  
Large Area ◽  
Thermoelectric Figure ◽  
Silicon Nanowire Arrays ◽  
Porous Silicon Nanowire
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